FW340 Ordering number : ENA0424 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW340 General-Purpose Switching Device Applications Features • • • For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID Drain Current (PW≤10s) ID Duty cycle≤1% ID IDP Duty cycle≤1% Duty cycle≤1% Drain Current (PW≤100ms) Drain Current (PW≤10µs) Allowable Power Dissipation PD Total Dissipation PT Mounted on a ceramic board (2000mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s 5 --5 A 5.5 --5.5 A 7 --9 A 20 --20 A 1.8 W 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A RDS(on)1 RDS(on)2 ID=5A, VGS=10V ID=3A, VGS=4.5V 37 48 mΩ Static Drain-to-Source On-State Resistance 56 78 mΩ RDS(on)3 ID=3A, VGS=4V 64 90 mΩ Cutoff Voltage Marking : W340 V(BR)DSS 30 V 1.2 3.3 1 µA ±10 µA 2.6 5.5 V S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PA MS IM TB-00002412 No. A0424-1/6 FW340 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 460 Output Capacitance 95 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 20 ns See specified Test Circuit. 30 ns tf See specified Test Circuit. 20 ns Qg VDS=10V, VGS=10V, ID=5A 8.6 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A 2.0 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=5A, VGS=0V 0.9 Turn-OFF Delay Time Fall Time Total Gate Charge 1.6 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--5A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage V(BR)DSS --30 V --1.2 4.5 --2.6 7.5 V S ID=--5A, VGS=--10V ID=--3A, VGS=--4.5V 41 53 62 87 mΩ mΩ 70 98 mΩ Input Capacitance Ciss ID=--3A, VGS=--4V VDS=--10V, f=1MHz 1000 pF Output Capacitance Coss VDS=--10V, f=1MHz 195 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 150 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr td(off) See specified Test Circuit. 82 ns See specified Test Circuit. 87 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 55 ns VDS=--10V, VGS=--10V, ID=--5A See specified Test Circuit. 16.5 nC 2.5 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A VDS=--10V, VGS=--10V, ID=--5A Diode Forward Voltage VSD IS=--5A, VGS=0V Package Dimensions 2.5 --0.85 nC --1.5 V Electrical Connection unit : mm 7005-003 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 5 1 4 1.27 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.1 5.0 1.5 1.8 MAX 0.43 0.595 6.0 4.4 0.3 8 8 SANYO : SOP8 No. A0424-2/6 FW340 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --15V VIN 10V 0V 0V --10V ID=5A RL=3Ω VIN D ID= --5A RL=3Ω VIN VOUT D PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW340 P.G 50Ω 50Ω S ID -- VGS 10 9 8 2 VGS=2.0V 7 6 5 4 Ta=7 5°C °C 25°C 2.5V 3 2 --25 1 1 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 140 0 1.0 [Nch] 120 100 ID=3A 5A 60 40 20 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT11087 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 140 Ta=25°C 80 0.5 IT04957 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Nch] VDS=10V V 3.0 3.5 [Nch] Drain Current, ID -- A 3 4.0V 10.0V 8.0V 6.0V 4 V ID -- VDS 5 Drain Current, ID -- A FW340 P.G S 4.5 5.0 IT04958 [Nch] 120 100 V =4.0 , VGS 80 A I D=3 60 V =4.5 , VGS A I D=3 0.0V S=1 40 , VG I D=5A 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT11088 No. A0424-3/6 FW340 7 5 3 °C -25 a= °C °C T 75 25 2 1.0 7 5 3 3 5 7 2 0.1 3 5 7 2 1.0 3 0.1 7 5 3 2 5 7 SW Time -- ID 100 0 10 IT11089 Drain Current, ID -- A [Nch] 0.4 0.6 0.8 1.0 1.2 1.4 IT04962 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V 7 0.2 Diode Forward Voltage, VSD -- V [Nch] f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF 5 td (off) 3 tf 2 3 2 Coss 100 7 Crss 5 tr 2 3 5 7 td(on) 2 1.0 3 3 5 7 Drain Current, ID -- A VGS -- Qg 10 0 10 IT04963 [Nch] Drain Current, ID -- A 8 6 5 4 3 0 3 5 6 7 8 IT11091 ID -- VDS [Pch] ms 0m s DC Operation in this area is limited by RDS(on). 10 s op era tio n Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT11092 ID -- VGS --10 [Pch] VDS= --10V 5V 0V --9 --3 . --10 . --8 5V -4. Drain Current, ID -- A 0V V --6. 0 --3.0V --4 . --3.0 10 10 0.01 0.1 9 Total Gate Charge, Qg -- nC --5.0 --4.0 4 ID=5A 3 2 3 2 30 IT11090 PW≤10µs 100 µs 1m s IDP=20A 1.0 7 5 1 2 25 [Nch] 3 2 2 1 20 ASO 10 7 5 0.1 7 5 0 15 5 3 2 7 10 Drain-to-Source Voltage, VDS -- V VDS=10V ID=5A 9 5 --2.0 --1.0 --7 --6 --5 --4 --3 --2 VGS= --2.5V Ta=7 5°C --25° C 10 0.1 25° C Switching Time, SW Time -- ns 1.0 7 5 3 2 0.001 2 0.01 Gate-to-Source Voltage, VGS -- V [Nch] VGS=0V 10 7 5 3 2 0.01 7 5 3 2 2 0.1 Drain Current, ID -- A IS -- VSD 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [Nch] VDS=10V Ta= 75°C 25°C --25° C yfs -- ID 10 --1 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT07390 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT11093 No. A0424-4/6 FW340 RDS(on) -- VGS [Pch] 80 60 40 20 --12 --14 Gate-to-Source Voltage, VGS -- V [Pch] Source Current, IS -- A C 5° 2 = Ta --2 °C 75 1.0 °C 25 7 5 3 --20 0 20 40 60 80 100 120 140 160 IT07393 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 3 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT11094 SW Time -- ID [Pch] --0.01 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT07395 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V 2 [Pch] f=1MHz 2 td(off) 100 7 tf 5 3 tr 2 10 7 5 3 Coss 2 td(on) 7 Ciss 1000 Crss 100 5 7 5 3 --0.1 2 3 5 7 2 5 3 Drain Current, ID -- A VGS -- Qg [Pch] --1.0 0 7 --10 IT07396 --10 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --10 7 5 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 14 16 18 IT07398 --10 --15 --20 --25 --30 [Pch] PW≤10µs IDP= --20A 10 0µ 1m s 10 ID= --5A s ms 10 0m s --1.0 7 5 3 2 IT07397 ASO 3 2 Operation in this area is limited by RDS(on). DC 10 s op era tio --0.1 7 5 3 2 --1 --5 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --5A --9 Gate-to-Source Voltage, VGS -- V --40 --10 7 5 Ciss, Coss, Crss -- pF Forward Transfer Admittance, yfs -- S 3 20 Ambient Temperature, Ta -- °C 5 0.1 --0.01 Switching Time, SW Time -- ns --16 VDS= --10V 7 40 IT07392 yfs -- ID 10 60 5°C 25°C --10 --8 --4V S= A, VG 3 V I D= --4.5 S= VG , --3A I D= V = --10 , V GS A 5 -I D= 80 Ta= 7 --6 100 0 --60 0 --4 120 --25° C ID= --3A 100 --2 [Pch] Ta=25°C ID= --5A 120 0 RDS(on) -- Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 n Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11095 No. A0424-5/6 PD(FET 1) -- PD(FET 2) 2.2 Mounted on a ceramic board PW≤10s 2.0 [Nch, Pch] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 PD -- Ta [Nch, Pch] Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s 2.5 (2000mm2✕0.8mm), Allowable Power Dissipation, PD -- W Allowable Power Dissipation(FET 1), PD -- W FW340 2.2 2.0 1.8 To t 1.5 al 1u 1.0 di ni t ss ip ati on 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation(FET 2), PD -- W 2.0 2.2 IT11096 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11097 Note on usage : Since the FW340 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0424-6/6