SKM 400GB126D ...
() * %
Absolute Maximum Ratings
Symbol Conditions
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SKM 400GAL126D
Freewheeling Diode
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Preliminary Data
! " #
Typical Applications
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SKM 400GB126D
Features
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Module
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Characteristics
Symbol Conditions
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SEMITRANS® 3
Values
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HIJ
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
Characteristics
Symbol Conditions
Inverse Diode
; #;
2.. $7 5 . ;.
;
®
SEMITRANS 3
Trench IGBT Module
#334
D
#;
2.. $
%I% !2.. $I:
5 ?-) 7 !.. 3=+?>K
%%
min.
typ.
max.
Units
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00
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HIJ
Freewheeling Diode
SKM 400GB126D
; SKM 400GAL126D
;.
Preliminary Data
;
Features
! " #
Typical Applications
$ %
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
3
3
3
3
(
2
/
(
2
))
(2!
./
. .2A2
. .-0. ..(
NIJ
NIJ
NIJ
NIJ
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3
3
3
3
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(
. .(!(
. ./-0
. ..-(
NIJ
NIJ
NIJ
NIJ
/
. ..-
Zth(j-c)D
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Preliminary Data
Features
! " #
Typical Applications
$ %
&'
%
GB
3
GAL
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
11-09-2006 SEN
© by SEMIKRON
SKM 400GB126D ...
UL Recognized
File 63 532
K )!
5G
6
K )!
5$L
K )0 =P K )!>
11-09-2006 SEN
© by SEMIKRON