RoHS 2SC4548 2SC4548 D T ,. L SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 2 3. EMITTER Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Test R T C E L N O 3 C unless otherwise specified) Symbol Collector cut-off current 1 mW (Tamb=25℃) conditions MIN TYP MAX UNIT Ic=10µA, IE=0 400 V Ic=1mA, IB=0 400 V IE=10µA, IC=0 5 V ICBO VCB=300V, IE=0 0.1 µA IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=10V, IC=50mA Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V fT VCE=30V, IC=10mA 70 MHz Collector output capacitance Cob VCB=30V, IE=0, f=1MHz 4 pF Turn-ON Time ton VCC=150V, Ic=50mA, 0.25 µs toff IB1=-IB2=5mA 5 µs Emitter cut-off current DC current gain J E E Transition frequency W Turn-OFF Time 60 200 CLASSIFICATION OF hFE(1) Rank Range Marking WEJ ELECTRONIC CO. D E 60-120 100-200 CN Http:// www.wej.cn E-mail:[email protected]