Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. unit : mm 2085A [2SJ608] 4.5 1.9 10.5 1.2 2.6 1.4 1.0 8.5 • Package Dimensions 7.5 1.2 1.6 0.5 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 2.5 2.5 SANYO : FLP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --4 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% V --16 A 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions Ratings min typ ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 --30 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A --1.0 2.9 Unit max V --1 µA ±10 µA --2.4 V 4.2 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-2989 No.6995-1/4 2SJ608 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on) 1 RDS(on) 2 ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V Input Capacitance RDS(on) 3 Ciss ID=--1A, VGS=--4V VDS=--10V, f=1MHz 560 pF Output Capacitance Coss VDS=--10V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr td(off) See specified Test Circuit 4 ns See specified Test Circuit 70 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max 60 78 90 126 mΩ mΩ 100 140 mΩ tf Qg See specified Test Circuit 55 ns VDS=--10V, VGS=--10V, ID=--4A 12 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2 Diode Forward Voltage VSD IS=--4A, VGS=0 Total Gate Charge nC --0.88 --1.5 V VDD= --15V Switching Time Test Circuit VIN 0V --10V ID= --2A RL=7.5Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 2SJ608 50Ω S VDS= --10V V .5 --3 25 V --3.0 --3 --2.5V C Ta= --25 ° --6 --5 --4 --3 --2 °C --1 25 --1 VGS= --2.0V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT02844 RDS(on) -- VGS 200 75°C --7 --4 --2 °C --8 Ta =7 5°C --2 5°C --4 .0V --6 .0V --10 ID -- VGS --9 Drain Current, ID -- A Drain Current, ID -- A --5 .5V --4 .0 V ID -- VDS --6 --4.0 IT02845 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 150 --2.0A 100 ID= --1.0A 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT02846 150 4.0V V = -4.5 S = -VG , S A , VG --1.0 0A I D= --1. = ID V --10.0 = S V G , A 2.0 I D= -- 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02847 No.6995-2/4 VDS= --10V 3 2 10 7 5 °C Ta= --25 25° C 1.0 7 5 75° C 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02848 tf 3 2 td(on) 10 7 5 --0.8 --1.0 --1.2 IT02849 Ciss 5 3 2 Coss Crss 100 7 5 3 tr 3 2 --0.6 f=1MHz 7 3 2 td(off) --0.4 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V 100 7 5 --0.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0 SW Time -- ID 1000 7 5 2 10 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 --10 3 2 VDS= --10V ID= --4A --10 7 5 Drain Current, ID -- A --10 --8 --6 --4 --2 0 2 4 6 8 10 Total Gate Charge, Qg -- nC 12 14 IT02852 PD -- Ta 2.0 --10 --15 --20 <10µs 10 1m 0µs s 1 10 0ms 0m s ID= --4A DC --1.0 7 5 3 2 --0.1 7 5 IT02851 ASO IDP= --16A 3 2 3 2 0 --5 Drain-to-Source Voltage, VDS -- V IT02850 VGS -- Qg --12 Gate-to-Source Voltage, VGS -- V --0.1 7 5 3 2 --0.001 2 Drain Current, ID -- A Allowable Power Dissipation, PD -- W --1.0 7 5 3 2 --0.01 7 5 3 2 3 2 0.1 --0.01 VGS=0 Ta= 75°C 25°C 3 2 IF -- VSD --10 7 5 3 2 --25°C yfs -- ID 100 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 2SJ608 op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT03270 1.5 1.4 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03271 No.6995-3/4