SGSIF344 SGSIF444 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ SGSIF344 IS SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. These transistors are available in ISOWATT220 and ISOWATT218 plastic package respectively. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 3 3 1 2 2 1 ISOWATT220 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e SGSIF344 V CES V CEO VEBO IC I CM IB I BM P tot Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at Tc = 25 C T s tg Tj Storage Temperature Max. Operating Junction T emperature June 1997 Un it SGSIF 444 1200 600 7 7 12 5 8 40 50 -65 to 150 150 V V V A A A A W o o C C 1/7 SGSIF344 / SGSIF444 THERMAL DATA ISOW AT T220 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 3.12 2.5 o C/W o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 1200 V 200 µA I CEO Collector Cut-off Current (IB = 0) V EC = 380 V V EC = 600 V 200 2 µA mA I EBO Emitter Cut-off Current (I C = 0) V BE = 7 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage Test Cond ition s I C = 100 mA Min. Typ . 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 3.5 A I C = 2.5 A IB = 0.7 A IB = 0.35 A 1.5 1.5 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 3.5 A I C = 2.5 A IB = 0.7 A IB = 0.35 A 1.5 1.5 V V t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 3.5 A v CC = 250 v I B1 = 0.7 A I B1 = -1.4 A 0.7 2.2 0.18 1.2 3.5 0.4 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 3.5 A v CC = 250 v I B1 = -1.4 A I B1 = 0.7 A With Antisaturation Network 0.7 1.5 0.2 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 3.5 A V CC = 250 V V BE (off) = - 5 V I B1 = 0.7 A 0.7 1 0.2 µs µs µs ts tf Storage Time Fall T ime INDUCTIVE LOAD hFE = 5 I C = 3.5 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 1.2 Ω 1.4 0.1 ts tf Storage Time Fall T ime INDUCTIVE LOAD hFE = 5 I C = 3.5 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 1.2 Ω T c = 100 oC ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 2.8 0.2 µs µs 4 0.3 µs µs SGSIF344 / SGSIF444 Safe Operating Area Reverse Biased SOA Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 SGSIF344 / SGSIF444 Resistive Load Switching Times Switching Times Percentance Variation 4/7 Inductive Load Switching Times SGSIF344 / SGSIF444 ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 P011G 5/7 SGSIF344 / SGSIF444 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 U 4.6 0.090 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 6/7 SGSIF344 / SGSIF444 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7