TOSHIBA SSM3K121TU

SSM3K121TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K121TU
Power Management Switch Applications
High-Speed Switching Applications
Unit: mm
Ron = 140 mΩ (max) (@VGS = 1.5 V)
Ron = 93 mΩ (max) (@VGS = 1.8 V)
Ron = 63 mΩ (max) (@VGS = 2.5 V)
Ron = 48 mΩ (max) (@VGS = 4.0 V)
2.1±0.1
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDS
VGSS
ID
IDP
20
± 10
3.2
6.4
800
500
150
−55~150
V
V
PD (Note 1)
PD (Note 2)
Tch
Tstg
A
1
3
2
0.7±0.05
Characteristics
Drain-Source voltage
Gate-Source voltage
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.3 -0.05
1.7±0.1
0.166±0.05
1.5 V drive
Low ON-resistance:
0.65±0.05
•
•
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn-on time
Switching time
Turn-off time
Drain-Source forward voltage
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
⏐Yfs⏐
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
Min
Typ.
Max
⎯
⎯
⎯
⎯
⎯
13
⎯
⎯
1
±1
1.0
⎯
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = − 10 V
VDS = 20 V, VGS = 0
VGS = ± 10 V, VDS = 0
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 2.0 A
(Note 3)
20
12
⎯
⎯
0.35
6.5
ID = 2.0 A, VGS = 4.0 V
(Note 3)
⎯
36
48
ID = 2.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
ID = 0.5 A, VGS = 1.5 V
(Note 3)
(Note 3)
(Note 3)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
46
60
75
400
68
60
5.9
4.1
1.8
14
15
−0.85
63
93
140
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, IDS= 3.2 A
VGS = 4 V
VDD = 10 V, ID = 2 A,
VGS = 0~2.5 V, RG = 4.7 Ω
ID = −3.2 A, VGS = 0 V
(Note 3)
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Note 3: Pulse test
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SSM3K121TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
IN
0V
RG
0
10 μs
VDD = 10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
VDD
(c) VOUT
VDD
10%
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KKB
1
2
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3K121TU
ID – VDS
7
4.0 V
2.5 V
ID – VGS
10
1.8 V
1.5 V
ID
3
2
VGS = 1.2 V
1
0
Common Source
Ta = 25 °C
0
0.4
0.2
0.6
0.8
Drain - Source voltage
VDS
0.1
Ta = 100 °C
Drain current
Drain current
4
Common Source
VDS = 3 V
1
(A)
5
ID
(A)
6
0.01
25 °C
0.001
− 25 °C
0.0001
0
1.0
(V)
1.0
VGS (V)
RDS (ON) – ID
RDS (ON) – VGS
200
200
ID =2.0A
Common Source
Common Source
Ta = 25°C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
2.0
Gate - Source voltage
100
25 °C
Ta = 100 °C
100
1.5V
1.8 V
2.5 V
VGS = 4.0 V
− 25 °C
0
0
2
6
4
Gate - Source voltage
0
8
Vth (V)
Gate threshold voltage
Drain – Source on-resistance
RDS (ON) (mΩ)
ID
6
(A)
1.0
Common Source
0.5A / 1.5 V
2.0A / 2.5 V
ID = 2.0 A / VGS = 4.0 V
0
−50
4
Vth – Ta
RDS (ON) – Ta
1.0 A / 1.8 V
2
Drain current
200
100
0
VGS (V)
Common Source
VDS = 3 V
ID = 1 mA
0.8
0.6
0.4
0.2
0
0
50
Ambient temperature
100
Ta
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM3K121TU
(S)
10 VDS = 3 V
IDR – VDS
10
IDR
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
0.001
Common Source
VGS = 0 V
(A)
Common Source
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
|Yfs| – ID
30
0.1
0.01
Drain current
1
ID
G
S
0.1
0.01
100 °C
0.001
25 °C
0.0001
0
10
D
IDR
Ta = 25 °C
1
-0.2
(A)
-0.4
−25 °C
-0.6
-0.8
Drain-Source voltage
C – VDS
-1.0
VDS
-1.2
(V)
t – ID
1000
1000
Common Source
(ns)
Ciss
100
tf
10
ton
Switching time
C
t
(pF)
300
VDD = 10 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
Capacitance
100
Coss
Crss
30
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
0.1
1
10
Drain – Source voltage
1
0.01
100
VDS
tr
(V)
0.1
Drain current
1
ID
10
(A)
Dynamic Input Characteristic
10
Common
ID = 3.2A
Gate-Source voltage
VGS
(V)
Source
8
6
VDD=10V
4
VDD=16V
2
0
0
5
Total Gate Charge
15
10
Qg
(nC)
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2007-11-01
SSM3K121TU
PD – Ta
1000
600
a: Mounted on ceramic board
(25.4mm × 25.4mm
× 0.8t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
2
Cu Pad : 645 mm )
c
b
100
a
10
1
0.001
Single pulse
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
c: Mounted on FR4 Board
2
(25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm ×3)
0.01
0.1
1
Pulse width
10
tw
100
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
rth – tw
800
a
600
400
b
200
0
600
(s)
-40
120
-20
0
20
40
60
80
Ambient temperature
5
100
Ta
140 160
(°C)
2007-11-01
SSM3K121TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01