TSM4420 Preliminary N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = 25V ID = 13.5A RDS (on), Vgs @ 10V, Ids @ 13.5A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 11A = 11mΩ Features Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Block Diagram Ordering Information Part No. TSM4420CS Packing Package Tape & Reel (2,500pcs / Reel) SOP-8 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 13.5 Pulsed Drain Current IDM 50 o Maximum Power Dissipation TA = 25 C o TA = 70 C Operating Junction Temperature PD 2 W 1.3 +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Rθjc 2.2 Rθja 50 TJ Operating Junction and Storage Temperature Range A Thermal Performance Parameter Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board TSM4420 1-3 2005/08 rev. B Unit o C/W Electrical Characteristics o TJ = 25 C, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA BVDSS 25 -- -- V VGS = 4.5V, ID = 11A RDS(ON) -- 9 11 mΩ VGS = 10V, ID = 13.5A RDS(ON) -- 7 8.5 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 -- 3.0 V Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS =10V, ID = 35A gfs -- 50 -- S Qg -- -- 25 Qgs -- 6.6 -- Qgd -- 4.0 -- td(on) -- 15 25 tr -- 11 18 td(off) -- 40 60 tf -- 12 20 IS -- -- 50 A VSD -- 0.75 1.1 V Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Dynamic Total Gate Charge Gate-Source Charge VDS = 15V, ID = 13.5A, VGS = 5V Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 15Ω, ID = 1A, V GEN = 10V, RG = 24Ω Turn-Off Fall Time nC nS Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 20A, VGS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. TSM4420 2-3 2005/08 rev. B SOP-8 Mechanical Drawing SOP-8 DIMENSION DIM MILLIMETERS MIN MAX MIN MAX A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G K TSM4420 3-3 INCHES 1.27 (typ) 0.10 o 0.05 (typ) 0.25 7 o 0.004 0 o 0.009 0 P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019 2005/08 rev. B 7 o M