SANYO 2SJ608

Ordering number : ENN6995
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Features
•
•
•
•
Low ON-resistance.
Ultrahigh speed switching.
Low-voltage drive.
Mounting height 9.5mm.
Meets radial taping.
unit : mm
2085A
[2SJ608]
4.5
1.9
10.5
1.2
2.6
1.4
1.0
8.5
•
Package Dimensions
7.5
1.2
1.6
0.5
0.5
1
2
3
1 : Source
2 : Drain
3 : Gate
Specifications
2.5
2.5
SANYO : FLP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
Gate-to-Source Voltage
VGSS
±20
V
--4
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
V
--16
A
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
Ratings
min
typ
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
--30
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
--1.0
2.9
Unit
max
V
--1
µA
±10
µA
--2.4
V
4.2
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2989 No.6995-1/4
2SJ608
Continued from preceding page.
Ratings
Parameter
Symbol
Static Drain-to-Source On-State Resistance
RDS(on) 1
RDS(on) 2
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
Input Capacitance
RDS(on) 3
Ciss
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
560
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
95
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
td(off)
See specified Test Circuit
4
ns
See specified Test Circuit
70
ns
Turn-OFF Delay Time
Fall Time
Conditions
min
typ
Unit
max
60
78
90
126
mΩ
mΩ
100
140
mΩ
tf
Qg
See specified Test Circuit
55
ns
VDS=--10V, VGS=--10V, ID=--4A
12
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--4A
2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--4A
2
Diode Forward Voltage
VSD
IS=--4A, VGS=0
Total Gate Charge
nC
--0.88
--1.5
V
VDD= --15V
Switching Time Test Circuit
VIN
0V
--10V
ID= --2A
RL=7.5Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
P.G
2SJ608
50Ω
S
VDS= --10V
V
.5
--3
25
V
--3.0
--3
--2.5V
C
Ta=
--25
°
--6
--5
--4
--3
--2
°C
--1
25
--1
VGS= --2.0V
0
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
IT02844
RDS(on) -- VGS
200
75°C
--7
--4
--2
°C
--8
Ta
=7
5°C
--2
5°C
--4
.0V
--6
.0V
--10
ID -- VGS
--9
Drain Current, ID -- A
Drain Current, ID -- A
--5
.5V
--4
.0
V
ID -- VDS
--6
--4.0
IT02845
RDS(on) -- Ta
200
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
150
--2.0A
100
ID= --1.0A
50
0
0
--2
--4
--6
--8
--10
--12
--14
--16
Gate-to-Source Voltage, VGS -- V
--18
--20
IT02846
150
4.0V
V
= -4.5
S
= -VG
,
S
A
, VG
--1.0
0A
I D=
--1.
=
ID
V
--10.0
=
S
V
G
,
A
2.0
I D= --
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT02847
No.6995-2/4
VDS= --10V
3
2
10
7
5
°C
Ta=
--25
25°
C
1.0
7
5
75°
C
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT02848
tf
3
2
td(on)
10
7
5
--0.8
--1.0
--1.2
IT02849
Ciss
5
3
2
Coss
Crss
100
7
5
3
tr
3
2
--0.6
f=1MHz
7
3
2
td(off)
--0.4
Ciss, Coss, Crss -- VDS
1000
VDD= --15V
VGS= --10V
100
7
5
--0.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
0
SW Time -- ID
1000
7
5
2
10
1.0
--0.1
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
7
0
--10
3
2
VDS= --10V
ID= --4A
--10
7
5
Drain Current, ID -- A
--10
--8
--6
--4
--2
0
2
4
6
8
10
Total Gate Charge, Qg -- nC
12
14
IT02852
PD -- Ta
2.0
--10
--15
--20
<10µs
10
1m 0µs
s
1
10 0ms
0m
s
ID= --4A
DC
--1.0
7
5
3
2
--0.1
7
5
IT02851
ASO
IDP= --16A
3
2
3
2
0
--5
Drain-to-Source Voltage, VDS -- V
IT02850
VGS -- Qg
--12
Gate-to-Source Voltage, VGS -- V
--0.1
7
5
3
2
--0.001
2
Drain Current, ID -- A
Allowable Power Dissipation, PD -- W
--1.0
7
5
3
2
--0.01
7
5
3
2
3
2
0.1
--0.01
VGS=0
Ta=
75°C
25°C
3
2
IF -- VSD
--10
7
5
3
2
--25°C
yfs -- ID
100
7
5
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
2SJ608
op
era
tio
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT03270
1.5
1.4
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT03271
No.6995-3/4