SKM 100GB125DN ( 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-++ 6 *++ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -++ % D E+ BBB F *4+ 5$ *-4 5$ E+++ 6 6;2 SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN 6$$ 3 ++ 6= 6;2 > -+ 6= 6$2 ? *-++ 6 Units ( 3 -4 5$ $1:3- $ $1: Values Inverse Diode (7 3 *4+ 5$ ! !1:3- ! !1: 3 *+ = B !: (7 3 *4+ 5$ Module )1:, (#7 ( Features ! " # $% &$' & $ ' ( )*+ , )-+ , Typical Applications . -+ /0 1 # *++ /0 # 2 . -+ /0 6 %$ * B ( 3 -4 5$ Characteristics Symbol Conditions IGBT 6;2), $2 6;2 3 6$2 $ min. 3 - % 6;2 3 + 6 6$2 3 6$2 6$2+ E4 (7 3 -4 5$ typ. max. 44 4 6 +*4 +E4 % (7 3 *-4 5$ % (7 3 -4 5$ 6 (7 3 *-4 5$ $2 6;2 3 *4 6 6 (7 3 -45$ G (7 3 *-45$ 6$2), $ $ $ 3 C4 % 6;2 3 *4 6 6$2 3 -4 6;2 3 + 6 6;2 3 + D F-+6 1; (7 3 5$ ), 2 ), 1; 3 9 G 1; 3 9 G 2 1)7D, ;'( G (7 3 5$ #B HH H94 6 3 * :0 4 +C- +A ! ! +H9 +4 ! $ I; Units 4+ 6$$ 3 ++6 $3 C4% (7 3 *-4 5$ 6;2 3 < *46 $ 4 J 9+ E+ A H+ -+ K H4 K +*9 LMN GB 1 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Characteristics Symbol Conditions Inverse Diode 6! 3 62$ ! Ultra Fast IGBT Module typ. max. Units (7 3 -4 5$ #B - -4 6 (7 3 *-4 5$ #B *9 6!+ (7 3 5$ ** *- 6 ! (7 3 5$ *- *CH G I ! 3 C4 % M 3 9++ %M@ 2 6;2 3 + 6= 6$$ 3 ++ 6 1)7D,& 11: SEMITRANS® 2N 3 C4 %= 6;2 3 + 6 min. (7 3 *-4 5$ 4+ **4 +4 -+ B D SKM 100GB125DN 1)D, : / : : :4 LMN Module 1$$OF22O ! " # $% &$' & $ ' ( )*+ , )-+ , % @$ K $2 Features 6 -4 ( 3 -4 5$ +C4 G ( 3 *-4 5$ * G ++4 LMN H 4 -4 4 *+ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications . -+ /0 1 # *++ /0 # 2 . -+ /0 GB 2 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN SEMITRANS® 2N Zth Symbol Zth(j-c)l Conditions Values Units 1 1 1 1 3* 33H 3E 3* 33H A4 4 *C4 -4 ++H-C +++9 +++*C /MN /MN /MN /MN 3E +++9 1 1 1 1 3* 33H 3E 3* 33H H++ *+ H E ++4E +++* +++*4 /MN /MN /MN /MN 3E +* Zth(j-c)D Ultra Fast IGBT Module SKM 100GB125DN Features ! " # $% &$' & $ ' ( )*+ , )-+ , Typical Applications . -+ /0 1 # *++ /0 # 2 . -+ /0 GB 3 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN UL Recognized File 63 532 $ & AH ;' 6 $ & AH 21-05-2007 RAA © by SEMIKRON