BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING Figure 1: Package APPLICATION n HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 3 2 DESCRIPTION The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive environment as electronic ignition power actuators. 2 1 TO-218 1 ISOWATT218 Figure 2: Internal Schematic Diagram Table 1: Order Code Part Number Marking Package Packaging BU941ZP BU941ZP TO-218 TUBE BU941ZFI BU941ZPFI ISOWATT218 TUBE February 2005 Rev. 6 1/9 BU941ZP BU941ZPFI Table 2: Absolute Maximum Ratings Symbol Value Parameter BU941ZP Unit BU941ZPFI Unit VCEO Collector-Emitter Voltage (IB= 0) VEBO Emitter-Base Voltage (IC= 0) 5 V Collector Current 15 A Collector Peak Current (tp < 5ms) 30 A Base Current 1 A 5 A IC ICM IB IBM 350 Base Peak Current (tp < 5 ms) o Ptot Total Dissipation at TC = 25 C Visol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Tstg Storage Temperature TJ Max. Operating Junction Temperature V 155 65 W 2500 V -65 to 175 -65 to 175 °C 175 175 °C TO-218 ISOWATT218 Unit 0.97 2.3 oC/W Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICEO IEBO Parameter Collector Cut-off Current Test Conditions Min. Typ. VCE = 300 V (IB = 0) VCE = 300 V Emitter Cut-off Current VEB = 5 V o Tj = 125 C Max. Unit 100 µA 0.5 mA 20 mA (IC = 0 ) VCL* Clamping Voltage 500 V IC = 8 A IB =100 mA 1.8 V IC = 10 A IB = 250 mA 1.8 V IC = 12 A IB = 300 mA 2 V IC = 8 A IB =100 mA 2.2 V IC = 10 A IB = 250 mA 2.5 V IC = 12 A IB = 300 mA 2.7 V DC Current Gain IC = 5 A VCE = 10 V 300 Functional Test VCC = 24 V L = 7 mH 10 INDUCTIVE LOAD (see fig. 12) VCC = 12 V L = 7 mH ts Storage Time VBE(off) = 0 V RBE =47 W 15 µs tf Fall Time VClamp = 300 V IC = 7 A 0.5 µs IB = 70 mA (see fig. 14) VCE(sat)* Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage hFE* IC = 100 mA Diode Forward Voltage IF = 10 V * Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %. VF 2/9 350 A 2.5 V BU941ZP BU941ZPFI Figure 3: Safe Operating Area Figure 6: Derating Curves Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Collector-Emitter Saturation Voltage 3/9 BU941ZP BU941ZPFI Figure 9: Base-Emitter Saturation Voltage Figure 10: Collector-Emitter Saturation Voltage 4/9 Figure 11: Base-Emitter Saturation Voltage BU941ZP BU941ZPFI Figure 12: Functional Test Circuit Figure 13: Functional Test Waveforms Figure 14: Switching Time Test Circuit 5/9 BU941ZP BU941ZPFI TO-218 (SOT-93) MECHANICAL DATA DIM. A MIN. 4.70 C 1.17 D mm. TYP MAX. 4.90 1.37 2.50 D1 1.27 E 0.50 F F3 1.10 0.78 1.30 1.75 F4 2.10 G 10.80 11.10 H 14.70 15.20 H1 10.00 L 12.20 L2 16.20 L3 18.00 L4 L5 2.40 3.95 L6 Dia 4.15 31.00 4.00 4.10 0016087 D 6/9 BU941ZP BU941ZPFI ISOWATT218 (option “B”) MECHANICAL DATA DIM. A B C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R Dia MIN. 5.35 mm. TYP MAX. 5.65 2.5 3.30 2.90 1.88 0.75 0.75 1.50 1.90 3.80 3.10 2.08 0.95 0.95 1.85 2.20 1.10 11.20 16.20 10.80 15.80 9 20.80 19.10 22.80 40.50 4.85 20.25 2.0 21.20 19.90 23.60 42.50 5.25 20.75 2.40 4.6 3.50 3.70 0016093B n 7/9 BU941ZP BU941ZPFI Table 5: Revision History 8/9 Date Release 22-Apr-2002 09-Sep-2004 03-Feb-2005 4 5 6 Change Designator Fourth Release Fifth Release Mechanical Data has been updated BU941ZP BU941ZPFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9