Si4410DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) () ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA Si4410DY-T1-REVA (with Tape and Reel) Si4410DY-REVA-E3 (Lead free) Si4410DY-T1-A-E3 (Lead free with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range ID V 10 8 IDM 50 IS 2.3 PD Unit 2.5 1.6 A W TJ, Tstg - 55 to 150 _C Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 50 Maximum Junction-to-Foot (Drain) RthJF 22 THERMAL RESISTANCE RATINGS Parameter _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 71726 S-40838—Rev. L, 03-May-04 www.vishay.com 1 Si4410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 A 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit 3.0 V "100 nA Static Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea rDS(on) DS( ) VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 25 VDS w 5 V, VGS = 10 V 20 A VGS = 10 V, ID =10 A 0.011 0.0135 VGS = 4.5 V, ID = 5 A 0.015 0.020 gfs VDS = 15 V, ID = 10 A 38 VSD IS = 2.3 A, VGS = 0 V 0.7 1.1 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 10 A 20 34 Total Gate Charge Qgt 37 60 Gate-Source Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltagea A S V Dynamicb Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, V VGS = 10 V V, ID = 10 A VDS = 15 V, VGS = 10 V, ID = 10 A Rg td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 25 V, RL = 25 ID ^ 1 A, VGEN = 10 V, RG = 6 IF = 2.3 A, di/dt = 100 A/s nC 7.0 0.5 td(on) tr 7 1.5 2.6 19 30 9 20 70 100 20 80 40 80 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Values shown are for product revision A. www.vishay.com 2 Document Number: 71726 S-40838—Rev. L, 03-May-04 Si4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 Transfer Characteristics 50 VGS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 10 30 20 TC = 125_C 10 25_C - 55_C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 5 Ciss 2500 C - Capacitance (pF) rDS(on) - On-Resistance ( 4 Capacitance 3000 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 2000 1500 1000 Coss 500 0.000 Crss 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.0 VDS = 15 V ID = 10 A VGS = 10 V ID = 10 A 8 6 4 2 0 0 8 16 24 Qg - Total Gate Charge (nC) Document Number: 71726 S-40838—Rev. L, 03-May-04 32 40 1.5 (Normalized) rDS(on) - On-Resistance ( V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.030 2 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C 1 0.0 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( ) I S - Source Current (A) 40 0.08 0.06 0.04 ID = 10 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Threshold Voltage 0.6 2 Single Pulse Power 80 0.4 60 ID = 250 A - 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 - 0.4 - 0.6 40 20 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 TJ - Temperature (_C) 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance 1.00 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 50_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71726 S-40838—Rev. L, 03-May-04