VEC2602 Ordering number : ENN8021 N-Channel Silicon MOSFET VEC2602 General-Purpose Switching Device Applications Features • • • • Best suited for inverter applications. The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V 4 --3 A 16 --12 Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 Mounted on a ceramic board (900mm2✕0.8mm) A W 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance ID=1mA, VGS=0 VDS=30V, VGS=0 30 VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.0 VDS=10V, ID=2A 2.2 V 1 µA ±10 µA 2.4 3.6 V S RDS(on)1 RDS(on)2 ID=2A, VGS=10V ID=1A, VGS=4V Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 370 Output Capacitance 85 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 47 pF Static Drain-to-Source On-State Resistance Marking : BE 37 48 mΩ 70 99 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1004PE TS IM TB-00000135 No.8021-1/6 VEC2602 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 28 ns See specified Test Circuit. 37 ns tf See specified Test Circuit. 34 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 8.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.3 Diode Forward Voltage VSD IS=4A, VGS=0 0.83 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 VDS=--30V, VGS=0 --30 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0 VDS=--10V, ID=--1mA --1.0 yfs RDS(on)1 VDS=--10V, ID=--1.5A 2.0 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 Ciss Input Capacitance V --2.4 3.4 ID=--1.5A, VGS=--10V ID=--0.7A, VGS=--4V V S 65 86 mΩ 117 168 mΩ Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 510 Output Capacitance 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 17 ns See specified Test Circuit. 53 ns tf See specified Test Circuit. 35 ns Turn-OFF Delay Time Fall Time pF Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 11 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A Diode Forward Voltage VSD IS=--3A, VGS=0 0.3 8 7 8 7 6 2 3 V 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 6 5 4 0.65 1 0.75 2.9 0.07 1 nC --1.2 Electrical Connection 2.3 0.25 2.8 0.25 Package Dimensions unit : mm 2227A 1.7 --0.87 2 3 4 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 No.8021-2/6 VEC2602 Switching Time Test Circuit [N-channel] [P-channel] 0V --10V ID=2A RL=7.5Ω VOUT VIN D PW=10µs D.C.≤1% VDD= --15V VIN VDD=15V VIN 10V 0V D PW=10µs D.C.≤1% G G 4V 5V 6V ID -- VDS --3.5 3.0 2.0 --3.0 --10 V Drain Current, ID -- A 10V 4.0 S --4.0 8V 5.0 [Nch] VEC2602 50Ω --2.5 [Pch] --5 .0 0V --4. V 0V ID -- VDS 6.0 Drain Current, ID -- A P.G S --8 .0V 50Ω --6 . VEC2602 P.G ID= --1.5A RL=10Ω VOUT VIN VGS= --2.5V --2.0 --1.5 --1.0 VGS=3V 1.0 --0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V [Nch] --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT07735 ID -- VGS --5.0 [Pch] VDS= --10V 4.0 5°C --2.0 25° --1.0 --25 °C --25° 25° C 1.0 C 2.0 --3.0 Ta= 7 3.0 C Drain Current, ID -- A --4.0 Ta=7 5°C Drain Current, ID -- A --0.2 Drain-to-Source Voltage, VDS -- V VDS=10V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V 0 4.5 ID=1A 60 40 20 --2.0 --2.5 --3.0 IT07737 [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 --1.5 RDS(on) -- VGS --220 Ta=25°C ID=2A --1.0 Gate-to-Source Voltage, VGS -- V [Nch] 120 100 --0.5 IT07736 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.1 IT07734 ID -- VGS 5.0 0 1.0 --200 --180 --160 ID= --1.5A --140 ID= --0.7A --120 --100 --80 --60 --40 --20 0 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 12 IT07738 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 --12 IT07739 No.8021-3/6 VEC2602 RDS(on) -- Ta [Nch] 120 100 V S=4 , VG I D=1A 60 =10V I D=2A, V GS 20 0 --50 --25 0 25 50 75 100 125 Ambient Temperature, Ta -- °C °C °C 75 C 25° 1.0 7 5 3 0.1 2 3 5 7 2 1.0 5 3 Drain Current, ID -- A IF -- VSD 20 --25 0 25 50 75 100 125 150 IT07741 yfs -- ID [Pch] VDS= --10V Ta= 2 --25 °C C 75° 25° C 1.0 7 5 3 --0.1 2 5 3 7 2 --1.0 5 3 Drain Current, ID -- A IF -- VSD [Nch] --10 7 5 3 2 Forward Current, IF -- A 0.01 7 5 3 2 --1.0 7 5 3 2 7 --10 IT07743 [Pch] VGS=0 --0.1 7 5 3 2 --0.01 7 5 3 2 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V IT07744 Ciss, Coss, Crss -- VDS 1000 1000 --1.2 IT07745 Ciss, Coss, Crss -- VDS [Nch] f=1MHz 7 [Pch] f=1MHz 7 5 Ciss Ciss 5 3 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 40 3 10 IT07742 5°C 25° C --25 °C 0.1 7 5 3 2 60 5 VGS=0 1.0 7 5 3 2 = --10V .5A, V GS 1 -= ID 80 7 7 Ta= 7 Forward Current, IF -- A 10 7 5 3 2 100 Ambient Temperature, Ta -- °C Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S Ta 120 10 5 2 A, VG --0.7 I D= [Nch] VDS=10V -25 =- .0V --4 S= 140 0 --50 150 7 3 160 IT07740 yfs -- ID 10 180 5°C 25° C --25 °C 40 [Pch] Ta= 7 80 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 2 100 Coss 7 Crss 5 3 2 Coss 100 3 7 2 5 Crss 3 10 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT07746 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT07747 No.8021-4/6 VEC2602 VGS -- Qg 10 VDS=10V ID=4A 8 7 6 5 4 3 2 --7 --6 --5 --4 --3 --2 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC IT07748 SW Time -- ID [Nch] 2 0 Switching Time, SW Time -- ns 100 7 td(off) 5 3 tf 2 td(on) 10 tr 7 2 4 5 3 6 8 10 12 Total Gate Charge, Qg -- nC IT07749 SW Time -- ID [Pch] 2 VDD=15V VGS=10V 100 Switching Time, SW Time -- ns --8 --1 0 VDD= --15V VGS= --10V td(off) 7 5 tf 3 2 td(on) 10 7 tr 5 3 2 2 1.0 --0.1 1.0 2 0.1 3 5 7 2 1.0 3 5 Drain Current, ID -- A 10 3 2 --10 7 5 1m 10 Drain Current, ID -- A s ID=4A m 3 2 10 DC s 0m s op er 3 2 ati on Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 3 2 5 2 3 5 7 2 --1.0 3 5 7 --10 IT07751 ASO <10µs 1m s ID= --3A 10 m DC 10 s 0m s op er 3 2 --0.1 7 5 [Pch] IDP= --12A --1.0 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT07752 PD -- Ta [Nch / Pch] 1.2 3 Drain Current, ID -- A <10µs 1.0 7 5 2 [Nch] IDP=16A 10 7 5 7 IT07750 ASO 3 2 Drain Current, ID -- A [Pch] VDS= --10V ID= --3A --9 1 Allowable Power Dissipation, PD -- W VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 9 Gate-to-Source Voltage, VGS -- V [Nch] ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT07753 Mounted on a ceramic board (900mm2✕0.8mm) 1.0 0.9 0.8 To t al Di 0.6 ss 1u ni t ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07754 No.8021-5/6 VEC2602 Note on usage : Since the VEC2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8021-6/6