TOSHIBA 2SJ669

2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
−5
A
Pulse (Note 1)
IDP
−20
A
JEDEC
―
Drain power dissipation
PD
1.2
W
JEITA
―
Single-pulse avalanche energy
(Note 2)
EAS
40.5
mJ
TOSHIBA
Avalanche current
IAR
−5
A
Repetitive avalanche energy (Note 3)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to
ambient
Symbol
Max
Unit
Rth (ch−a)
104
°C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2SJ669
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
—
—
−100
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
—
—
V
V (BR) DSX
ID = −10 mA, VGS = 20 V
−35
—
—
V
Vth
VDS = −10 V, ID = −1 mA
−0.8
—
−2.0
V
VGS = −4 V, ID = −2.5 A
—
0.16
0.25
VGS = −10 V, ID = −2.5 A
—
0.12
0.17
VDS = −10 V, ID = −2.5 A
2.5
5.0
—
—
700
—
—
60
—
—
90
—
—
14
—
—
24
—
—
14
—
—
95
—
—
15
—
—
11
—
—
4
—
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = −10 V, VGS = 0 V, f = 1 MHz
ID = −2.5 A
0V
VGS
tr
Fall time
ton
4.7 Ω
Turn−on time
RL =
12 Ω
tf
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
S
pF
Output
−10 V
Switching time
Ω
Duty <
= 1%, tw = 10 μs
ns
VDD ∼
− −30 V
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
−5
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
−20
A
Forward voltage (diode)
VDSF
Reverse recovery time
trr
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
—
—
1.7
V
IDR = −5 A, VGS = 0 V
dlDR / dt = 50 A / μS
—
40
—
ns
—
32
—
nC
Marking
J669
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SJ669
ID – VDS
−5
−10
−6
−4.
−3.5
Common source
Ta = 25°C
Pulse test
−8
−4
ID – VDS
−8
ID
−3
Drain current
−2.8
−2
VGS = −2.5V
−1
0
0
−0.4
−0.8
−1.2
Drain−source voltage
−1.6
VDS
−10
−6
−4
−8
−3.5
−6
−4
−3
−2
0
−2.0
VGS = −2.5 V
0
(V)
−2
−4
ID – VGS
−8
VDS (V)
Common source
VDS = −10 V
Pulse test
−6
Drain−source voltage
(A)
ID
Drain current
VDS
25
−4
−2
100
0
−1
−2
Ta = −55°C
−3
−4
10
VGS
−1.2
−0.8
−5
−0.4
−2.5
ID = −1.2 A
0
(V)
−4
−8
Common source
VDS = −10 V
Pulse test
Ta = −55°C
25
1
Drain current
−10
ID
−16
VGS
−20
(V)
RDS (ON) − ID
0.5
−1
−12
Gate−source voltage
100
0.1
−0.1
(V)
Common source
Ta = 25°C
Pulse test
−1.6
0
−5
Drain−source ON-resistance
RDS (ON) (Ω)
⎪Yfs⎪
100
−10
VDS – VGS
⎪Yfs⎪ − ID
(S)
−8
−2.0
Gate−source voltage
Forward transfer admittance
−6
Drain−source voltage
−10
0
Common source
Ta = 25°C
Pulse test
(A)
−3
(A)
ID
Drain current
−10
Common source
Ta = 25°C
Pulse test
0.4
0.3
0.2
−4 V
0.1
VGS = −10V
0
−100
0
(A)
3
−2
−4
−6
Drain current
ID
−8
−10
(A)
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2SJ669
RDS (ON) − Ta
IDR − VDS
10
Common source
Ta = 25°C
Pulse test
(A)
Common source
Pulse test
−0.3
−3
IDR
ID = −5 A
−10
−5
−2.5
Drain reverse current
Drain−source ON-resistance
RDS (ON) (Ω)
−0.4
−1.2
−0.2
−5
VGS = −4 V
−1.2
−2.5
−0.1
VGS = −10 V
0
−80
0.1
−40
0
40
80
Ambient temperature
120
Ta
−1
1
160
0
(°C)
0.2
0.4
VGS = 0 V
0.6
0.8
Drain−source voltage
1.0
VDS
1.2
(V)
Capacitance – VDS
Vth − Ta
Common source
−2.0
Vth (V)
VGS = 0 V
Tc = 25°C
1000
Coss
Crss
−1
−10
Drain−source voltage
−40
0
40
80
VDS (V)
Drain−source voltage
1.5
1.0
0.5
−25
80
120
Ambient temperature
160
Ta
200
Common source
ID = −5 A
−40
Ta = 25°C
−15
−12V
−20
4
−10
−24V
VDD = −48 V
−10
−5
VGS
0
5
10
15
Total gate charge
(°C)
−20
Pulse test
−30
0
40
160
(°C)
−50
VDS
0
120
Ta
Dynamic input/output
characteristics
(W)
PD
−0.4
(V)
2.0
Drain power dissipation
−0.8
Ambient temperature
PD − Ta
0
−1.2
0
−80
−100
VDS
−1.6
(V)
10
−0.1
Common source
VDS = −10 V
ID = 1 mA
Pulse test
20
Qg
25
30
VGS
Capacitance
100
Gate threshold voltage
Ciss
C
(pF)
f = 1 MHz
Gate−source voltage
10000
0
(nC)
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2SJ669
rth − tw
1
rth (t)/Rth (ch-a)
Normalized transient thermal impedance
10
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single pulse
T
Duty = t/T
Rth (ch-a) = 104°C/W
0.001
100 μ
1m
10 m
100 m
Pulse width
1
tw
10
100
(s)
EAS – Tch
50
Safe operating area
(mJ)
100
100 μs *
ID max (Continuous)
Avalanche nergy
10
EAS
ID max (Pulsed) *
Drain current
ID
(A)
1 ms *
1
DC operation
Ta = 25°C
40
30
20
10
0.1
0
25
0.01
75
100
125
Channel temperature (initia)
*:Single nonrepetitive pulse
150
Tch
(°C)
Tc = 25°C
Curves
must
be
linearly
with
increase
derated
in
VDSS max
temperature.
0.001
50
0.1
1
Drain−source voltage
10
VDS
BVDSS
0V
100
IAR
−15 V
(V)
VDD
Test circuit
RG = 25 Ω
VDD = −25 V, L = 2.2 mH
5
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
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2SJ669
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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