PEREGRINE PE43703MLI-Z

Product Specification
PE43703
50 Ω RF Digital Attenuator
7-bit, 31.75 dB, DC-6.0 GHz, VssEXT option
Product Description
The PE43703 is a HaRP™-enhanced, high linearity, 7-bit RF
Digital Step Attenuator (DSA). This highly versatile DSA
covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB, or 1.0
dB steps. The customer can choose which step size and
associated specifications are best suited for their application.
The Peregrine 50Ω RF DSA provides multiple CMOS control
interfaces and an optional external Vss feature. It maintains
high attenuation accuracy over frequency and temperature and
exhibits very low insertion loss and low power consumption.
Performance does not change with Vdd due to on-board
regulator. This next generation Peregrine DSA is available in a
5x5 mm 32-lead QFN footprint.
Features
• HaRP™-enhanced UltraCMOS™ device
• Attenuation options: 0.25 dB, 0.5 dB, or
1.0 dB steps to 31.75 dB
• 0.25 dB monotonicity for ≤ 4.0 GHz
• 0.5 dB monotonicity for ≤ 5.0 GHz
• 1 dB monotonicity for ≤ 6.0 GHz
• High Linearity: Typical +59 dBm IIP3
• Excellent low-frequency performance
• Optional External Vss Control (VssEXT)
• 3.3 V or 5.0 V Power Supply Voltage
The PE43703 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
• Fast switch settling time
• Programming Modes:
•
Direct Parallel
Latched Parallel
• Serial-Addressable: Program up to
eight addresses 000 - 111
• High-attenuation state @ power-up (PUP)
•
Figure 1. Package Type
32-lead 5x5x0.85 mm QFN Package
• CMOS Compatible
• No DC blocking capacitors required
Figure 2. Functional Schematic Diagram
Switched Attenuator Array
RF Output
RF Input
Parallel Control
7
Serial In
Control Logic Interface
CLK
LE
A0
A1
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A2
P/S
(optional)
VssEXT
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 15
PE43703
Product Specification
Table 1. Electrical Specifications: 0.25 dB steps @ +25°C, VDD = 3.3 V or 5.0 V, VssEXT = -2.7 V or GND
Parameter
Test Conditions
Frequency
Min
Frequency Range
Typical
Max
Units
DC – 4
Attenuation Range
0.25 dB Step
DC ≤ 4 GHz
Insertion Loss
0 dB - 7.75 dB Attenuation settings
8 dB - 31.75 dB Attenuation settings
0 dB - 31.75 dB Attenuation settings
Attenuation Error
GHz
0 – 31.75
DC < 3 GHz
DC < 3 GHz
3 GHz ≤ 4 GHz
Return Loss
DC - 4 GHz
Relative Phase
All States
DC - 4 GHz
P1dB
Input
20 MHz - 4 GHz
IIP3
Two tones at +18 dBm, 20 MHz spacing
20 MHz - 4 GHz
Typical Spurious Value1
VssEXT grounded
1MHz
dB
1.9
2.4
dB
±(0.2+1.5%)
±(0.15+4%)
±(0.25+4.5%)
dB
dB
dB
18
30
Video Feed Through
dB
44
deg
32
dBm
59
dBm
-110
dBm
10
mVpp
Switching Time
50% DC CTRL to 10% / 90% RF
650
ns
RF Trise/Tfall
10% / 90% RF
400
ns
Settling Time
RF settled to within 0.05 dB of final value.
RBW = 5 MHz, Averaging ON.
4
25
µs
Note: 1. To prevent negative voltage generator spurs, supply –2.7 volts to VssEXT.
Performance Plots, 0.25 dB state
Figure 4. 0.25dB Attenuation vs. Attenuation State
Figure 3. 0.25 dB Step Error vs. Frequency*
200 MHz
2200 MHz
900 MHz
3000 MHz
0.25-dB PE43701 Attenuation
1800 MHz
35
0.500
900 MHz
1800 MHz
2200 MHz
3000 MHz
30
Attenuation dB
Attenuation
dB
Step Error (dB.)
0.400
0.300
0.200
0.100
25
20
15
10
5
0
0.000
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
0
Attenuation Setting (dB.)
5
10
2.00
0.25dB State
0.5 dB State
1dB State
2dB State
4dB State
8dB State
16dB State
31.75dB State
30
35
Figure 6. 0.25 dB Attenuation Error vs. Frequency
1.500
1.50
200 MHz
900 MHz
1800 MHz
2200 MHZ
3000 MHz
4000 MHz
1.000
1.00
Attenuation Error (dB.)
Bit Error (dB.)
25
Attenuation State
*Monotonicity is held so long as Step-Error does not cross zero
Figure 5. 0.25 dB Major State Bit Error
15
20
Attenuation State
0.50
0.00
-0.50
-1.00
0.500
0.000
-0.500
-1.000
-1.50
-2.00
-1.500
0.0
1.0
2.0
Frequency (GHz)
3.0
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 15
4.0
0.0
4.0
8.0
12.0
16.0
20.0
Attenuation Setting (dB.)
Document No. 70-0245-04
24.0
28.0
32.0
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Table 2. Electrical Specifications: 0.5 dB steps @ +25°C, VDD = 3.3 V or 5.0 V, VssEXT = -2.7 V or GND
Parameter
Test Conditions
Frequency
Min
Typical
Frequency Range
Attenuation Range
0.5 dB Step
DC ≤ 5 GHz
Insertion Loss
0 dB - 31.5 dB Attenuation settings
0 dB - 16.5 dB Attenuation settings
17 dB - 31.5 dB Attenuation settings
Attenuation Error
All States
DC - 5 GHz
P1dB
Input
20 MHz - 5 GHz
Two tones at +18 dBm, 20 MHz spacing
20 MHz - 5 GHz
VssEXT grounded
1 MHz
1
Typical Spurious Value
dB
2.6
dB
±(0.25+4.5%)
±(0.3+5%)
±(1.3+0%)
dB
dB
dB
18
Relative Phase
IIP3
0 – 31.5
2.0
DC - 5 GHz
Units
GHz
DC < 4 GHz
4 ≤ 5 GHz
4 ≤ 5 GHz
Return Loss
Max
DC – 5
30
Video Feed Through
dB
56
deg
32
dBm
57
dBm
-110
dBm
10
mVpp
Switching Time
50% DC CTRL to 10% / 90% RF
650
ns
RF Trise/Tfall
10% / 90% RF
RF settled to within 0.05 dB of final value.
RBW = 5 MHz, Averaging ON.
400
ns
Settling Time
4
25
µs
Note: 1. To prevent negative voltage generator spurs, supply –2.7 volts to VssEXT.
Performance Plots, 0.5 dB state
Figure 7. 0.5 dB Step-Error vs. Frequency*
200 MHz
3000 MHz
900 MHz
4000 MHz
1800 MHz
5000 MHz
Figure 8. 0.5 dB Attenuation vs. Attenuation State
0.5-dB PE43703 Attenuation
2200 MHz
35
1.000
Attenuation dBdB
Attenuation
30
Step Error (dB.)
0.750
0.500
0.250
900 MHz
2200 MHz
3800 MHz
5000 MHz
25
20
15
10
5
0.000
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
0
32.0
0
Attenuation Se tting (dB.)
5
10
*Monotonicity is held so long as Step-Error does not cross zero
1dB State
16dB State
25
30
35
Attenuation State
Figure 10. 0.5 dB Attenuation Error vs. Frequency
Figure 9. 0.5 dB Major State Bit Error
0.5dB State
8dB State
15
20
Attenuation State
2dB State
31.5dB State
4dB State
200 MHz
3000 MHz
2.00
900 MHz
4000 MHz
1800 MHz
5000 MHz
2200 MHz
1.500
1.50
1.000
Attenuation Error (dB.)
Bit Error (dB.)
1.00
0.50
0.00
-0.50
-1.00
0.500
0.000
-0.500
-1.000
-1.50
-2.00
-1.500
0.0
1.0
2.0
3.0
Frequency (GHz)
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4.0
5.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
Atte nuation Setting (dB.)
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 15
PE43703
Product Specification
Table 3. Electrical Specifications: 1 dB steps @ +25°C, VDD = 3.3 V or 5.0 V, VssEXT = -2.7 V or GND
Parameter
Test Conditions
Frequency range
Attenuation Range
Frequency
Min
Typical
Max
Units
DC – 6
0 - 31
1 dB Step
DC ≤ 6 GHz
Insertion Loss
GHz
dB
2.3
2.8
dB
±(0.25+4.5%)
+0.4+8%
+1.4+0%
-0.2-3%
dB
dB
dB
dB
0 dB - 31 dB Attenuation settings
0 dB - 12 dB Attenuation settings
13 dB - 31 dB Attenuation setting
0 dB - 31 dB Attenuation settings
DC – 4 GHz
4 GHz ≤ 6 GHz
4 GHz ≤ 6 GHz
4 GHz ≤ 6 GHz
DC - 6 GHz
18
dB
Relative Phase
All States
DC - 6 GHz
74
deg
P1dB
Input
20 MHz - 6 GHz
32
dBm
IIP3
Two tones at +18 dBm, 20 MHz spacing
20 MHz - 6 GHz
53
dBm
Typical Spurious Value1
VssEXT grounded
1 MHz
Attenuation Error
Return Loss
30
-110
dBm
10
mVpp
Video Feed Through
Switching Time
50% DC CTRL to 10% / 90% RF
650
ns
RF Trise/Tfall
10% / 90% RF
400
ns
Settling Time
RF settled to within 0.05 dB of final value.
RBW = 5 MHz, Averaging ON.
4
25
µs
Note: 1. To prevent negative voltage generator spurs, supply –2.7 volts to VssEXT.
Performance Plots, 1 dB state
Figure 11. 1 dB Step-Error vs. Frequency*
200 MHz
3000 MHz
900 MHz
4000 MHz
1800 MHz
5000 MHz
Figure 12. 1 dB Attenuation vs Attenuation State
2200 MHz
6000 MHz
1-dB PE43703 Attenuation
2.000
35
1.750
30
Attenuation
Attenuation dBdB
Step Error (dB.)
1.500
1.250
1.000
0.750
0.500
900 MHz
2200 MHz
3800 MHz
5800 MHz
25
20
15
10
5
0.250
0
0.000
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
0
Attenuation Setting (dB.)
5
10
*Monotonicity is held so long as Step-Error does not cross zero
1dB State
8dB State
2dB State
16dB State
30
35
Figure 14. 1dB Attenuation Error vs. Frequency
4dB State
31dB State
200 MHz
900 MHz
1800 MHz
2200 MHz
1.500
1.50
1.000
Attenuation Error (dB.)
1.00
Bit Error (dB.)
25
Attenuation State
Figure 13. 1 dB Major State Bit Error
2.00
15
20
Attenuation State
0.50
0.00
-0.50
-1.00
0.500
0.000
-0.500
-1.000
-1.50
-2.00
-1.500
0.0
1.0
2.0
3.0
4.0
5.0
Frequency (GHz)
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 15
6.0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
Attenuation Setting (dB.)
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Performance Plots, 1 dB state (continued)
Figure 15. 1 dB Attenuation Error vs. Frequency
3000 MHz
4000 MHz
5000 MHz
Figure 16. Insertion Loss vs. Temperature
-40C
6000 MHz
+25C
+85C
0
1.500
-0.5
-1
-1.5
Insertion Loss (dBm.)
Attenuation Error (dB.)
1.000
0.500
0.000
-0.500
-2
-2.5
-3
-3.5
-4
-1.000
-4.5
-1.500
-5
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
0.0
1.0
2.0
3.0
Atte nuation Setting (dB.)
Figure 17. Input Return Loss vs. Attenuation
T = +25C
0
0dB
0.25dB
0.5dB
1dB
4dB
8dB
16dB
31.75dB
2dB
0dB
4dB
0
7.0
8.0
9.0
0.25dB
8dB
0.5dB
16dB
1dB
31.75dB
2dB
-10
-20
Return Loss (dB.)
Return Loss (dB.)
6.0
Figure 18. Output Return Loss vs. Attenuation
T = +25C
-10
-30
-40
-50
-20
-30
-40
-50
-60
-70
-60
0
1
2
3
4
5
6
Frequency (GHz.)
7
8
9
Figure 19. Input Return Loss vs. Temperature
16dB State
-40C
25C
0
1
2
3
4
5
Frequency (GHz.)
6
7
8
9
Figure 20. Output Return Loss vs. Temperature
16dB State
85C
0
-40C
0
25C
85C
-5
-5
-10
-10
Return Loss (dB.)
Return Loss (dB.)
4.0
5.0
Frequency (GHz)
-15
-20
-25
-30
-15
-20
-25
-30
-35
-40
-35
-45
-40
-50
0
1
2
3
4
5
6
Frequency (GHz.)
Document No. 70-0245-04 │ www.psemi.com
7
8
9
0
1
2
3
4
5
6
Frequency (GHz.)
7
8
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 15
9
PE43703
Product Specification
Performance Plots (continued)
Figure 21. Relative Phase vs. Frequency
0.25dB
0.5dB
1dB
4dB
8dB
16dB
31.75dB
Figure 22. Relative Phase vs. Temperature
31.75dB State
2dB
900 MHz
35.00
80
60
40
20
3000 MHz
25.00
20.00
15.00
10.00
5.00
0.00
0
0
1
2
3
4
5
6
7
-40
8
-20
0
Figure 23. Attenuation Error vs. Attenuation
Setting @ 900 MHz
900 MHz @ T=+25 C
900 MHz @ T= -40C
20
40
60
80
Temperature (Deg. C.)
Frequency (GHz.)
Figure 24. Attenuation Error vs. Attenuation
Setting @ 1800 MHz
1800 MHz @ T= +25C
900 MHz @ T= +85C
0.500
0.500
0.300
0.300
Attenuation Error (dB.)
Attenuation Error (dB.)
1800 MHz
30.00
100
Phase (deg.)
Relative Phase Error (Deg.)
120
0dB
0.100
-0.100
-0.300
1800 MHz @ T= -40C
1800 MHz @ T= +85C
0.100
-0.100
-0.300
-0.500
-0.500
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
0.0
4.0
8.0
Attenuation Setting (dB.)
Figure 25. Attenuation Error vs. Attenuation
Setting @ 3000 MHz
3000 MHz @ T= +25C
3000 MHz @ T= -40C
12.0
16.0
20.0
24.0
28.0
32.0
Attenuation Setting (dB.)
Figure 26. Input IP3 vs. Frequency
3000 MHz @ T= +85C
0.500
0dB
0.25dB
0.5dB
1dB
4dB
8dB
16dB
31.75dB
2dB
70
65
Input IP3 (dBm.)
Attenuation Error (dB.)
0.300
0.100
-0.100
60
55
50
45
40
-0.300
35
30
-0.500
0.0
4.0
8.0
12.0
16.0
20.0
24.0
28.0
32.0
Attenuation Setting (dB.)
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 15
0
1000
2000
3000
4000
5000
6000
7000
Frequency (MHz.)
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
C0.5
C1
C2
C4
C8
C16
32
31
30
29
28
27
26
SI
C0.25
Figure 27. Pin Configuration (Top View)
25
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESDsensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
specified rating.
NC
1
24
CLK
VDD
2
23
LE
P/S
3
22
A1
Latch-Up Avoidance
A0
4
21
A2
GND
5
20
VssEXT
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
GND
6
19
GND
RF1
7
18
RF2
GND
8
17
GND
11
12
13
14
15
GND
GND
GND
GND
16
GND
10
GND
GND
9
GND
Exposed
Solder pad
Table 4. Pin Descriptions
Optional External Vss Control (VssEXT)
For proper operation, the VssEXT control must be
grounded or at the Vss voltage specified in the
Operating Ranges table. When the VssEXT control pin
on the package is grounded the switch FET’s are
biased with an internal low spur negative voltage
generator. For applications that require the lowest
possible spur performance, VssEXT can be applied to
bypass the internal negative voltage generator to
eliminate the spurs.
Pin No.
Pin Name
1
N/C
No Connect
Description
Switching Frequency
2
VDD
Power supply pin
3
P/S
Serial/Parallel mode select
4
A0
Address Bit A0 (LSB)
5
GND
Ground
The PE43703 has a maximum 25 kHz switching rate
when VssEXT is grounded. Switching rate is defined to
be the speed at which the DSA can be toggled across
attenuation states.
6
GND
Ground
Moisture Sensitivity Level
7
RF1
RF1 port
8 - 17
GND
Ground
The Moisture Sensitivity Level rating for the PE43703 in
the 5x5 QFN package is MSL1.
18
RF2
RF2 port
19
GND
Ground
Exposed Solder Pad Connection
20
VssEXT
External Vss Control
21
A2
Address Bit A2
The exposed solder pad on the bottom of the package
must be grounded for proper device operation.
22
A1
Address Bit A1
23
LE
Latch Enable input
24
CLK
Serial interface clock input
25
SI
26
C16
Serial Interface input
Attenuation control bit, 16 dB
27
C8
Attenuation control bit, 8 dB
28
C4
Attenuation control bit, 4 dB
29
C2
Attenuation control bit, 2 dB
30
C1
Attenuation control bit, 1 dB
31
C0.5
Attenuation control bit, 0.5 dB
32
C0.25
Attenuation control bit, 0.25 dB
Paddle
GND
Ground for proper operation
Document No. 70-0245-04 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 15
PE43703
Product Specification
Table 5. Operating Ranges
Parameter
VDD Power Supply Voltage
Min
Typ
3.0
3.3
VDD Power Supply Voltage
VssEXT Negative Power Supply
Voltage1
-3.0
IDD Power Supply Current
Digital Input High
Table 6. Absolute Maximum Ratings
Max
VDD
Parameter/Conditions
Min
Max
Units
Power supply voltage
-0.3
6.0
V
Vss External Negative Power
Supply Voltage (optional)
-4.0
0.3
V
VI
Voltage on any Digital input
-0.3
5.8
V
V
PIN
Input power (50Ω)
1 Hz ≤ 20 MHz
20 MHz ≤ 6 GHz
See fig. 28
+23
dBm
dBm
See fig. 28
+23
dBm
dBm
TST
Storage temperature range
150
°C
85
°C
VESD
ESD voltage (HBM)1
ESD voltage (Machine Model)
500
100
V
V
5.5
V
-2.7
-2.4
V
70
350
µA
5.5
PIN Input power (50Ω):
1 Hz ≤ 20 MHz
20 MHz ≤ 6 GHz
-40
Symbol
V
5.0
2.6
TOP Operating temperature
range
Digital Input Low
Units
25
0
Digital Input Leakage
1
V
15
µA
VssEXT
-65
Note: 1. Human Body Model (HBM, MIL_STD 883 Method 3015.7)
Note: 1. Applied only when external VSS power supply used. Pin 20
must be grounded when using internal Vss supply
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
Figure 28. Maximum Power Handling Capability: Z0 = 50 Ω
30.0
25.0
Pin dBm
20.0
15.0
10.0
5.0
0.0
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
Hz
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 15
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Table 7. Control Voltage
State
Table 10. Serial Address Word Truth Table
Bias Condition
Address Word
Low
0 to +1.0 Vdc at 2 µA (typ)
A7
(MSB)
High
+2.6 to +5 Vdc at 10 µA (typ)
X
X
X
X
X
L
X
X
X
X
X
L
Table 8. Latch and Clock Specifications
A6
A5
A4
A3
A2
A0
Address
Setting
L
L
000
L
H
001
A1
X
X
X
X
X
L
H
L
010
X
X
X
X
X
L
H
H
011
L
L
100
Latch Enable
Shift Clock
Function
X
X
X
X
X
H
0
↑
Shift Register Clocked
X
X
X
X
X
H
L
H
101
Contents of shift register
transferred to attenuator core
X
X
X
X
X
H
H
L
110
X
X
X
X
X
H
H
H
111
↑
X
Table 9. Parallel Truth Table
Table 11. Serial Attenuation Word Truth Table
Parallel Control Setting
Attenuation Word
D1
D0
(LSB)
Attenuation
Setting
RF1-RF2
D6
D5
D4
D3
D2
D1
D0
Attenuation
Setting
RF1-RF2
L
L
L
L
L
L
L
Reference I.L.
X
L
L
L
L
L
L
L
Reference I.L.
L
L
L
L
L
L
H
0.25 dB
X
L
L
L
L
L
L
H
0.25 dB
L
L
L
L
L
H
L
0.5 dB
X
L
L
L
L
L
H
L
0.5 dB
L
L
L
L
H
L
L
1 dB
X
L
L
L
L
H
L
L
1 dB
L
L
L
H
L
L
L
2 dB
X
L
L
L
H
L
L
L
2 dB
L
L
H
L
L
L
L
4 dB
D7
D6
D5
D4
D3
D2
L
L
H
L
L
L
L
4 dB
X
L
H
L
L
L
L
L
8 dB
X
L
H
L
L
L
L
L
8 dB
H
L
L
L
L
L
L
16 dB
X
H
L
L
L
L
L
L
16 dB
H
H
H
H
H
H
H
31.75 dB
X
H
H
H
H
H
H
H
31.75 dB
Table 12. Serial-Addressable Register Map
Bits can either be set to logic high or logic low
MSB (last in)
LSB (first in)
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
A7
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
Address Word
Attenuation Word
Attenuation Word is derived directly from the attenuation value. For example, to program the 18.25 dB state
at address 3:
Address word: XXXXX011
Attenuation Word: Multiply by 4 and convert to binary → 4 * 18.25 dB → 73 → X1001001
Serial Input: XXXXX011X1001001
Document No. 70-0245-04 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 9 of 15
PE43703
Product Specification
Programming Options
Parallel/Serial Selection
Either a parallel or serial interface can be used to
control the PE43703. The P/S bit provides this
selection, with P/S=LOW selecting the parallel
interface and P/S=HIGH selecting the serial
interface.
The serial-addressable interface is controlled using
three CMOS-compatible signals: Serial-In (SI),
Clock (CLK), and Latch Enable (LE). The SI and
CLK inputs allow data to be serially entered into the
shift register. Serial data is clocked in LSB first,
beginning with the attenuation word.
Parallel Mode Interface
The parallel interface consists of seven CMOScompatible control lines that select the desired
attenuation state, as shown in Table 9.
The shift register must be loaded while LE is held
LOW to prevent the attenuator value from changing
as data is entered. The LE input should then be
toggled HIGH and brought LOW again, latching the
new data into the DSA. Address word and
attenuation word truth tables are listed in Table 10
& Table 11, respectively. A programming example
of the serial-addressable register is illustrated in
Table 12. The serial-addressable timing diagram is
illustrated in Fig. 29.
The parallel interface timing requirements are
defined by Fig. 30 (Parallel Interface Timing
Diagram), Table 9 (Parallel Interface AC
Characteristics), and switching speed (Table 1).
For latched-parallel programming the Latch
Enable (LE) should be held LOW while changing
attenuation state control values, then pulse LE
HIGH to LOW (per Fig. 30) to latch new
attenuation state into device.
For direct parallel programming, the Latch Enable
(LE) line should be pulled HIGH. Changing
attenuation state control values will change device
state to new attenuation. Direct Mode is ideal for
manual control of the device (using hardwire,
switches, or jumpers).
Serial-Addressable Interface
The serial-addressable interface is a 16-bit serialin, parallel-out shift register buffered by a
transparent latch. The 16-bits make up two words
comprised of 8-bits each. The first word is the
Attenuation Word, which controls the state of the
DSA. The second word is the Address Word,
which is compared to the static (or programmed)
logical states of the A0, A1 and A2 digital inputs. If
there is an address match, the DSA changes
state; otherwise its current state will remain
unchanged. Fig. 29 illustrates a example timing
diagram for programming a state. It is
recommended that all parallel control inputs be
grounded when the DSA is used in Serial Mode.
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 10 of 15
Power-up Control Settings
The PE43703 will always initialize to the maximum
attenuation setting (31.75 dB) on power-up for
both the serial-addressable and latched-parallel
modes of operation and will remain in this setting
until the user latches in the next programming
word. In direct-parallel mode, the DSA can be
preset to any state within the 31.75 dB range by
pre-setting the parallel control pins prior to powerup. In this mode, there is a 400-µs delay between
the time the DSA is powered-up to the time the
desired state is set. During this power-up delay,
the device attenuates to the maximum attenuation
setting (31.75 dB) before defaulting to the user
defined state. If the control pins are left floating in
this mode during power-up, the device will default
to the minimum attenuation setting (insertion loss
state).
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Figure 29. Serial-Addressable Timing Diagram
Bits can either be set to logic high or logic low
DI[6:0]
TDISU
ADD[2:0]
TDIH
VALID
TASU
TAH
P/S
TPSSU
TPSH
D[0]
SI
TSISU
D[1]
D[2]
D[3]
D[4]
D[5]
D[6]
A[0]
A[1]
A[2]
TSIH
CLK
TCLKL
TCLKH
TLESU
LE
TLEPW
DO[6:0]
TPD
VALID
Figure 30. Latched-Parallel/Direct-Parallel Timing Diagram
P/S
TPSSU
DI[6:0]
TPSH
VALID
TDISU
TDIH
LE
TLEPW
DO[6:0]
VALID
TDIPD
TPD
Table 13. Serial Interface AC Characteristics
VDD = 3.3 or 5.0 V, -40° C < TA < 85° C, unless otherwise specified
Symbol
Parameter
Min
Max
Unit
FCLK
Serial clock frequency
-
10
MHz
TCLKH
Serial clock HIGH time
30
-
ns
TCLKL
Serial clock LOW time
30
-
ns
TLESU
Last serial clock rising edge
setup time to Latch Enable
rising edge
10
-
ns
TLEPW
Latch Enable min. pulse width
30
-
ns
TSISU
Serial data setup time
10
-
ns
TSIH
Serial data hold time
10
-
Symbol
Parameter
Min
Max
Unit
Latch Enable minimum
pulse width
30
-
ns
TDISU
Parallel data setup time
100
-
ns
TDIH
Parallel data hold time
100
-
ns
TPSSU
Parallel/Serial setup time
100
-
ns
ns
TPSIH
Parallel/Serial hold time
100
-
ns
TPD
Digital register delay
(internal)
-
10
ns
Digital register delay
(internal, direct mode only)
-
5
ns
Parallel data setup time
100
-
ns
TDIH
Parallel data hold time
100
-
ns
TASU
Address setup time
100
-
ns
Address hold time
100
-
ns
TPSSU
Parallel/Serial setup time
100
-
ns
TPSH
Parallel/Serial hold time
100
-
ns
TPD
Digital register delay (internal)
-
10
ns
Note:
VDD = 3.3 or 5.0 V, -40° C < TA < 85° C, unless otherwise specified
TLEPW
TDISU
TAH
Table 14. Parallel and Direct Interface AC
Characteristics
TDIPD
fClk is verified during the functional pattern test. Serial
programming sections of the functional pattern are clocked
at 10 MHz to verify fclk specification.
Document No. 70-0245-04 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 11 of 15
PE43703
Product Specification
Evaluation Kit
The Digital Attenuator Evaluation Kit board was
designed to ease customer evaluation of the
PE43703 Digital Step Attenuator.
Direct-Parallel Programming Procedure
For automated direct-parallel programming,
connect the test harness provided with the EVK
from the parallel port of the PC to the J1 & Serial
header pin and set the D0-D6 SP3T switches to the
‘MIDDLE’ toggle position. Position the Parallel/
Serial (P/S) select switch to the Parallel (or left)
position. The evaluation software is written to
operate the DSA in either Parallel or SerialAddressable Mode. Ensure that the software is set
to program in Direct-Parallel mode. Using the
software, enable or disable each setting to the
desired attenuation state. The software
automatically programs the DSA each time an
attenuation state is enabled or disabled.
For manual direct-parallel programming,
disconnect the test harness provided with the EVK
from the J1 and Serial header pins. Position the
Parallel/Serial (P/S) select switch to the Parallel (or
left) position. The LE pin on the Serial header must
be tied to VDD. Switches D0-D6 are SP3T switches
which enable the user to manually program the
parallel bits. When any input D0-D6 is toggled
‘UP’, logic high is presented to the parallel input.
When toggled ‘DOWN’, logic low is presented to
the parallel input. Setting D0-D6 to the ‘MIDDLE’
toggle position presents an OPEN, which forces an
on-chip logic low. Table 9 depicts the parallel
programming truth table and Fig. 30 illustrates the
parallel programming timing diagram.
Figure 31. Evaluation Board Layout
Peregrine Specification 101-0312
Note: Reference Fig. 32 for Evaluation Board Schematic
Serial-Addressable Programming Procedure
Position the Parallel/Serial (P/S) select switch to
the Serial (or right) position. Prior to
programming, the user must define an address
setting using the ADD header pin. Jump the
middle pins on the ADD header A0-A2 (or lower)
row of pins to set logic high, or jump the middle
pins to the upper row of pins to set logic low. If
the ADD pins are left open, then 000 become the
default address. The evaluation software is
written to operate the DSA in either Parallel or
Serial-Addressable Mode. Ensure that the
software is set to program in Serial-Addressable
mode. Using the software, enable or disable each
setting to the desired attenuation state. The
software automatically programs the DSA each
time an attenuation state is enabled or disabled.
Latched-Parallel Programming Procedure
For automated latched-parallel programming, the
procedure is identical to the direct-parallel method.
The user only must ensure that Latched-Parallel is
selected in the software.
For manual latched-parallel programming, the
procedure is identical to direct-parallel except now
the LE pin on the Serial header must be logic low
as the parallel bits are applied. The user must then
pulse LE from 0V to VDD and back to 0V to latch the
programming word into the DSA. LE must be logic
low prior to programming the next word.
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 12 of 15
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Figure 32. Evaluation Board Schematic
Peregrine Specification 102-0381
Note: Capacitors C1-C8, C13, & C14 may be omitted.
Figure 33. Package Drawing
QFN 5x5 mm
A
MAX
0.900
NOM
0.850
MIN
0.800
Document No. 70-0245-04 │ www.psemi.com
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 13 of 15
PE43703
Product Specification
Figure 34. Tape and Reel Drawing
Tape Feed Direction
Pin 1
Top of
Device
Device Orientation in Tape
Figure 35. Marking Specifications
43703
YYWW
ZZZZZ
YYWW = Date Code
ZZZZZ = Last five digits of Lot Number
Table 15. Ordering Information
Order Code Part Marking
Description
Package
Shipping Method
PE43703MLI
43703
PE43703 G - 32QFN 5x5mm-75A
Green 32-lead 5x5mm QFN
Bulk or tape cut from reel
PE43703MLI-Z
43703
PE43703 G – 32QFN 5x5mm-3000C
Green 32-lead 5x5mm QFN
3000 units / T&R
EK43703-01
43703
PE43703 G – 32QFN 5x5mm-EK
Evaluation Kit
1 / Box
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 14 of 15
Document No. 70-0245-04
│ UltraCMOS™ RFIC Solutions
PE43703
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
High-Reliability and Defense Products
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Americas
San Diego, CA, USA
Phone: 858-731-9475
Fax: 848-731-9499
Europe/Asia-Pacific
Aix-En-Provence Cedex 3, France
Phone: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
Document No. 70-0245-04 │ www.psemi.com
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks
of Peregrine Semiconductor Corp.
©2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 15 of 15