SCH2615 Ordering number : ENA0380 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs SCH2615 General-Purpose Switching Device Applications Features • Composite type with two MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 15 --12 V Gate-to-Source Voltage VGSS ±10 ±8 V 1.2 --0.9 A 4.8 --3.6 A Drain Current (DC) Allowable Power Dissipation ID IDP PD 0.65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=15V, VGS=0V 15 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=600mA 0.84 V 1 µA ±10 µA 1.3 V Forward Transfer Admittance VGS(off) yfs ID=600mA, VGS=4V ID=300mA, VGS=2.5V 280 365 mΩ Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 400 560 mΩ RDS(on)3 ID=60mA, VGS=1.8V 630 950 mΩ Marking : FQ 1.4 S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62007PE TI IM TC-00000767 No. A0380-1/6 SCH2615 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 57 Output Capacitance 20 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 7.2 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 16 ns See specified Test Circuit. 11.5 ns tf Qg See specified Test Circuit. 8 ns VDS=10V, VGS=4V, ID=1.2A 1.15 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=1.2A VDS=10V, VGS=4V, ID=1.2A 0.4 Gate-to-Drain “Miller” Charge 0.26 Diode Forward Voltage VSD IS=1.2A, VGS=0V 0.89 Turn-OFF Delay Time Fall Time Total Gate Charge pF nC 1.2 V --10 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±6.4V, VDS=0V VDS=--6V, ID=--100µA --0.3 Forward Transfer Admittance yfs RDS(on)1 VDS=--6V, ID=--500mA 0.6 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --12 V --1.0 1 V S ID=--500mA, VGS=--4.5V ID=--300mA, VGS=--2.5V 470 615 690 970 mΩ mΩ 920 1520 mΩ Input Capacitance Ciss ID=--100mA, VGS=--1.8V VDS=--6V, f=1MHz Output Capacitance Coss VDS=--6V, f=1MHz 26.5 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 18 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.2 ns Rise Time tr td(off) See specified Test Circuit. 3.5 ns See specified Test Circuit. 9.5 ns tf Qg See specified Test Circuit. 15.5 ns VDS=--6V, VGS=--4.5V, ID=--0.9A 1.43 nC Gate-to-Source Charge Qgs nC Qgd VDS=--6V, VGS=--4.5V, ID=--0.9A VDS=--6V, VGS=--4.5V, ID=--0.9A 0.31 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--0.9A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 92 pF 0.26 --0.98 nC --1.5 V Electrical Connection unit : mm (typ) 7028-006 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 1.6 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 No. A0380-2/6 SCH2615 Switching Time Test Circuit [N-channel] [P-channel] VDD=10V VIN ID=600mA RL=16.7Ω VOUT D VIN VIN PW=10µs D.C.≤1% ID= --0.5A RL=12Ω G G P.G ID -- VDS --0.8 1.8V 8.0V 0.8 0.6 VGS=1.5V 0.4 8V . --1 V --6. 0 Drain Current, ID -- A --0.7 [Pch] .5V V 6.0V ID -- VDS --0.9 1.0 Drain Current, ID -- A S [Nch] 4.0V 3.0 V 2.5 V 1.2 SCH2615 50Ω S --2 SCH2615 50Ω --4. 5 P.G VOUT D VIN V PW=10µs D.C.≤1% 0V --4.5V --3 .0 4V 0V VDD= --6V --0.6 --1.5V --0.5 --0.4 --0.3 --0.2 VGS= --1.0V 0.2 --0.1 0 0 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 1000 [Pch] --0.3 75 Gate-to-Source Voltage, VGS -- V 2.5 25 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V IT10901 [Nch] --2.5 IT10902 RDS(on) -- VGS 2000 [Pch] Ta=25°C Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 IT09195 Ta= --25 °C 25° 7 C 5°C 75° C 25° C 25°C °C 75 °C Ta = --25 2.0 --0.9 --0.4 --0.1 1.5 --0.8 --0.5 0 1.0 --0.7 --0.6 --0.2 0 0.5 --0.6 ID -- VGS --0.9 --0.7 0.4 0 --0.5 --0.8 0.6 0.2 --0.4 VDS= --6V 0.8 25 °C Drain Current, ID -- A 1.0 --0.3 Drain-to-Source Voltage, VDS -- V [Nch] Ta= -- VDS=10V --0.2 IT10900 ID -- VGS 1.2 --0.1 0 1.0 °C --25 °C 0.6 °C 0.4 Ta = 0.2 Drain Current, ID -- A 0 800 600mA 300mA 600 ID=60mA 400 200 1800 1600 1400 1200 ID= --100mA --300mA 1000 --500mA 800 600 400 200 0 0 0 2 4 6 Gate-to-Source Voltage, VGS -- V 8 IT10903 0 --1 --2 --3 --4 --5 Gate-to-Source Voltage, VGS -- V --6 IT09197 No. A0380-3/6 SCH2615 RDS(on) -- Ta A 60m ,I = 1.8V D = VGS 600 00mA 3 , I D= =2.5V VGS A =600m .0V, I D V GS=4 400 200 --40 --20 0 20 60 80 100 120 140 IT10904 yfs -- ID [Nch] 1.0 7 5 C 5° -2 =- 3 Ta 2 °C 75 25 °C 0.1 7 5 3 2 3 5 7 0.01 2 3 5 7 0.1 2 3 IS -- VSD 600 400 200 --40 --20 0 20 40 60 80 100 120 140 160 IT09198 yfs -- ID [Pch] VDS= --6V 1.0 7 5 °C 25 °C -25 =°C a T 75 3 2 0.1 7 5 3 2 0.01 --0.001 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 IT10906 Drain Current, ID -- A [Nch] IS -- VSD 3 2 [Pch] VGS=0V --1.0 7 5 Source Current, IS -- A 7 5 3 5°C 25°C --25 °C 2 Ta= 7 0.1 7 3 2 --0.1 7 5 3 2 --0.01 7 5 5 3 3 2 2 0.01 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT10907 SW Time -- ID [Nch] 3 --0.001 --0.25 7 5 tf 3 2 td(off) td(on) 10 7 tr 5 3 7 0.1 2 3 5 7 1.0 IT10908 tf 1.0 7 5 tr 3 2 5 [Pch] 3 2 0.1 --0.01 Drain Current, ID -- A --1.50 IT09200 td(on) 10 7 5 1.0 0.01 3 --1.25 VDD= --6.0V VGS= --4.5V td (off) 3 2 2 2 --1.00 SW Time -- ID 100 7 5 Switching Time, SW Time -- ns 100 --0.75 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V 2 --0.50 --25°C 1.0 Source Current, IS -- A A --300m ,I = --2.5V D = V GS A = --500m 4.5V, I D V GS= -- 800 2 VGS=0V 2 Switching Time, SW Time -- ns = VGS 1000 Ambient Temperature, Ta -- °C 5 7 1.0 IT10905 Drain Current, ID -- A 3 0mA --10 , I D= --1.8V 1200 25°C 2 1400 Ta=75 °C 0.01 0.001 1600 3 VDS=10V [Pch] 1800 0 --60 160 Ambient Temperature, Ta -- °C 3 2 40 RDS(on) -- Ta 2000 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 800 0 --60 Forward Transfer Admittance, yfs -- S [Nch] Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1000 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 --1.0 IT09201 No. A0380-4/6 SCH2615 Ciss, Coss, Crss -- VDS 100 [Nch] Ciss, Coss, Crss -- VDS 3 [Pch] f=1MHz f=1MHz 2 7 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF Ciss 5 3 2 Coss Crss Ciss 100 7 5 3 Coss 2 Crss 10 7 10 7 5 0 3 6 12 IT10909 VGS -- Qg [Nch] 3.0 2.5 2.0 1.5 1.0 0.5 --6 --8 --10 --12 IT09202 VGS -- Qg [Pch] VDS= --6.0V ID= --0.9A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 10 7 5 0.2 0.4 0.6 0.8 1.0 Total Gate Charge, Qg -- nC IT10910 ASO [Nch] IDP=4.8A 5 7 1.0 2 3 5 7 10 2 3 IT10911 Drain-to-Source Voltage, VDS -- V PD -- Ta [Nch, Pch] 0.8 --0.1 7 5 --0.01 --0.01 s Operation in this area is limited by RDS(on). ) °C 3 2 2 2 0m 25 5 7 0.1 s 3 m 2 3 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 10 a= (T 25 °C ) 100µs 10 0.01 0.01 (T a= ID= --0.9A n 3 2 PW≤10µs io Operation in this area is limited by RDS(on). [Pch] at n 1.6 ASO IDP= --3.6A er io --1.0 7 5 1.4 IT09203 op at 1.2 C 3 2 0.1 7 5 s s er 1.0 2 0m op 0.8 3 1m 10 D C s 0.6 Total Gate Charge, Qg -- nC D 1.0 7 5 m PW≤10µs 10 0µ s 0.4 s 10 ID=1.2A 7 5 0.2 1m 3 2 0 1.2 Drain Current, ID -- A 0 Drain Current, ID -- A --4 --4.5 0 Allowable Power Dissipation, PD -- W --2 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.2A 3.5 0 15 Drain-to-Source Voltage, VDS -- V 4.0 Gate-to-Source Voltage, VGS -- V 9 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT09204 Drain-to-Source Voltage, VDS -- V 0.7 M 0.65 ou nt 0.6 0.5 ed on ac er am ic 0.4 bo ar d( 90 0.3 0m m2 ✕0 .8 0.2 m m )1 un 0.1 it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10912 No. A0380-5/6 SCH2615 Note on usage : Since the SCH2615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0380-6/6