STMICROELECTRONICS BUH313

BUH313
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
■
■
■
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV
■ SWITCH MODE POWER SUPPLIES
3
2
1
ISOWATT218
DESCRIPTION
The BUH313 is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
1300
V
Collector-Emitter Voltage (I B = 0)
600
V
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
5
A
V CBO
Collector-Base Voltage (IE = 0)
V CEO
V EBO
IC
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
3
A
I BM
Base Peak Current (t p < 5 ms)
5
A
I CM
o
P tot
T otal Dissipation at T c = 25 C
T s tg
Storage Temperature
Tj
June 1996
Max. O perating Junction Temperature
44
W
-65 to 150
o
C
150
o
C
1/7
BUH313
THERMAL DATA
R thj -ca se
Thermal Resistance Junction-case
Max
o
2.8
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Unit
1
2
mA
mA
100
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1300 V
V CE = 1300 V
I EBO
Emitter Cut- off Current
(I C = 0)
V EB = 5 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 3 A
I B = 0.75 A
1.5
V
V BE(sat )∗
Base-Emitter
Saturation Voltage
IC = 3 A
I B = 0.75 A
1.3
V
DC Current Gain
IC = 3 A
IC = 3 A
V CE = 5 V
V CE = 5 V
2.4
200
µs
ns
VCEO(s us)
V EBO
h FE∗
Tj = 125 o C
o
T j = 100 C
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
V CC = 400 V
I B1 = 0.75 A
ts
tf
INDUCT IVE LOAD
Storage Time
Fall Time
IC = 3 A
I B1 = 0.75 A
f = 15625 Hz
IB2 = -1.5 A
π

V cef ly back = 1050 sin  106 t V
5


ts
tf
INDUCT IVE LOAD
Storage Time
Fall Time
IC = 3 A
I B1 = 0.75 A
600
V
10
V
5.5
3.5
IC = 3 A
IB2 = 1.5 A
f = 31250 Hz
IB2 = -1.5 A
 π 6
V cef ly back = 1200 sin  10  t V
5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/7
Thermal Impedance
1.6
110
3.5
340
µs
ns
3.5
270
µs
ns
BUH313
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
(see figure 2)
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BUH313
Power Losses at 32 KHz
Switching Time Inductive Load at 32 KHz
(see figure 2)
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and t f as a
function of IB2 at both 16 KHz, 32 KHz and
64KHz scanning frequencies for choosing the
optimum negative drive. The test circuit is
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illustrated in figure 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
1
1
L (IC)2 = C (VCEfly)2
ω = 2 πf =
2
L C
2

√
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUH313
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH313
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
5.35
TYP.
5.65
0.210
TYP.
MAX.
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.45
1
0.017
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
U
4.6
0.090
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1
2
3
L1
L4
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P025C
BUH313
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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