STD85N3LH5 STP85N3LH5 - STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STD85N3LH5 30 V < 0.005 Ω 80 A STP85N3LH5 30 V < 0.0054 Ω 80 A STU85N3LH5 30 V < 0.0054 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 3 3 1 2 1 DPAK IPAK 3 1 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD85N3LH5 85N3LH5 DPAK Tape and reel STP85N3LH5 85N3LH5 TO-220 Tube STU85N3LH5 85N3LH5 IPAK Tube September 2008 Rev 5 1/16 www.st.com 16 Contents STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/16 ................................................ 8 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-source voltage ± 22 V ID (1) Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 55 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 70 W Derating factor 0.47 W/°C Single pulse avalanche energy 165 mJ -55 to 175 °C 175 °C Value Unit EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj 3/16 Electrical characteristics 2 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Drain-source breakdown Voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS = VGS, ID = 250 µA VGS = 5 V, ID = 40 A VGS = 5 V, ID = 40 A Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 RG 4/16 µA µA ±100 nA 2.5 V 0.005 Ω 0.0046 0.0054 Ω 0.0052 0.0065 Ω 0.0058 0.0071 Ω 0.042 SMD version Table 5. 1 10 1 VGS = 10 V, ID = 40 A Unit V VDS = 20 V,Tc = 125 °C SMD version Static drain-source on resistance Max. 30 VGS = 10 V, ID = 40 A RDS(on) Typ. VDS = 20 V IDSS VGS(th) Min. Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions Min Typ. Max. Unit 1850 380 58 pF pF pF (see Figure 16) 14 6.8 4.7 nC nC nC VDD = 15 V, ID = 80 A 2.3 nC VDS = 25 V, f=1 MHz, VGS = 0 VDD = 15 V, ID = 80 A Total gate charge Gate-source charge Gate-drain charge VGS = 5 V Pre Vth gate-to-source charge Post Vth gate-to-source charge VGS = 5 V (see Figure 19) 4.5 nC Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain 1.2 Ω STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V (see Figure 15) Typ. Max. Unit 6 14 ns ns 23.6 10.8 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V (see Figure 17) 31.8 26.1 1.6 Max. Unit 80 320 A A 1.1 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/16 Electrical characteristics STD85N3LH5 - STP85N3LH5 - STU85N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/16 Test circuit 3 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Test circuit Figure 13. Unclamped inductive load test circuit Figure 14. Unclamped inductive waveform Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Switching time waveform switching and diode recovery times 8/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Test circuit Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd 9/16 Package mechanical data 4 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STD85N3LH5 - STP85N3LH5 - STU85N3LH5 TO-251 (IPAK) mechanical data mm. DIM. A min. typ max. 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 13/16 Packaging mechanical data 5 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 19-Oct-2007 1 First release 20-Feb-2008 2 Minor text changes to improve readability 21-Jul-2008 3 – – – – 20-Aug-2008 4 Added max value on VGS(th) (Table 4) 25-Sep-2008 5 VGS values has been changed on Table 2 and Table 4 Added new package, mechanical data: TO-220 Figure 2: Safe operating area has been corrected Figure 7: Static drain-source on resistance updated New value on Table 2: Absolute maximum ratings 15/16 STD85N3LH5 - STP85N3LH5 - STU85N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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