Ordering number:ENN6389 N-Channel and P-Channel Silicon MOSFETs FW313 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2129 [FW313] 8 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.2 1.8max 1 6.0 4.4 · Low ON resistance. · Ultrahigh-speed switching. · Composite type with a N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. · High-density mounting. 0.3 Features Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Ratings Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID P-channel Unit 30 –30 V ±20 ±20 V 7 –5 A 28 –20 A 1.7 W Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit Total Dissipation PD PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance ID=1mA, VGS=0 30 V VDS=30V, VGS=0 10 µA ±10 µA 2.4 V 25 32 mΩ 37 50 mΩ VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A RDS(on)1 ID=7A, VGS=10V RDS(on)2 ID=4A, VGS=4V 1.0 9 13 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2373 No.6389-1/6 FW313 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Input Capacitance Ciss VDS=10V, f=1MHz 700 pF Output Capacitance Coss 380 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 180 pF Turn-ON Delay Time td(on) See specified Test Circuit 15 ns tr See specified Test Circuit 180 ns td(off) See specified Test Circuit 90 ns tf See specified Test Circuit 80 ns Qg VDS=10V, VGS=10V, ID=7A 22 nC 5 nC 6 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=7A VDS=10V, VGS=10V, ID=7A Diode Forward Voltage VSD IS=7A, VGS=0 0.85 1.2 V –10 µA ±10 µA –2.5 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=–1mA, VGS=0 IGSS VGS(off) | yfs | VGS=±16V, VDS=0 RDS(on)1 ID=–5A, VGS=–10V ID=–2A, VGS=–4V RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge –30 V VDS=–30V, VGS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A –1.0 5 8 S 42 53 mΩ 85 120 mΩ VDS=–10V, f=1MHz VDS=–10V, f=1MHz 820 pF 470 pF 230 pF td(on) VDS=–10V, f=1MHz See specified Test Circuit 15 ns tr See specified Test Circuit 150 ns td(off) See specified Test Circuit 85 ns tf See specified Test Circuit 90 ns Qg VDS=–10V, VGS=–10V, ID=–5A 25 nC 5 nC 7 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–5A VDS=–10V, VGS=–10V, ID=–5A Diode Forward Voltage VSD IS=–5A, VGS=0 –1.0 –1.5 V Marking : W313 Electrical Connection D1 D1 D2 D2 S1 G1 S2 G2 (Top view) Switching Time Test Circuit [N-channel] Switching Time Test Circuit [P-channel] VDD=15V VDD=--15V VIN VIN 10V 0V ID=4A RL=3.75Ω VIN D PW=10µs D.C.≤1% VOUT 0V --10V D PW=10µs D.C.≤1% G P.G ID=--3A RL=5Ω VIN VOUT G FW313 50Ω S P.G FW313 50Ω S No.6389-2/6 FW313 ID -- VDS 8 10 6.0V 9 3 2 6 5 25°C 2.5V 4 7 4 C 5 --25° Drain Current, ID – A 8 3.0 V 10.0V 6 Drain Current, ID – A 4.0 V 3.5 V 7 [Nch] VDS=10V Ta=75 °C 8.0V ID -- VGS [Nch] 3 2 1 1 VGS=2.0V 0 0.1 0 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS – V 0 1.0 0.5 IT00900 RDS(on) -- VGS 100 0 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS – V IT00901 RDS(on) -- Ta [Nch] [Nch] 70 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 80 ID=4A 7A 60 50 40 30 20 10 2 3 4 5 6 7 8 9 yfs -- ID 100 7 5 --20 0 20 60 80 100 120 140 160 [Nch] 10 7 5 Forward Current, IF – A °C 25 °C 75 VGS = 0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain Current, ID – A IT00904 SW Time -- ID [Nch] 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 3 tf tr 3 2 td(on) 10 7 5 [Nch] f=1MHz 3 2 td(off) 100 7 5 1.0 IT00905 Ciss, Coss, Crss -- VDS 10000 7 5 2 0.9 Diode Forward Voltage, VSD – V VDD=15V VGS=10V 3 1000 Ciss 7 5 Coss 3 2 Crss 100 7 5 3 2 2 1.0 0.1 40 IT00903 3 2 1000 7 5 --40 IF -- VSD =-Ta 1.0 7 5 10 [Nch] C 25° 3 2 20 Ambient Temperature, Ta – ˚C 3 2 10 7 5 =10V VGS IT00902 VDS=10V 0.1 0.01 Switching Time, SW Time – ns 10 Ciss, Coss, Crss – pF Forward Transfer Admittance, | yfs | – S Gate-to-Source Voltage, VGS – V A, I D=7 30 --25°C 1 =4V , VGS 4A I D= 40 0 --60 0 0 50 25°C 70 60 Ta=7 5°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 90 10 2 3 5 7 1.0 2 Drain Current, ID – A 3 5 7 10 IT00906 0 5 10 15 20 Drain-to-Source Voltage, VDS – V 25 30 IT00907 No.6389-3/6 FW313 VGS -- Qg 9 100 7 5 3 2 8 7 6 5 4 3 10 7 5 3 2 0.1 7 5 3 2 1 5 10 15 20 25 Total Gate Charge, Qg – nC op era tio Operation in this n area is limited by RDS(on). Ta=25°C Single pulse 1 unit board (1000mm2×0.8mm) 2 3 5 7 10 2 3 5 7 100 IT00909 Drain-to-Source Voltage, VDS – V ID -- VGS [Pch] --10 [Pch] VDS=--10V --8.0V --9 --5 5°C --5 --4 --3 --2 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS – V 0 0 --1.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS – V IT00910 RDS(on) -- VGS 200 --2 5 --1 VGS=--2.0V 0 25°C --2.5V --6 Ta= 7 --2 --7 °C V 0 --3. --3 Drain Current, ID – A .0V --4 --4 0V --6.0 V --8 --10 . Drain Current, ID – A 10 0m s DC IT00908 ID -- VDS --6 10µs 100µs 1 10 ms ms ID=7A 0.01 Mounted on a ceramic 2 3 5 7 1.0 0.1 0 [Nch] IDP=28A 1.0 7 5 3 2 2 0 ASO [Nch] VDS=10V ID=7A Drain Current, ID – A Gate-to-Source Voltage, VGS – V 10 RDS(on) -- Ta [Pch] 140 Ta=25°C --4.0 IT00911 [Pch] 160 ID=--2A --5A 120 100 80 60 40 20 --2 --3 --4 --5 --6 --7 --8 --9 Forward Transfer Admittance, | yfs | – S Gate-to-Source Voltage, VGS – V 1.0 7 5 3 2 C 25° 0.1 7 5 3 2 0.01 --0.01 2 3 5°C --2 Ta= 40 20 --40 --20 0 --10 7 5 °C 75 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT00913 IF -- VSD [Pch] [Pch] VDS=--10V 10 7 5 3 2 =--10V A, V GS I D=--5 60 IT00912 yfs -- ID 100 7 5 3 2 --10 Forward Current, IF – A --1 -I D= 80 0 --60 0 0 V =--4 VGS 2A, 100 VGS = 0 3 2 --1.0 7 5 3 2 --0.1 7 5 Ta=75°C 25 °C 140 120 3 2 --25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 180 --0.01 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain Current, ID – A 2 3 5 7--100 IT00914 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD – V --1.2 --1.4 IT00915 No.6389-4/6 FW313 SW Time -- ID 1000 [Pch] VDD=--15V VGS=--10V 5 tr 2 tf 100 td(off) 7 5 2 100 7 5 3 2 3 5 7 2 --1.0 3 5 7 0 --10 VGS -- Qg --100 7 5 3 2 Drain Current, ID – A --7 --6 --5 --4 --3 --10 7 5 3 2 --1 0 10 15 20 25 Total Gate Charge, Qg – nC do ce ram 1.4 ic 1.2 bo ard (1 00 1.0 0m m2 ×0 0.8 .8m m) 0.6 1u nit 0.4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 DC 1.6 1.8 2.0 Allowable Power Dissipation (FET2), PD – W IT00921 100µs 1 10 ms ms 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1 unit board (1000mm2×0.8mm) 2 3 5 7 --10 2 3 5 7 --100 IT00919 Drain-to-Source Voltage, VDS – V PD -- Ta [Nch, Pch] 2.0 1.7 To 1.5 tal Di ss 1u 1.0 ip ati on nit 0.5 0 0 0.2 10 --0.01 Mounted on a ceramic 2 3 5 7 --1.0 --0.1 Allowable Power Dissipation, PD – W nte na [Pch] 2.5 ou 1.6 --30 ASO [Nch, Pch] M --25 IT00917 ID=--5A IT00918 PD(FET 1) -- PD(FET 2) 2.0 --20 --15 IDP=--20A --1.0 7 5 3 2 --0.1 7 5 3 2 --2 5 --10 Drain-to-Source Voltage, VDS – V [Pch] --8 0 --5 IT00916 VDS=--10V ID=--5A 0 Crss 10 2 --10 1.8 Coss 3 2 td(on) --9 Ciss 1000 7 5 3 Drain Current, ID – A Gate-to-Source Voltage, VGS – V f=1MHz 3 2 3 10 --0.1 Allowable Power Dissipation (FET1), PD – W [Pch] 7 5 Ciss, Coss, Crss – pF Switching Time, SW Time – ns 7 Ciss, Coss, Crss -- VDS 10000 Mounted on a ceramic board (1200mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00920 No.6389-5/6 FW313 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6389-6/6