SANYO SCH2615

SCH2615
Ordering number : ENA0380
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
SCH2615
General-Purpose Switching Device
Applications
Features
•
Composite type with two MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
15
--12
V
Gate-to-Source Voltage
VGSS
±10
±8
V
1.2
--0.9
A
4.8
--3.6
A
Drain Current (DC)
Allowable Power Dissipation
ID
IDP
PD
0.65
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=15V, VGS=0V
15
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=600mA
0.84
V
1
µA
±10
µA
1.3
V
Forward Transfer Admittance
VGS(off)
yfs
ID=600mA, VGS=4V
ID=300mA, VGS=2.5V
280
365
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
400
560
mΩ
RDS(on)3
ID=60mA, VGS=1.8V
630
950
mΩ
Marking : FQ
1.4
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62007PE TI IM TC-00000767 No. A0380-1/6
SCH2615
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
57
Output Capacitance
20
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
7.2
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9
ns
Rise Time
tr
td(off)
See specified Test Circuit.
16
ns
See specified Test Circuit.
11.5
ns
tf
Qg
See specified Test Circuit.
8
ns
VDS=10V, VGS=4V, ID=1.2A
1.15
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=1.2A
VDS=10V, VGS=4V, ID=1.2A
0.4
Gate-to-Drain “Miller” Charge
0.26
Diode Forward Voltage
VSD
IS=1.2A, VGS=0V
0.89
Turn-OFF Delay Time
Fall Time
Total Gate Charge
pF
nC
1.2
V
--10
µA
±10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--100µA
--0.3
Forward Transfer Admittance
yfs
RDS(on)1
VDS=--6V, ID=--500mA
0.6
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
--12
V
--1.0
1
V
S
ID=--500mA, VGS=--4.5V
ID=--300mA, VGS=--2.5V
470
615
690
970
mΩ
mΩ
920
1520
mΩ
Input Capacitance
Ciss
ID=--100mA, VGS=--1.8V
VDS=--6V, f=1MHz
Output Capacitance
Coss
VDS=--6V, f=1MHz
26.5
pF
Reverse Transfer Capacitance
Crss
VDS=--6V, f=1MHz
18
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8.2
ns
Rise Time
tr
td(off)
See specified Test Circuit.
3.5
ns
See specified Test Circuit.
9.5
ns
tf
Qg
See specified Test Circuit.
15.5
ns
VDS=--6V, VGS=--4.5V, ID=--0.9A
1.43
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--6V, VGS=--4.5V, ID=--0.9A
VDS=--6V, VGS=--4.5V, ID=--0.9A
0.31
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=--0.9A, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
92
pF
0.26
--0.98
nC
--1.5
V
Electrical Connection
unit : mm (typ)
7028-006
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Top view
1.6
0.2
1.5
2 3
0.5
0.56
1
0.25
0.05
1.6
0.05
0.2
6 5 4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : SCH6
No. A0380-2/6
SCH2615
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=10V
VIN
ID=600mA
RL=16.7Ω
VOUT
D
VIN
VIN
PW=10µs
D.C.≤1%
ID= --0.5A
RL=12Ω
G
G
P.G
ID -- VDS
--0.8
1.8V
8.0V
0.8
0.6
VGS=1.5V
0.4
8V
.
--1
V
--6.
0
Drain Current, ID -- A
--0.7
[Pch]
.5V
V
6.0V
ID -- VDS
--0.9
1.0
Drain Current, ID -- A
S
[Nch]
4.0V
3.0
V
2.5
V
1.2
SCH2615
50Ω
S
--2
SCH2615
50Ω
--4.
5
P.G
VOUT
D
VIN
V
PW=10µs
D.C.≤1%
0V
--4.5V
--3
.0
4V
0V
VDD= --6V
--0.6
--1.5V
--0.5
--0.4
--0.3
--0.2
VGS= --1.0V
0.2
--0.1
0
0
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
1000
[Pch]
--0.3
75
Gate-to-Source Voltage, VGS -- V
2.5
25
0
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage, VGS -- V
IT10901
[Nch]
--2.5
IT10902
RDS(on) -- VGS
2000
[Pch]
Ta=25°C
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--1.0
IT09195
Ta=
--25
°C
25° 7
C 5°C
75°
C
25°
C
25°C
°C
75
°C
Ta
=
--25
2.0
--0.9
--0.4
--0.1
1.5
--0.8
--0.5
0
1.0
--0.7
--0.6
--0.2
0
0.5
--0.6
ID -- VGS
--0.9
--0.7
0.4
0
--0.5
--0.8
0.6
0.2
--0.4
VDS= --6V
0.8
25
°C
Drain Current, ID -- A
1.0
--0.3
Drain-to-Source Voltage, VDS -- V
[Nch]
Ta=
--
VDS=10V
--0.2
IT10900
ID -- VGS
1.2
--0.1
0
1.0
°C --25
°C
0.6
°C
0.4
Ta
=
0.2
Drain Current, ID -- A
0
800
600mA
300mA
600
ID=60mA
400
200
1800
1600
1400
1200
ID= --100mA
--300mA
1000
--500mA
800
600
400
200
0
0
0
2
4
6
Gate-to-Source Voltage, VGS -- V
8
IT10903
0
--1
--2
--3
--4
--5
Gate-to-Source Voltage, VGS -- V
--6
IT09197
No. A0380-3/6
SCH2615
RDS(on) -- Ta
A
60m
,I =
1.8V D
=
VGS
600
00mA
3
, I D=
=2.5V
VGS
A
=600m
.0V, I D
V GS=4
400
200
--40
--20
0
20
60
80
100
120
140
IT10904
yfs -- ID
[Nch]
1.0
7
5
C
5°
-2
=-
3
Ta
2
°C
75
25
°C
0.1
7
5
3
2
3
5 7 0.01
2
3
5 7 0.1
2
3
IS -- VSD
600
400
200
--40
--20
0
20
40
60
80
100
120
140
160
IT09198
yfs -- ID
[Pch]
VDS= --6V
1.0
7
5
°C
25
°C
-25
=°C
a
T
75
3
2
0.1
7
5
3
2
0.01
--0.001
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
IT10906
Drain Current, ID -- A
[Nch]
IS -- VSD
3
2
[Pch]
VGS=0V
--1.0
7
5
Source Current, IS -- A
7
5
3
5°C
25°C
--25
°C
2
Ta=
7
0.1
7
3
2
--0.1
7
5
3
2
--0.01
7
5
5
3
3
2
2
0.01
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
IT10907
SW Time -- ID
[Nch]
3
--0.001
--0.25
7
5
tf
3
2
td(off)
td(on)
10
7
tr
5
3
7
0.1
2
3
5
7 1.0
IT10908
tf
1.0
7
5
tr
3
2
5
[Pch]
3
2
0.1
--0.01
Drain Current, ID -- A
--1.50
IT09200
td(on)
10
7
5
1.0
0.01
3
--1.25
VDD= --6.0V
VGS= --4.5V
td (off)
3
2
2
2
--1.00
SW Time -- ID
100
7
5
Switching Time, SW Time -- ns
100
--0.75
Diode Forward Voltage, VSD -- V
VDD=10V
VGS=4V
2
--0.50
--25°C
1.0
Source Current, IS -- A
A
--300m
,I =
--2.5V D
=
V GS
A
= --500m
4.5V, I D
V GS= --
800
2
VGS=0V
2
Switching Time, SW Time -- ns
=
VGS
1000
Ambient Temperature, Ta -- °C
5 7 1.0
IT10905
Drain Current, ID -- A
3
0mA
--10
, I D=
--1.8V
1200
25°C
2
1400
Ta=75
°C
0.01
0.001
1600
3
VDS=10V
[Pch]
1800
0
--60
160
Ambient Temperature, Ta -- °C
3
2
40
RDS(on) -- Ta
2000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
800
0
--60
Forward Transfer Admittance, yfs -- S
[Nch]
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1000
2
3
5
7
--0.1
2
Drain Current, ID -- A
3
5
7 --1.0
IT09201
No. A0380-4/6
SCH2615
Ciss, Coss, Crss -- VDS
100
[Nch]
Ciss, Coss, Crss -- VDS
3
[Pch]
f=1MHz
f=1MHz
2
7
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
Ciss
5
3
2
Coss
Crss
Ciss
100
7
5
3
Coss
2
Crss
10
7
10
7
5
0
3
6
12
IT10909
VGS -- Qg
[Nch]
3.0
2.5
2.0
1.5
1.0
0.5
--6
--8
--10
--12
IT09202
VGS -- Qg
[Pch]
VDS= --6.0V
ID= --0.9A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
10
7
5
0.2
0.4
0.6
0.8
1.0
Total Gate Charge, Qg -- nC
IT10910
ASO
[Nch]
IDP=4.8A
5 7 1.0
2
3
5 7 10
2
3
IT10911
Drain-to-Source Voltage, VDS -- V
PD -- Ta
[Nch, Pch]
0.8
--0.1
7
5
--0.01
--0.01
s
Operation in this
area is limited by RDS(on).
)
°C
3
2
2
2
0m
25
5 7 0.1
s
3
m
2
3
3
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
10
a=
(T
25
°C
)
100µs
10
0.01
0.01
(T
a=
ID= --0.9A
n
3
2
PW≤10µs
io
Operation in this
area is limited by RDS(on).
[Pch]
at
n
1.6
ASO
IDP= --3.6A
er
io
--1.0
7
5
1.4
IT09203
op
at
1.2
C
3
2
0.1
7
5
s
s
er
1.0
2
0m
op
0.8
3
1m
10
D
C
s
0.6
Total Gate Charge, Qg -- nC
D
1.0
7
5
m
PW≤10µs
10
0µ
s
0.4
s
10
ID=1.2A
7
5
0.2
1m
3
2
0
1.2
Drain Current, ID -- A
0
Drain Current, ID -- A
--4
--4.5
0
Allowable Power Dissipation, PD -- W
--2
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=1.2A
3.5
0
15
Drain-to-Source Voltage, VDS -- V
4.0
Gate-to-Source Voltage, VGS -- V
9
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
2 3
IT09204
Drain-to-Source Voltage, VDS -- V
0.7
M
0.65
ou
nt
0.6
0.5
ed
on
ac
er
am
ic
0.4
bo
ar
d(
90
0.3
0m
m2
✕0
.8
0.2
m
m
)1
un
0.1
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10912
No. A0380-5/6
SCH2615
Note on usage : Since the SCH2615 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0380-6/6