SANYO FW341

FW341
Ordering number : ENN7922
N-Channel and P-Channel Silicon MOSFETs
FW341
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Best suited for motor drive application.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
P-channel
Unit
30
--30
V
±20
±20
V
A
ID
ID
3.5
--2.5
Drain Current (PW≤10s)
duty cycle≤1%
4
--3
A
Drain Current (PW≤100ms)
ID
duty cycle≤1%
6
--4.5
A
IDP
duty cycle≤1%
14
--10
A
Drain Current (PW≤10µs)
Allowable Power Dissipation
PD
Total Dissipation
PT
Mounted on a ceramic board
(2000mm2✕0.8mm)1unit
Mounted on a ceramic board
(2000mm2✕0.8mm)
1.4
W
1.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0
30
V
VDS=30V, VGS=0
1
µA
±10
µA
2.6
V
IGSS
VGS(off)
VGS=±16V, VDS=0
VDS=10V, ID=1mA
1.2
yfs
RDS(on)1
VDS=10V, ID=3.5A
3.0
ID=3.5A, VGS=10V
64
84
mΩ
RDS(on)2
ID=1.8A, VGS=4V
105
150
mΩ
Marking : W341
5.3
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-100623 No.7922-1/6
FW341
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
td(off)
tf
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
min
typ
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Qg
Gate-to-Source Charge
Ratings
Conditions
Unit
max
180
pF
42
pF
25
pF
See specified Test Circuit.
7
ns
See specified Test Circuit.
15
ns
See specified Test Circuit.
19
ns
See specified Test Circuit.
5
ns
VDS=10V, VGS=10V, ID=3.5A
VDS=10V, VGS=10V, ID=3.5A
5.0
nC
0.9
nC
VDS=10V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0
0.6
nC
0.88
1.2
V
--1
µA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
VGS(off)
yfs
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
ID=--1mA, VGS=0
VDS=--30V, VGS=0
--30
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
2
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
mΩ
240
340
mΩ
S
pF
pF
VDS=--10V, f=1MHz
See specified Test Circuit.
32
pF
7
ns
See specified Test Circuit.
3.5
ns
See specified Test Circuit.
20
ns
See specified Test Circuit.
8
ns
5.5
nC
0.98
nC
VDS=--10V, VGS=--10V, ID=--2.5A
VDS=--10V, VGS=--10V, ID=--2.5A
VDS=--10V, VGS=--10V, ID=--2.5A
IS=--2.5A, VGS=0
0.82
--0.87
7
6
nC
--1.5
V
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.3
0.43
6.0
4.4
1.5
1.27
145
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Top view
0.1
0.595
110
Electrical Connection
1.8max
4
V
3
47
8
5.0
µA
200
5
1
±10
--2.6
--1.2
VDS=--10V, ID=--2.5A
ID=--2.5A, VGS=--10V
Package Dimensions
unit : mm
2129
8
V
SANYO : SOP8
No.7922-2/6
FW341
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
VDD= --15V
VIN
10V
0V
0V
--10V
ID=3.5A
RL=4.3Ω
VIN
D
ID= --2.5A
RL=6Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
G
G
FW341
5V
4
V GS=3V
3
2
1
[Nch]
VDS=10V
3.0
Drain Current, ID -- A
10V
5
ID -- VGS
3.5
4V
S
6V
8V
6
[Nch]
50Ω
°C
75°C
25°C
ID -- VDS
7
Drain Current, ID -- A
FW341
P.G
S
Ta=--2
5
50Ω
2.5
2.0
1.5
Ta=7
5°C
°C
25°C
P.G
1.0
--25
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS -- V
IT06650
RDS(on) -- VGS
300
0
1.0
[Nch]
RDS(on) -- Ta
200
4.0
IT06651
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
250
200
150
3.5A
ID=1.8A
100
50
0
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
IT06652
150
4V
S=
, VG
1.8A
I D=
100
.5A,
I D=3
=10V
VGS
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT06653
No.7922-3/6
FW341
yfs -- ID
[Nch]
7
5
75
°C
7
5
3
2
3
5 7
2
0.1
3
5 7
2
1.0
3
0.1
7
5
0.01
0.2
5 7
10
IT06654
Drain Current, ID -- A
SW Time -- ID
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
[Nch]
1.2
IT06655
Ciss, Coss, Crss -- VDS
1000
VDD=15V
VGS=10V
7
[Nch]
f=1MHz
7
5
5
3
Ciss, Coss, Crss -- pF
td(off)
2
10
td(on)
7
5
tf
3
tr
3
Ciss
2
100
7
5
Coss
3
Crss
2
2
10
1.0
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
VGS -- Qg
10
7
0
10
IT06656
[Nch]
3
2
VDS=10V
ID=3.5A
9
Drain Current, ID -- A
8
6
5
4
3
2
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
[Pch]
30
ASO
[Nch]
<10µs
10
0µ
s
1m
s
10
ms
0m
1.0
7
5
s
DC
op
era
10
tio
3
2
Operation in this
area is limited by RDS(on).
0.1
7
5
s
n
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm2✕ 0.8mm)1unit
2
3
5
7 1.0
2
3
5
7 10
Drain-to-Source Voltage, VDS -- V
ID -- VGS
--5.0
2
3
5
IT06659
[Pch]
0V
VDS=10V
--4.5
--4.
--6.0
V
--10.
0V
25
IT06657
10
IT06658
ID -- VDS
--2.0
20
ID=3.5A
0.01
0.1
6
15
3
2
3
2
1
10
Drain-to-Source Voltage, VDS -- V
IDP=14A
10
7
5
7
5
--4.0
--1.2
VGS= --3.0V
--0.8
--3.5
--3.0
--2.5
--2.0
--1.5
5°C
°C --25°
C
5V
.
--3
Drain Current, ID -- A
--1.6
Ta=
7
--1.0
--0.4
--0.5
0
25
Switching Time, SW Time -- ns
2
2
0.01
Gate-to-Source Voltage, VGS -- V
3
3
2
0.1
Drain Current, ID -- A
1.0
7
5
--25°C
=
Ta
1.0
C
--2
2
Ta=7
5°C
25°C
5°
2
[Nch]
VGS=0
3
°C
25
3
IF -- VSD
10
7
5
VDS=10V
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
10
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT03212
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
--4.0
--4.5
IT03213
No.7922-4/6
FW341
450
400
350
--2.5A
ID= --1.0A
200
150
100
50
--2
--3
--4
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
°C
25
1.0
=
Ta
7
5°C
--2
°C
75
5
3
.5
I D= --2
100
50
--40
--20
0
20
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
SW Time -- ID
2
80
100
120
140
160
IT07524
[Pch]
VGS=0
--1.0
7
5
3
2
--0.1
7
5
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
Diode Forward Voltage, VSD -- V
3
--1.2
IT03217
Ciss, Coss, Crss -- VDS
[Pch]
[Pch]
f=1MHz
VDD= --15V
VGS= --10V
100
60
3
2
--0.01
--0.2
5 7 --10
IT03216
Drain Current, ID -- A
40
IF -- VSD
3
2
2
0.1
--0.01
Ciss
2
7
5
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
= --10V
A, V GS
150
--10
7
5
5
2
V
= --4
VGS
Ambient Temperature, Ta -- °C
[Pch]
3
A,
--1.0
200
0
--60
--10
VDS= --10V
7
I D=
250
IT07523
yfs -- ID
10
300
°C
250
[Pch]
350
Ta=7
5
300
RDS(on) -- Ta
400
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
[Pch]]
Ta=25°C
25°C
--25°C
RDS(on) -- VGS
500
td(off)
2
10
tf
td(on)
7
5
100
7
5
Coss
tr
3
Crss
3
2
2
1.0
--0.1
10
2
3
5
7
2
--1.0
3
Drain Current, ID -- A
[Pch]
--8
--7
3
2
Drain Current, ID -- A
--6
--5
--4
--1
3
2
1
2
3
4
Total Gate Charge, Qg -- nC
5
6
IT03220
--20
--25
--30
IT03219
ASO
[Pch]
<10µs
10
0µ
1m
ID= --2.5A
DC
m
0m
s
op
s
s
10
10
er
3
2
--2
0
--15
IDP= --10A
--1.0
7
5
--0.1
7
5
--3
--10
2
--10
7
5
0
--5
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --2.5A
--9
Gate-to-Source Voltage, VGS -- V
0
IT03218
VGS -- Qg
--10
5
ati
on
s
10
s
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm2✕0.8mm) 1unit
--0.01
--0.01 2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT07525
No.7922-5/6
FW341
PD -- Ta
Allowable Power Dissipation, PD -- W
2.0
[Pch, Nch]
Mounted on a ceramic board (2000mm2 ✕ 0.8mm)
1.7
1.5
1.4
To
t
al
Di
ss
1.0
11uu
nniitt
ip
ati
on
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07526
Note on usage : Since the FW341 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS No.7922-6/6