SEMIKRON SKM400GB125D_07

SKM 400GB125D
' 3 ,4 5# Absolute Maximum Ratings
Symbol Conditions
IGBT
6#2
'7 3 ,4 5#
#
'7 3 )4- 5#
),--
6
9--
$
' 3 :- 5#
*--
$
--
$
= ,-
6
)-
A
' 3 ,4 5#
*B-
$
' 3 :- 5#
,-
$
--
$
'7 3 )4- 5#
,::-
$
' 3 ,4 5#
*B-
$
' 3 :- 5#
,-
$
--
$
,::-
$
4--
$
'"7
D 9-CCCE )4-
5#
'
D 9-CCCE ),4
5#
9---
6
#1;3,#
6<2
Ultra Fast IGBT Modules
6## 3 -- 6> 6<2 ? ,- 6>
6#2 @ ),-- 6
'7 3 )4- 5#
1;
;
3 )- > C
SKM 400GAL125D
Freewheeling Diode
SKM 400GAR125D
'7 3 )4- 5#
1;
;
3 )- > C
! " #$ %&# % # &
'
()* + (,- +
Typical Applications
.,-/0
1 " )-- /0
" 2 . ,- /0
'7 3 ),4 5#
Inverse Diode
SKM 400GB125D
Features
1;3, 1;3,
'7 3 )4- 5#
Module
(1;+
6
$# ) C
' 3 ,4 5# Characteristics
Symbol Conditions
IGBT
6<2(+
6<2 3 6#2 # 3 ), $
#2
6<2 3 - 6 6#2 3 6#2
6#2#2
6#2(+
6<2 3 )4 6
'7 3 ,4 5#
Units
94
44
4
6
-)4
-94
$
)9
6
'7 3 ,45#
*
G
'7 3 ),45#
F
G
3 ) ;0
6
**
*:4
9
944
6
,,
**
*9
),
)
6
H<
6<2 3 -6 D E,-6
,4-
#
1<
'7 3 5#
),4
I
F4)F
4-*,
J
):
J
(+
2
(+
1< 3 , G
1< 3 , G
2
1(7D+
1
max.
)F
#
GAL
typ.
'7 3 ),4 5#
# 3 *-- $ 6<2 3 )4 6 '7 3 ,45#"C
6#2 3 ,4 6<2 3 - 6
min.
'7 3 ,4 5#
'7 3 ),45#"C
#
#
GB
Units
' 3 ,4 5#
#1;
SEMITRANS® 3
Values
<&'
6## 3 --6
#3 *--$
'7 3 ),4 5#
6<2 3 =)46
--4
KLM
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Characteristics
Symbol Conditions
Inverse Diode
6 3 62#
6
3 *-- $> 6<2 3 - 6
-
min.
typ.
max.
Units
'7 3 ,4 5#"C
,
,4
6
'7 3 ),4 5#"C
):
'7 3 ,4 5#
))
6
),
'7 3 ),4 5#
6
'7 3 ,4 5#
*
9*
'7 3 ),4 5#
®
SEMITRANS 3
Ultra Fast IGBT Modules
11;
H
3 *-- $
L
3 :*-- $LA
2
6<2 3 - 6> 6## 3 -- 6
1(7D+%
6
G
G
'7 3 ),4 5#
*494
$
A#
)
J
-),4
KLM
,4
6
Freewheeling Diode
6 3 62#
SKM 400GB125D
6
SKM 400GAL125D
3 *-- $> 6<2 3 - 6
-
'7 3 ,4 5#"C
,
'7 3 ),4 5#"C
):
'7 3 ,4 5#
))
),
*
9*
6
'7 3 ),4 5#
SKM 400GAR125D
6
'7 3 ,4 5#
'7 3 ),4 5#
Features
! " #$ %&# % # &
'
()* + (,- +
11;
H
3 *-- $
L
3 :*-- $LA
2
6<2 3 - 6> 6## 3 -- 6
1(7D+
%
6
6
6
'7 3 ),4 5#
*494
$
A#
)
J
-),4
KLM
Module
#2
1##NE22N
)4
C D
1(D+
;
/ ;
;
;
,-
'3 ,4 5#
-*4
G
'3 ),4 5#
-4
G
--*:
KLM
*
4
O
,4
4
O
*,4
Typical Applications
.,-/0
1 " )-- /0 This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
" 2 . ,- /0
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
1
1
1
1
3)
3,
3*
39
3)
3,
3*
*
)-4
*
-4
--F99
---F:
---)
/LM
/LM
/LM
/LM
39
----,
SKM 400GAL125D
1
1
1
1
3)
3,
3*
39
3)
3,
3*
F4
*:
)-
)9
--*:
--,-)
---)
/LM
/LM
/LM
/LM
SKM 400GAR125D
39
---*
SEMITRANS® 3
Zth(j-c)D
Ultra Fast IGBT Modules
SKM 400GB125D
Features
! " #$ %&# % # &
'
()* + (,- +
Typical Applications
.,-/0
1 " )-- /0
" 2 . ,- /0
GB
3
GAL
GAR
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
27-06-2007 SCH
© by SEMIKRON
SKM 400GB125D
UL Recognized
File 63 532
# % 4
<&
6
# % 4
<$
# % 4F (P % 4+
27-06-2007 SCH
<$1
# % 4: (P % 4 +
© by SEMIKRON