STMICROELECTRONICS BUV42

BUV42
SILICON NPN SWITCHING TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE
FAST SWITCHING TIMES
LOW SWITCHING LOSSES
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN FOR REDUCED LOAD
OPERATION
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
V
V CEV
Collector-emitter Voltage (VBE = -1.5V)
350
V CEO
Collector-emitter Voltage (IB = 0)
250
V
V EBO
Emitter-Base Voltage (IC = 0)
7
V
Collector Current
12
A
Collector Peak Current
18
A
IB
Base Current
2.5
A
I BM
Base Peak Current
4
A
1
A
P tot
Reverse Bias Base Dissipation
(B. E. junction in avalanche)
o
T otal Dissipation at Tc ase ≤ 25 C
T s tg
Storage Temperature
IC
I CM
P Bas e
Tj
Max Operating Junction Temperature
October 1995
120
W
-65 to 200
o
C
200
o
C
1/5
BUV42
THERMAL DATA
R thj -ca se
Thermal Resistance Junction-case
Max
o
1.46
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
I CER
Collector Cut-off
Current (R BE = 10Ω)
V CE = V CEV
V CE = V CEV
I CEV
Collector Cut-off
Current
V CE = V CEV
V CE = V CEV
I EBO
Emitter Cut- off
Current (I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
V EB0
V CE(sat) ∗
V BE(sat )∗
di c /dt ∗
V CE(2µs )
V CE(4µs )
T yp.
Tc = 100o C
V BE = -1.5V
o
V BE = - 1.5V T C=100 C
Max.
Unit
0.5
2.5
mA
mA
0.5
2
mA
mA
1
mA
I C = 0.2A
L = 25 mH
250
V
Emitter-base
Voltage (Ic = 0)
I E = 50 mA
7
V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IC
IC
=
=
=
=
=
=
2A
4A
6A
2A
4A
6A
IB
IB
IB
IB
IB
IB
=
=
=
=
=
=
0.13A
0.4A
0.75A
0.13A
0.4A
0.75A
IC
IC
IC
IC
=
=
=
=
4A
6A
4A
6A
IB
IB
IB
IB
=
=
=
=
0.4A
0.75A
0.4A
0.75A
Base-Emitter
Saturation Voltage
RC = 0
o
0.25
0.4
0.5
0.25
0.45
0.6
0.8
0.9
1.2
0.9
1.2
1.5
V
V
V
V
V
V
o
1
1.1
0.9
1.1
1.3
1.5
1.3
1.5
V
V
V
V
T j = 100 C
o
Tj = 100 C
o
T j = 100 C
Tj = 100 C
T j = 100 o C
Rated of Rise of
on-state Collector
Current
V CC = 200V
Collector Emitter
Dynamic Voltage
V CC = 200V
R C = 50Ω
I B1 = 0.4A
Tj = 25o C
o
T j = 100 C
1.7
2.5
2.5
4
V
V
Collector Emitter
Dynamic Voltage
VCC = 200V
R C = 50Ω
I B1 = 0.4A
T j = 25 oC
o
T j = 100 C
0.9
1.1
1.7
2
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
2/5
Min .
IB1 = 0.6A
o
T j = 25 C
T j = 100 o C
25
20
40
35
A/µs
A/µs
BUV42
ELECTRICAL CHARACTERISTICS (continued)
Symbo l
tr
ts
tf
Parameter
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
T est Con ditio ns
Min .
T yp.
Max.
Unit
V CC = 200V
V BB = -5V
R B2 = 3.3Ω
I C = 6A
IB1 = 0.75A
T p = 30µs
0.3
1
0.15
0.4
1.6
0.3
µs
µs
µs
ts
tf
tt
tc
INDUCT IVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V CC = 200V
I CC = 4A
V BB = -5V
LC = 2.5mH
V c la mp = 250V
IB = 0.4A
R B2 = 6.3Ω
1.2
0.08
0.03
0.15
1.8
0.2
0.12
0.35
µs
µs
µs
µs
ts
tf
tt
tc
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC = 200V
I CC = 4A
V BB = -5V
LC = 2.5mH
Vc la mp = 250V
IB = 0.4A
R B2 = 6.3Ω
T j = 100o C
1.8
0.2
0.08
0.4
2.4
0.4
0.2
0.7
µs
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
V CC = 200V
I CC = 4A
V BB = 0
L C = 2.5mH
V c la mp = 250V
IB = 0.5A
R B2 = 7.5Ω
2.5
0.4
0.15
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
V CC = 200V
I CC = 4A
V BB = 0
L C = 2.5mH
V c la mp = 250V
IB = 0.4A
R B2 = 7.5Ω
T j = 100o C
4.8
0.7
0.4
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
3/5
BUV42
TO-3 (H) MECHANICAL DATA
mm
DIM.
MIN.
A
inch
TYP.
MAX.
MIN.
TYP.
11.7
B
MAX.
0.460
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9
0.429
N
16.9
0.665
P
26.2
R
3.88
1.031
4.09
U
0.152
39.50
V
1.555
30.10
1.185
A
P
D
C
O
N
B
V
E
G
U
0.161
R
P003N
4/5
BUV42
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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