MITSUBISHI MGFS45B2527B

< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
DESCRIPTION
The MGFS45B2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
 High output power
Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz
 High power gain
GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz
 Distortion
EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm
EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm
RECOMMENDED BIAS CONDITIONS
 VDS=12V  ID=0.9A  RG=10ohm
Absolute maximum ratings
Symbol
Keep Safety first in your circuit designs!
(Ta=25C)
Ratings
Unit
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-10
V
MAXID
Maximum drain current
10
A
PT *1
Total power dissipation
78
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-55 to +150
C
VGDO
Parameter
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
VGS(off)
Po(SAT)
Gate to source cut-off voltage
VDS=3V,ID=100mA
Output Power
VDS=12V,ID(RF off)=0.9A
GLP
Power Gain
VDS=12V,ID(RF off)=0.9A
ID
Drain current
f=2.5 – 2.7GHz ,Pout=34dBm
EVM *2
Error Vector Magnitude
Rth(ch-c) *3
Thermal resistance
Unit
Typ.
Max.
-0.5
-
-3.0
V
-
45
-
dBm
10.0
12.5
-
dB
-
1.2
1.5
A
-
1.0
2.0
%
-
1.2
1.9
C/W
f=2.5 – 2.7GHz
delta Vf method
*2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth:6MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
MGFS45B2527B TYPICAL CHARACTERISTICS
EVM,GP,ED(@WiMAX) vs. Pout
Test Condition
Vds=12V,Idq=0.9A,Ta=25deg.C
WiMAX:64QAM-3/4,Bw=6MHz
EVM,Gain(@WiMAX) vs. f
Test Condition
Vds=12V,Idq=0.9A,Pout=34dBm,Ta=25deg.C
WiMAX:64QAM-3/4,Bw=6MHz
Publication Date : Apr., 2011
2
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
MGFS45B2527B RF TEST FIXTURE
Publication Date : Apr., 2011
3
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
4