EMH2308 Ordering number : ENA1445A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Unit --20 V ±10 V --3 A --20 A 1.0 W Total Dissipation PD PT 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7045-002 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2308-TL-H 5 Packing Type : TL Marking MH 2.1 1.7 8 TL 1 Lot No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Electrical Connection 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 71112 TKIM/41509PE MSIM TC-00001891 No. A1445-1/7 EMH2308 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.0A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --20 V --0.4 2.1 --1 μA ±10 μA --1.3 3.6 V S 65 85 mΩ 98 137 mΩ 155 235 mΩ 320 pF 66 pF Crss 50 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 21 ns 37 ns Turn-OFF Delay Time Fall Time VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V 32 ns 4.0 nC 0.6 nC 1.1 nC --0.83 --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --1.5A RL=6.67Ω VIN D PW=10μs D.C.≤1% VOUT G EMH2308 P.G 50Ω S Ordering Information Device EMH2308-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1445-2/7 EMH2308 ID -- VDS --2.0 .8 V --5.0 --4.5 --1 --8V --3.5 V --2.5 V --2.5 --10V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A --1A 120 --3A 90 60 30 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V C 25 °C --1.0A , I D= V 5 . 2 = -VGS .0A I = --3 --4.5V, D = V GS 120 100 80 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT14536 IS -- VSD 7 5 VGS=0V 2 3 2 = Ta 5 --2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 140 3 °C °C 75 1.0 °C 25 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --0.5 --0.6 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 --0.01 --0.3 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 10 td(on) 7 --0.9 --1.0 --1.1 IT14538 f=1MHz 5 Ciss 3 7 --0.8 Ciss, Coss, Crss -- VDS 7 2 100 --0.7 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4.5V 3 --0.4 IT14537 SW Time -- ID 5 Switching Time, SW Time -- ns = VGS = --0 V, I D --1.8 Ambient Temperature, Ta -- °C 5 0.1 --0.01 160 0 --60 --40 --8 VDS= --10V 7 .5A 180 IT14535 | yfs | -- ID 10 200 25° C --2 5°C 0 220 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 IT14534 RDS(on) -- Ta 240 210 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 150 0 IT14533 RDS(on) -- VGS 240 --1.5 --0.5 VGS= --1.2V --0.1 --2.0 --1.0 --0.5 0 --2.5 --25 ° --1.5V --3.0 75° C --1.0 --3.5 Ta= Drain Current, ID -- A V --1.5 0 ID -- VGS VDS= --10V --4.0 --4. 5 Drain Current, ID -- A --3.0 2 100 Coss Crss 7 5 5 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14539 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14540 No. A1445-3/7 EMH2308 VGS -- Qg --4.0 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 PD -- Ta 1.4 4.0 4.5 IT14541 PW≤10μs ID= --3A 10 0μ 1m s s 10 DC op ms 10 0m s era tio n( Ta = 3 2 --0.5 0 IDP= --20A --1.0 7 5 --1.0 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W --10 7 5 3 2 --0.1 7 5 0 ASO 5 VDS= --10V ID= --3A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14542 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 To t 0.8 al 0.6 1u di ss ni t ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14543 No. A1445-4/7 EMH2308 Embossed Taping Specification EMH2308-TL-H No. A1445-5/7 EMH2308 Outline Drawing EMH2308-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1445-6/7 EMH2308 Note on usage : Since the EMH2308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A1445-7/7