FW342 Ordering number : ENN7912 N-Channel and P-Channel Silicon MOSFETs FW342 General-Purpose Switching Device Applications Features • • • For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID ID Drain Current (PW≤10s) Drain Current (PW≤100ms) ID IDP Drain Current (PW≤10µs) Allowable Power Dissipation PD Total Dissipation PT P-channel Unit 30 --30 V ±20 ±20 V 6 --5 A duty cycle≤1% 7 --5.5 A duty cycle≤1% 10 --9 A duty cycle≤1% 24 --20 A Mounted on a ceramic board (1500mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 1.8 W 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS ID=1mA, VGS=0 30 V VDS=30V, VGS=0 1 µA ±10 µA IGSS VGS(off) VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.2 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=6A 4.6 ID=6A, VGS=10V 25 33 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=3A, VGS=4.5V 35 49 mΩ ID=3A, VGS=4V 37 52 mΩ Cutoff Voltage Marking : W342 2.6 7.8 V S mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004 TS IM TA-101197 No.7912-1/6 FW342 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min typ Unit max VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 850 pF 170 pF 125 pF See specified Test Circuit. 12.5 ns See specified Test Circuit. 108 ns See specified Test Circuit. 77 ns See specified Test Circuit. 61 ns VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A 16 nC 3.4 nC VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 0.84 2.4 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 --30 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA --1.2 VDS=--10V, ID=--5A ID=--5A, VGS=--10V 4.5 ID=--3A, VGS=--4.5V ID=--3A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz 87 mΩ mΩ 70 98 mΩ pF 150 pF See specified Test Circuit. 13 ns See specified Test Circuit. 82 ns See specified Test Circuit. 87 ns See specified Test Circuit. 55 ns VDS=--10V, VGS=--10V, ID=--5A VDS=--10V, VGS=--10V, ID=--5A VDS=--10V, VGS=--10V, ID=--5A IS=--5A, VGS=0 16.5 nC 2.5 nC 2.5 --0.85 7 6 nC --1.5 V 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.3 0.43 6.0 4.4 1.5 1.27 53 62 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.1 0.595 41 Electrical Connection 1.8max 4 V S pF 5 5.0 7.5 195 8 1 --2.6 1000 Package Dimensions unit : mm 2129 8 V SANYO : SOP8 No.7912-2/6 FW342 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --15V VIN 10V 0V 0V --10V ID=6A RL=2.5Ω VIN D ID= --5A RL=3Ω VIN D VOUT PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW342 ID -- VDS [Nch] 50Ω V 3.0 [Nch] VDS=10V 5.0 3.0 2.0 VGS=2.5V 1.0 4.0 3.0 Ta= 7 5°C 6.0V 4.0 2.0 25°C Drain Current, ID -- A 4.0 V 5.0 S ID -- VGS 6.0 V 3.5 10.0V 4.5V 6.0 Drain Current, ID -- A FW342 P.G S 1.0 0 C 50Ω --25° P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT07380 RDS(on) -- VGS 100 0 1.0 [Nch] RDS(on) -- Ta 70 4.0 IT07381 [Nch] 90 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 80 70 60 ID=6A 50 ID=3A 40 30 20 10 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT07382 60 50 =4V , VGS 3A I D= 40 A, I D=3 30 V =4.5 VGS =10V A, V GS 6 = ID 20 10 10 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07383 No.7912-3/6 FW342 5 C 5° --2 2 = Ta °C 25 75 °C 1.0 7 3 2 0.6 0.8 0.1 7 5 2 2 3 5 7 2 1.0 3 5 0 7 10 IT07384 SW Time -- ID 7 5 [Nch] 0.4 1.0 1.2 IT07385 Ciss, Coss, Crss -- VDS 3 [Nch] f=1MHz VDD=15V VGS=10V 3 0.2 Diode Forward Voltage, VSD -- V 2 2 Ciss, Coss, Crss -- pF td(off) 100 7 5 tf 3 tr 2 td(on) 10 7 5 1000 Ciss 7 5 3 2 Coss 100 5 5 7 2 1.0 3 5 7 2 10 Drain Current, ID -- A 6 5 4 3 10 12 14 16 Total Gate Charge, Qg -- nC Operation in this area is limited by RDS(on). DC s op era tio n Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS --5 5 IT07389 [Pch] VDS= --10V Drain Current, ID -- A 5V -4. 0V --4 --3.0V --2.0 --1.0 0 0 s 10 Drain-to-Source Voltage, VDS -- V [Pch] --4 . --3.0 0m 0.01 0.1 18 --3 .5V V --10 .0 --6. 0V --4.0 ms 10 IT07388 ID -- VDS --5.0 10 3 2 3 2 0 [Nch] ID=6A 1.0 7 5 1 30 IT07387 ≤10µs 10 0 1m µs s 3 2 2 8 25 IDP=24A 10 7 5 0.1 7 5 6 20 ASO 5 3 2 7 4 15 [Nch] 8 2 10 Drain-to-Source Voltage, VDS -- V VDS=10V ID=6A 0 5 IT07386 VGS -- Qg 10 0 3 --3 --2 --1 VGS= --2.5V --25°C 3 Ta=7 5°C 2 Drain Current, ID -- A 9 Crss 7 3 2 0.1 25° C Switching Time, SW Time -- ns 1.0 7 5 0.01 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 3 5 3 0.1 Drain Current, ID -- A [Nch] VGS=0 --25°C 7 3 IF -- VSD 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S [Nch] VDS=10V Ta=7 5°C 25°C yfs -- ID 10 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT07390 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT07391 No.7912-4/6 FW342 RDS(on) -- VGS [Pch] 100 80 60 40 20 --6 --10 --8 --12 --14 Gate-to-Source Voltage, VGS -- V Forward Current, IF -- A --2 °C 75 3 °C 25 2 1.0 20 --40 --20 0 20 40 60 80 100 120 140 160 IT07393 IF -- VSD [Pch] VGS=0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 7 2 3 2 2 3 Drain Current, ID -- A 5 7 2 7 --10 IT07394 SW Time -- ID [Pch] --1.0 3 5 --0.01 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT07395 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V [Pch] f=1MHz 2 td(off) 100 7 tf 5 3 tr 2 10 7 5 3 Coss 2 td(on) 7 Ciss 1000 Crss 100 5 7 5 3 --0.1 2 3 5 7 2 5 3 Drain Current, ID -- A VGS -- Qg [Pch] --1.0 0 7 --10 IT07396 --10 Drain Current, ID -- A --6 --5 --4 --3 --2 --10 7 5 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 14 16 18 IT07398 --15 --20 --25 ≤10µs 10 0µ s 1m s IDP= --20A ID= --5A 10 ms 10 --1.0 7 5 3 2 --30 IT07397 [Pch] 3 2 Operation in this area is limited by RDS(on). DC 0m 10 s s op era tio --0.1 7 5 3 2 --1 --10 ASO 5 3 2 --8 --7 --5 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --5A --9 Gate-to-Source Voltage, VGS -- V 40 --10 7 5 Ciss, Coss, Crss -- pF Forward Transfer Admittance, yfs -- S [Pch] C 5° = Ta 60 Ambient Temperature, Ta -- °C 7 5 --0.1 Switching Time, SW Time -- ns --16 VDS= --10V 5 V = --4 , VGS A 3 V I D= --4.5 S= VG , --3A I D= V = --10 5A, V GS I D= -- 80 IT07392 yfs -- ID 10 100 5°C 25°C --4 120 0 --60 0 --2 [Pch] --25° C ID= --3A Ta= 7 ID= --5A 120 0 RDS(on) -- Ta 140 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 n Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT07399 No.7912-5/6 PD(FET 1) -- PD(FET 2) 2.2 [Nch, Pch] Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 PD -- Ta [Nch, Pch] Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.5 Allowable Power Dissipation, PD -- W Allowable Power Dissipation(FET 1), PD -- W FW342 2.2 2.0 1.8 To t 1.5 al 1u 1.0 di ni t ss ip ati on 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation(FET 2), PD -- W 2.0 2.2 IT07400 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT07401 Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.7912-6/6