STRH50P6FSY1 STRH50P6FSY3 P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET Features Type VDSS STRH50P6FSY1 60 V STRH50P6FSY3 60 V ■ Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA ■ Low total gate charge ■ Light weight ■ 100% avalanche tested ■ Application oriented characterization ■ Hermetically sealed ■ Heavy ion SOA ■ 100 kRad TID ■ SEL & SEGR with 34Mev/cm²/mg LET ions Figure 1. Internal schematic diagram Applications ■ Satellite ■ High reliability Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary Order codes Marking Package Packaging STRH50P6FSY1 (1) RH50P6FSY1 TO-254AA Individual strip pack (2) RH50P6FSY3 TO-254AA Individual strip pack STRH50P6FSY3 1. Mil temp range 2. Space flights parts (full ESCC flow screening) November 2007 Rev 3 1/13 www.st.com 13 Contents STRH50P6FSY3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) ............................. 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STRH50P6FSY3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings (pre-irradiation) Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate-source voltage ±18 V Drain current (continuous) at TC= 25°C 50 A Drain current (continuous) at TC= 100°C 32 A Drain current (pulsed) 200 A Total dissipation at TC= 25°C 180 W 1.4 V/ns -55 to 150 °C 150 °C Value Unit 0.5 °C/W 0.21 °C/W 48 °C/W Value Unit ID (1) ID (1) IDM (2) PTOT (1) dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Rated according to the Rthj-case + Rthc-s 2. Pulse width limited by safe operating area 3. ISD ≤ 50 A, di/dt ≤ 56 A/µs, VDD = 80%V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink Rthj-amb Thermal resistance junction -amb Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 25 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=42 V) 932 mJ Repetitive avalanche 45 mJ EAR(1) 1. Pulse number = 10; f= 10 KHz; D.C. = 50% Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed 3/13 Electrical characteristics 2 STRH50P6FSY3 Electrical characteristics (TCASE = 25°C unless otherwise specified) 2.1 Pre-irradiation Table 5. Symbol Parameter Test conditions Min. IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss IGSS Gate body leakage current (VDS = 0) VGS = ±18 V Drain-source breakdown voltage ID = 250 µA, VGS = 0 100 VGS(th) Gate threshold voltage VDS =VGS, ID = 1 mA 2 RDS(on) Static drain-source on resistance VGS = 12 V, ID = 25 A V(BR)DSS Table 6. Symbol Typ. Max Unit 10 µA ±100 nA V 4.5 V 0.047 0.053 Ω Dynamic Parameter Test conditions Min. Typ. Max Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 2632 440 187.2 3290 550 234 3948 660 280.8 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 50 V, ID = 25 A, VGS=12 V 92.8 10.4 20.8 116 13 26 139.2 15.6 31.2 nC nC nC Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain 0.8 1 1.2 Ω Min. Typ. Max Unit 13.6 40 65.6 28.8 17 50 82 36 20.4 60 98.4 43.2 ns ns ns ns RG Table 7. Symbol td(on) tr td(off) tf 4/13 On/off states Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 25 A, RG = 4.7 Ω, VGS = 12 V STRH50P6FSY3 Table 8. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 50 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 25°C Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 150°C trr Qrr IRRM trr Qrr IRRM 50 200 A A 1.1 V 240 300 3.85 25.6 360 ns µC A 300 376 5.64 30 451 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2.2 Post-irradiation The ST rad-hard power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25°C up to 100Krad (a)) Table 9. Symbol On/off states Parameter Test conditions Min. IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss IGSS Gate body leakage current (VDS = 0) VGS = ±18 V Drain-source breakdown voltage ID = 250 µA, VGS = 0 100 VGS(th) Gate threshold voltage VDS =VGS, ID = 1 mA 2 RDS(on) Static drain-source on resistance VGS = 12 V, ID = 25 A V(BR)DSS Typ. Max Unit 10 µA ±100 nA V 0.047 4.5 V 0.053 Ω a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec. 5/13 Electrical characteristics Table 10. STRH50P6FSY3 Single event effect, SOA(1) Ion Let (Mev/(mg/cm2)) Energy (MeV) Range (µm) VDS (V) @VGS0V Kr 34 316 43 60 Xe 55.9 459 43 48 1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated Figure 2. Bias condition during radiation Table 11. Source drain diode Symbol Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 50 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 25°C Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, di/dt = 100 A/µs VDD= 20 V, Tj = 150°C trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/13 Min. Typ. Max Unit 50 200 A A 1.1 V 240 300 3.85 25.6 360 ns µC A 300 376 5.64 30 451 ns µC A STRH50P6FSY3 Electrical characteristics 2.3 Electrical characteristics (curves) Figure 3. Safe operating area Figure 4. Thermal impedance Figure 5. Output characteristics Figure 6. Transfer characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations 7/13 Electrical characteristics Figure 9. Normalized BVDSS vs temperature Figure 11. Normalized gate threshold voltage vs temperature Figure 13. Source drain-diode forward characteristics 8/13 STRH50P6FSY3 Figure 10. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature STRH50P6FSY3 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load (1) 1. Max driver VGS slope = 1V/ns (no DUT) Figure 15. Unclamped inductive load test circuit (single pulse and repetitive) 9/13 Package mechanical data 4 STRH50P6FSY3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STRH50P6FSY3 Package mechanical data Table 12. TO-254AA mechanical data mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 13.59 13.84 0.535 0.545 B 13.59 13.84 0.535 0.545 C 20.07 20.32 0.790 0.80 D 6.32 6.60 0.249 0.260 E 1.02 1.27 0.040 0.050 F 3.53 3.78 0.139 0.149 G 16.89 17.40 0.665 0.685 H I 6.86 0.89 0.270 1.14 0.035 0.045 J 3.81 0.150 K 3.81 0.150 L 12.95 M 14.50 3.05 0.510 0.570 0.120 N 0.71 0.025 R1 1.0 0.040 R2 1.65 0.065 Mechanical drawing 11/13 Revision history 5 STRH50P6FSY3 Revision history Table 13. Document revision history Date Revision 05-Jul-2006 1 First release 20-Dec-2006 2 Figure 3. has been updated 3 Note 2 on device summary has been corrected Added figures: 2 and 15. Updated values on tables: 6, 7, 8 and 11 Minor text changes to improve readability 20-Nov-2007 12/13 Changes STRH50P6FSY3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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