STMICROELECTRONICS SGSIF344

SGSIF344
SGSIF444
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
SGSIF344 IS SGS-THOMSON PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
HORIZONTAL DEFLECTION FOR COLOUR
TVS AND MONITORS
DESCRIPTION
The SGSIF344 and SGSIF444 are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and uses a
Hollow Emitter structure to enhance switching
speeds.
These transistors are available in ISOWATT220
and ISOWATT218 plastic package respectively.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
3
3
1
2
2
1
ISOWATT220
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
SGSIF344
V CES
V CEO
VEBO
IC
I CM
IB
I BM
P tot
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
o
T otal Dissipation at Tc = 25 C
T s tg
Tj
Storage Temperature
Max. Operating Junction T emperature
June 1997
Un it
SGSIF 444
1200
600
7
7
12
5
8
40
50
-65 to 150
150
V
V
V
A
A
A
A
W
o
o
C
C
1/7
SGSIF344 / SGSIF444
THERMAL DATA
ISOW AT T220 ISOW AT T218
R t hj-ca se
Thermal Resistance Junction-case
Max
3.12
2.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CES
Collector Cut-off
Current (V BE = 0)
Parameter
V CE = 1200 V
200
µA
I CEO
Collector Cut-off
Current (IB = 0)
V EC = 380 V
V EC = 600 V
200
2
µA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V BE = 7 V
1
mA
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
Test Cond ition s
I C = 100 mA
Min.
Typ .
600
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 3.5 A
I C = 2.5 A
IB = 0.7 A
IB = 0.35 A
1.5
1.5
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 3.5 A
I C = 2.5 A
IB = 0.7 A
IB = 0.35 A
1.5
1.5
V
V
t ON
ts
tf
Turn-on T ime
Storage Time
Fall T ime
RESISTIVE LO AD
IC = 3.5 A
v CC = 250 v
I B1 = 0.7 A
I B1 = -1.4 A
0.7
2.2
0.18
1.2
3.5
0.4
µs
µs
µs
t ON
ts
tf
Turn-on T ime
Storage Time
Fall T ime
RESISTIVE LO AD
IC = 3.5 A
v CC = 250 v
I B1 = -1.4 A
I B1 = 0.7 A
With Antisaturation Network
0.7
1.5
0.2
µs
µs
µs
t ON
ts
tf
Turn-on T ime
Storage Time
Fall T ime
RESISTIVE LO AD
IC = 3.5 A
V CC = 250 V
V BE (off) = - 5 V
I B1 = 0.7 A
0.7
1
0.2
µs
µs
µs
ts
tf
Storage Time
Fall T ime
INDUCTIVE LOAD
hFE = 5
I C = 3.5 A
V CL = 450 V V BE(off ) = -5 V
L = 300 µH
R BB = 1.2 Ω
1.4
0.1
ts
tf
Storage Time
Fall T ime
INDUCTIVE LOAD
hFE = 5
I C = 3.5 A
V CL = 450 V V BE(off ) = -5 V
L = 300 µH
R BB = 1.2 Ω
T c = 100 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
2.8
0.2
µs
µs
4
0.3
µs
µs
SGSIF344 / SGSIF444
Safe Operating Area
Reverse Biased SOA
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
SGSIF344 / SGSIF444
Resistive Load Switching Times
Switching Times Percentance Variation
4/7
Inductive Load Switching Times
SGSIF344 / SGSIF444
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
L4
P011G
5/7
SGSIF344 / SGSIF444
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
U
4.6
0.090
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1
2
3
L1
L4
P025C
6/7
SGSIF344 / SGSIF444
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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