FW341 Ordering number : ENN7922 N-Channel and P-Channel Silicon MOSFETs FW341 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Best suited for motor drive application. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) P-channel Unit 30 --30 V ±20 ±20 V A ID ID 3.5 --2.5 Drain Current (PW≤10s) duty cycle≤1% 4 --3 A Drain Current (PW≤100ms) ID duty cycle≤1% 6 --4.5 A IDP duty cycle≤1% 14 --10 A Drain Current (PW≤10µs) Allowable Power Dissipation PD Total Dissipation PT Mounted on a ceramic board (2000mm2✕0.8mm)1unit Mounted on a ceramic board (2000mm2✕0.8mm) 1.4 W 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0 30 V VDS=30V, VGS=0 1 µA ±10 µA 2.6 V IGSS VGS(off) VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=3.5A 3.0 ID=3.5A, VGS=10V 64 84 mΩ RDS(on)2 ID=1.8A, VGS=4V 105 150 mΩ Marking : W341 5.3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004 TS IM TA-100623 No.7922-1/6 FW341 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD min typ VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Qg Gate-to-Source Charge Ratings Conditions Unit max 180 pF 42 pF 25 pF See specified Test Circuit. 7 ns See specified Test Circuit. 15 ns See specified Test Circuit. 19 ns See specified Test Circuit. 5 ns VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A 5.0 nC 0.9 nC VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0 0.6 nC 0.88 1.2 V --1 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage VGS(off) yfs Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 --30 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA 2 ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz mΩ 240 340 mΩ S pF pF VDS=--10V, f=1MHz See specified Test Circuit. 32 pF 7 ns See specified Test Circuit. 3.5 ns See specified Test Circuit. 20 ns See specified Test Circuit. 8 ns 5.5 nC 0.98 nC VDS=--10V, VGS=--10V, ID=--2.5A VDS=--10V, VGS=--10V, ID=--2.5A VDS=--10V, VGS=--10V, ID=--2.5A IS=--2.5A, VGS=0 0.82 --0.87 7 6 nC --1.5 V 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.3 0.43 6.0 4.4 1.5 1.27 145 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.1 0.595 110 Electrical Connection 1.8max 4 V 3 47 8 5.0 µA 200 5 1 ±10 --2.6 --1.2 VDS=--10V, ID=--2.5A ID=--2.5A, VGS=--10V Package Dimensions unit : mm 2129 8 V SANYO : SOP8 No.7922-2/6 FW341 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --15V VIN 10V 0V 0V --10V ID=3.5A RL=4.3Ω VIN D ID= --2.5A RL=6Ω VIN D VOUT PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW341 5V 4 V GS=3V 3 2 1 [Nch] VDS=10V 3.0 Drain Current, ID -- A 10V 5 ID -- VGS 3.5 4V S 6V 8V 6 [Nch] 50Ω °C 75°C 25°C ID -- VDS 7 Drain Current, ID -- A FW341 P.G S Ta=--2 5 50Ω 2.5 2.0 1.5 Ta=7 5°C °C 25°C P.G 1.0 --25 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT06650 RDS(on) -- VGS 300 0 1.0 [Nch] RDS(on) -- Ta 200 4.0 IT06651 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 250 200 150 3.5A ID=1.8A 100 50 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT06652 150 4V S= , VG 1.8A I D= 100 .5A, I D=3 =10V VGS 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT06653 No.7922-3/6 FW341 yfs -- ID [Nch] 7 5 75 °C 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 3 0.1 7 5 0.01 0.2 5 7 10 IT06654 Drain Current, ID -- A SW Time -- ID 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V [Nch] 1.2 IT06655 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V 7 [Nch] f=1MHz 7 5 5 3 Ciss, Coss, Crss -- pF td(off) 2 10 td(on) 7 5 tf 3 tr 3 Ciss 2 100 7 5 Coss 3 Crss 2 2 10 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A VGS -- Qg 10 7 0 10 IT06656 [Nch] 3 2 VDS=10V ID=3.5A 9 Drain Current, ID -- A 8 6 5 4 3 2 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC [Pch] 30 ASO [Nch] <10µs 10 0µ s 1m s 10 ms 0m 1.0 7 5 s DC op era 10 tio 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 s n Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕ 0.8mm)1unit 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V ID -- VGS --5.0 2 3 5 IT06659 [Pch] 0V VDS=10V --4.5 --4. --6.0 V --10. 0V 25 IT06657 10 IT06658 ID -- VDS --2.0 20 ID=3.5A 0.01 0.1 6 15 3 2 3 2 1 10 Drain-to-Source Voltage, VDS -- V IDP=14A 10 7 5 7 5 --4.0 --1.2 VGS= --3.0V --0.8 --3.5 --3.0 --2.5 --2.0 --1.5 5°C °C --25° C 5V . --3 Drain Current, ID -- A --1.6 Ta= 7 --1.0 --0.4 --0.5 0 25 Switching Time, SW Time -- ns 2 2 0.01 Gate-to-Source Voltage, VGS -- V 3 3 2 0.1 Drain Current, ID -- A 1.0 7 5 --25°C = Ta 1.0 C --2 2 Ta=7 5°C 25°C 5° 2 [Nch] VGS=0 3 °C 25 3 IF -- VSD 10 7 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 10 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT03212 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 --4.5 IT03213 No.7922-4/6 FW341 450 400 350 --2.5A ID= --1.0A 200 150 100 50 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S °C 25 1.0 = Ta 7 5°C --2 °C 75 5 3 .5 I D= --2 100 50 --40 --20 0 20 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 2 80 100 120 140 160 IT07524 [Pch] VGS=0 --1.0 7 5 3 2 --0.1 7 5 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V 3 --1.2 IT03217 Ciss, Coss, Crss -- VDS [Pch] [Pch] f=1MHz VDD= --15V VGS= --10V 100 60 3 2 --0.01 --0.2 5 7 --10 IT03216 Drain Current, ID -- A 40 IF -- VSD 3 2 2 0.1 --0.01 Ciss 2 7 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns = --10V A, V GS 150 --10 7 5 5 2 V = --4 VGS Ambient Temperature, Ta -- °C [Pch] 3 A, --1.0 200 0 --60 --10 VDS= --10V 7 I D= 250 IT07523 yfs -- ID 10 300 °C 250 [Pch] 350 Ta=7 5 300 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Pch]] Ta=25°C 25°C --25°C RDS(on) -- VGS 500 td(off) 2 10 tf td(on) 7 5 100 7 5 Coss tr 3 Crss 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 Drain Current, ID -- A [Pch] --8 --7 3 2 Drain Current, ID -- A --6 --5 --4 --1 3 2 1 2 3 4 Total Gate Charge, Qg -- nC 5 6 IT03220 --20 --25 --30 IT03219 ASO [Pch] <10µs 10 0µ 1m ID= --2.5A DC m 0m s op s s 10 10 er 3 2 --2 0 --15 IDP= --10A --1.0 7 5 --0.1 7 5 --3 --10 2 --10 7 5 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --2.5A --9 Gate-to-Source Voltage, VGS -- V 0 IT03218 VGS -- Qg --10 5 ati on s 10 s Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT07525 No.7922-5/6 FW341 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 [Pch, Nch] Mounted on a ceramic board (2000mm2 ✕ 0.8mm) 1.7 1.5 1.4 To t al Di ss 1.0 11uu nniitt ip ati on 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07526 Note on usage : Since the FW341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.7922-6/6