SKM 400GB125D ' 3 ,4 5# Absolute Maximum Ratings Symbol Conditions IGBT 6#2 '7 3 ,4 5# # '7 3 )4- 5# ),-- 6 9-- $ ' 3 :- 5# *-- $ -- $ = ,- 6 )- A ' 3 ,4 5# *B- $ ' 3 :- 5# ,- $ -- $ '7 3 )4- 5# ,::- $ ' 3 ,4 5# *B- $ ' 3 :- 5# ,- $ -- $ ,::- $ 4-- $ '"7 D 9-CCCE )4- 5# ' D 9-CCCE ),4 5# 9--- 6 #1;3,# 6<2 Ultra Fast IGBT Modules 6## 3 -- 6> 6<2 ? ,- 6> 6#2 @ ),-- 6 '7 3 )4- 5# 1; ; 3 )- > C SKM 400GAL125D Freewheeling Diode SKM 400GAR125D '7 3 )4- 5# 1; ; 3 )- > C ! " #$ %&# % # & ' ()* + (,- + Typical Applications .,-/0 1 " )-- /0 " 2 . ,- /0 '7 3 ),4 5# Inverse Diode SKM 400GB125D Features 1;3, 1;3, '7 3 )4- 5# Module (1;+ 6 $# ) C ' 3 ,4 5# Characteristics Symbol Conditions IGBT 6<2(+ 6<2 3 6#2 # 3 ), $ #2 6<2 3 - 6 6#2 3 6#2 6#2#2 6#2(+ 6<2 3 )4 6 '7 3 ,4 5# Units 94 44 4 6 -)4 -94 $ )9 6 '7 3 ,45# * G '7 3 ),45# F G 3 ) ;0 6 ** *:4 9 944 6 ,, ** *9 ), ) 6 H< 6<2 3 -6 D E,-6 ,4- # 1< '7 3 5# ),4 I F4)F 4-*, J ): J (+ 2 (+ 1< 3 , G 1< 3 , G 2 1(7D+ 1 max. )F # GAL typ. '7 3 ),4 5# # 3 *-- $ 6<2 3 )4 6 '7 3 ,45#"C 6#2 3 ,4 6<2 3 - 6 min. '7 3 ,4 5# '7 3 ),45#"C # # GB Units ' 3 ,4 5# #1; SEMITRANS® 3 Values <&' 6## 3 --6 #3 *--$ '7 3 ),4 5# 6<2 3 =)46 --4 KLM GAR 27-06-2007 SCH © by SEMIKRON SKM 400GB125D Characteristics Symbol Conditions Inverse Diode 6 3 62# 6 3 *-- $> 6<2 3 - 6 - min. typ. max. Units '7 3 ,4 5#"C , ,4 6 '7 3 ),4 5#"C ): '7 3 ,4 5# )) 6 ), '7 3 ),4 5# 6 '7 3 ,4 5# * 9* '7 3 ),4 5# ® SEMITRANS 3 Ultra Fast IGBT Modules 11; H 3 *-- $ L 3 :*-- $LA 2 6<2 3 - 6> 6## 3 -- 6 1(7D+% 6 G G '7 3 ),4 5# *494 $ A# ) J -),4 KLM ,4 6 Freewheeling Diode 6 3 62# SKM 400GB125D 6 SKM 400GAL125D 3 *-- $> 6<2 3 - 6 - '7 3 ,4 5#"C , '7 3 ),4 5#"C ): '7 3 ,4 5# )) ), * 9* 6 '7 3 ),4 5# SKM 400GAR125D 6 '7 3 ,4 5# '7 3 ),4 5# Features ! " #$ %&# % # & ' ()* + (,- + 11; H 3 *-- $ L 3 :*-- $LA 2 6<2 3 - 6> 6## 3 -- 6 1(7D+ % 6 6 6 '7 3 ),4 5# *494 $ A# ) J -),4 KLM Module #2 1##NE22N )4 C D 1(D+ ; / ; ; ; ,- '3 ,4 5# -*4 G '3 ),4 5# -4 G --*: KLM * 4 O ,4 4 O *,4 Typical Applications .,-/0 1 " )-- /0 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. " 2 . ,- /0 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 GAL GAR 27-06-2007 SCH © by SEMIKRON SKM 400GB125D Zth Symbol Zth(j-c)l Conditions Values Units 1 1 1 1 3) 3, 3* 39 3) 3, 3* * )-4 * -4 --F99 ---F: ---) /LM /LM /LM /LM 39 ----, SKM 400GAL125D 1 1 1 1 3) 3, 3* 39 3) 3, 3* F4 *: )- )9 --*: --,-) ---) /LM /LM /LM /LM SKM 400GAR125D 39 ---* SEMITRANS® 3 Zth(j-c)D Ultra Fast IGBT Modules SKM 400GB125D Features ! " #$ %&# % # & ' ()* + (,- + Typical Applications .,-/0 1 " )-- /0 " 2 . ,- /0 GB 3 GAL GAR 27-06-2007 SCH © by SEMIKRON SKM 400GB125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 27-06-2007 SCH © by SEMIKRON SKM 400GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 27-06-2007 SCH © by SEMIKRON SKM 400GB125D UL Recognized File 63 532 # % 4 <& 6 # % 4 <$ # % 4F (P % 4+ 27-06-2007 SCH <$1 # % 4: (P % 4 + © by SEMIKRON