VEC2607 Ordering number : ENN8359 VEC2607 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • The best suited for inverter applications. The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Low voltage drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 20 --12 V Gate-to-Source Voltage VGSS ±10 ±8 V 4.5 --4 A 18 --16 Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 Mounted on a ceramic board (900mm2✕0.8mm) A W 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=2.5A 4.5 V 1 µA ±10 µA 1.3 V Forward Transfer Admittance VGS(off) yfs ID=2A, VGS=4V ID=1A, VGS=2.5V 32 42 mΩ Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 40 57 mΩ ID=0.3A, VGS=1.8V VDS=10V, f=1MHz 55 80 mΩ Input Capacitance RDS(on)3 Ciss 570 pF Output Capacitance Coss VDS=10V, f=1MHz 110 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 80 pF Marking : CA 7.5 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TB-00001478 No.8359-1/6 VEC2607 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns Rise Time tr td(off) See specified Test Circuit. 105 ns See specified Test Circuit. 50 ns tf See specified Test Circuit. 52 ns Qg VDS=10V, VGS=4V, ID=4.5A 7.6 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A 1.2 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=4.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 2.1 0.85 nC 1.2 V --10 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±6.4V, VDS=0V Forward Transfer Admittance yfs RDS(on)1 VDS=--6V, ID=--2A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --12 VDS=--6V, ID=--1mA V --0.3 --1.0 4.5 7.6 V S ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V 37 49 54 75 mΩ mΩ 76 107 mΩ Input Capacitance Ciss ID=--0.3A, VGS=--1.8V VDS=--6V, f=1MHz 940 pF Output Capacitance Coss VDS=--6V, f=1MHz 230 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 180 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 120 ns See specified Test Circuit. 97 ns tf See specified Test Circuit. 110 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--4A 11 nC Gate-to-Source Charge Qgs nC Qgd VDS=--6V, VGS=--4.5V, ID=--4A VDS=--6V, VGS=--4.5V, ID=--4A 1.6 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--4A, VGS=0V 0.3 8 7 --0.85 8 7 6 2 3 V 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 6 5 4 0.65 1 0.75 2.9 0.07 1 nC --1.5 Electrical Connection 2.3 0.25 2.8 0.25 Package Dimensions unit : mm 7012-002 2.8 2 3 4 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 No.8359-2/6 VEC2607 Switching Time Test Circuit [N-channel] [P-channel] VDD=10V VIN VDD= --6V VIN 0V --4.5V 4V 0V ID=2.5A RL=4Ω VOUT VIN D PW=10µs D.C.≤1% ID= --2A RL=3Ω VOUT VIN D PW=10µs D.C.≤1% G G VEC2607 3.0 V 4.0 1.0 --2.0 [Pch] --2.5 V --2.5 Drain Current, ID -- A 1.5 V --1.8V V 2.5V 2.0 V V 5.0 V 6.0 V 8. 0V 2.0 ID -- VDS --3.0 1.5 10.0 Drain Current, ID -- A 2.5 [Nch] S V ID -- VDS 3.0 VEC2607 50Ω P.G S --1.5 50Ω --4.5V --3.5V --3.0 V P.G --1.5 VGS= --1.0V --1.0 --0.5 0.5 VGS=1.0V 0 0 0.1 0 0.2 0.3 Drain-to-Source Voltage, VDS -- V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V [Nch] ID -- VGS --6 2.5 --1.0 IT08898 [Pch] --3 --1 0 25°C --2 5°C --25° C 25° C 1.0 Ta=7 5°C 1.5 --4 --25 °C 2.0 Ta= 7 Drain Current, ID -- A --5 0.5 0 0 0.5 1.0 1.5 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Gate-to-Source Voltage, VGS -- V IT08595 RDS(on) -- VGS 120 0 2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS [Nch] 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2A 100 1A 0.3A 80 60 40 20 0 0 1 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V 7 8 IT09784 --1.6 --1.8 IT08899 [Pch] Ta=25°C Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 VDS= --6V VDS=10V Drain Current, ID -- A --0.1 IT08593 ID -- VGS 3.0 0 0.4 140 ID= --2.0A 120 --1.0A 100 --0.3A 80 60 40 20 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --5.5 --6.0 --6.5 Gate-to-Source Voltage, VGS -- V IT09785 No.8359-3/6 VEC2607 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 =1.8V , VGS A 3 . 0 I D= =2.5V A, V GS .0 1 = ID =4.0V A, V GS I D=2.0 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C -2 =- Ta °C 75 °C 25 2 2 3 5 7 2 1.0 --20 0 40 60 80 100 120 140 160 IT09787 yfs -- ID [Pch] 7 5 = Ta 3 2 5 --2 °C C 25° °C 75 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT03869 Drain Current, ID -- A --10 7 5 Source Current, IS -- A Ta= 20 VDS= --6V IS -- VSD [Nch] 75 ° 25° C --25 C °C Source Current, IS -- A --40 10 VGS=0V [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 5 --0.01 --0.2 1.4 --0.6 --0.8 5 td(off) 7 tf 5 tr 3 2 td(on) 10 [Pch] VDD= --6V VGS= --4.5V 3 100 --1.2 IT08902 SW Time -- ID [Nch] 2 --1.0 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V 7 0.1 --0.4 IT08708 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 20 IT09308 IS -- VSD 0 3 40 2 5 3 Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 60 Ambient Temperature, Ta -- °C Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S C 5° 1.0 0.1 5V = --2. VGS , A 0 . 1 I D= -V = --4.5 .0A, V GS 2 -= ID 3 7 3 --0 I D= 80 [Nch] VDS=10V 5 = --1 VGS .3A, IT09786 yfs -- ID 10 .8V 100 0 --60 160 [Pch] 120 Ta= 75° C 25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 100 60 RDS(on) -- Ta [Nch] --25° C RDS(on) -- Ta 120 2 td (off) 100 tf 7 tr 5 3 2 td(on) 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT09309 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 IT09310 No.8359-4/6 VEC2607 Ciss, Coss, Crss -- VDS 2 [Nch] f=1MHz Ciss, Coss, Crss -- VDS 2 [Pch] f=1MHz 7 Ciss 5 3 2 Coss 100 Crss Ciss 1000 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 1000 7 5 3 Coss Crss 2 7 5 3 100 0 5 10 15 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 3.0 2.5 2.0 1.5 1.0 0.5 --8 --6 --10 --12 IT03872 VGS -- Qg --4.5 [Pch] VDS= --6V ID= --4A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0 1 2 3 4 5 6 7 0 8 Total Gate Charge, Qg -- nC IT09311 ASO [Nch] 3 2 IDP=18A ID=4.5A --10 7 5 DC 1.0 7 5 Drain Current, ID -- A s 10 m 10 s 0m s op er ati on 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 3 Drain-to-Source Voltage, VDS -- V IT09285 PD -- Ta [Nch / Pch] 1.2 6 8 10 12 IT09312 [Pch] IDP= --16A <10µs 1m s ID= --4A 10 ms 10 3 2 DC --1.0 7 5 0m s op era tio n 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 2 4 ASO 3 2 1m 3 2 2 Total Gate Charge, Qg -- nC ≤10µs 10 7 5 Drain Current, ID -- A --4 Drain-to-Source Voltage, VDS -- V [Nch] VDS=10V ID=4.5A 3.5 --2 IT08607 VGS -- Qg 4.0 0 20 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 IT09286 Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm2✕0.8mm) 1.0 0.9 0.8 To t al Di 0.6 ss 1u ni t ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09287 No.8359-5/6 VEC2607 Note on usage : Since the VEC2607 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8359-6/6