STMICROELECTRONICS STRH100N6

STRH100N6
Rad-Hard N-channel, 60 V, 80 A Power MOSFET
Features
VDSS
ID
RDS(on)
Qg
60 V
80 A
12 mΩ
134.4 nC
■
Fast switching
■
100% avalanche tested
■
Hermetic package
■
70 krad TID
■
SEE radiation hardened
3
1
TO-254AA
Applications
■
Satellite
■
High reliability
2
Figure 1.
Internal schematic diagram
Description
This N-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
Table 1.
Device summary
Part numbers
ESCC part
number
Quality level
Package
Lead
finish
STRH100N6HY1
-
Engineering
model
TO-254AA
Gold
STRH100N6HYG
Note:
TBD
Mass (g) Temp. range
EPPL
-
ESCC flight
10
-55 to 150 °C
Target
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 18353 Rev 3
1/18
www.st.com
18
Contents
STRH100N6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Electrical characteristics (curves)
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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. . . . . . . . . . . . . . . . . . . . . . . . . . 10
STRH100N6
1
Electrical ratings
Electrical ratings
(TC= 25 °C unless otherwise specified)
Table 2.
Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
Value
Unit
VDS(1)
Drain-source voltage (VGS = 0)
60
V
VGS(2)
Gate-source voltage
±20
V
Drain current (continuous) at TC= 25 °C
80
A
Drain current (continuous) at TC= 100 °C
50
A
Drain current (pulsed)
320
A
PTOT (3)
Total dissipation at TC= 25 °C
176
W
dv/dt (5)
Peak diode recovery voltage slope
2.5
V/ns
-55 to 150
°C
150
°C
ID (3)
ID
(3)
IDM
(4)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
2. This value is guaranteed over the full range of temperature.
3. Rated according to the Rthj-case + Rthc-s.
4. Pulse width limited by safe operating area.
5. ISD ≤ 80 A, di/dt ≤ 600 A/µs, VDD = 80 %V(BR)DSS.
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
0.50
°C/W
0.21
°C/W
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
40
A
EAS(1)
Single pulse avalanche energy
(starting Tj= 25 °C, Id= Iar, Vdd=40 V)
954
mJ
EAS
Single pulse avalanche energy
(starting Tj= 110 °C, Id= Iar, Vdd=40 V)
280
mJ
EAR
Repetitive avalanche
(Vdd = 40 V, IAR = 40 A, f = 10 KHz,
TJ = 25 °C, duty cycle = 50%)
40
mJ
Rthj-case Thermal resistance junction-case max
Rthc-s
Table 4.
Symbol
IAR
Case-to-sink typ
Avalanche characteristics
Parameter
Doc ID 18353 Rev 3
3/18
Electrical ratings
Table 4.
STRH100N6
Avalanche characteristics (continued)
Symbol
EAR
Parameter
Value
Unit
Repetitive avalanche
(Vdd = 40 V, IAR = 40 A, f = 100 KHz,
TJ = 25 °C, duty cycle = 10%)
24
mJ
Repetitive avalanche
(Vdd = 40 V, IAR = 40 A, f = 100 KHz,
TJ = 110 °C, duty cycle = 10%)
7.7
mJ
1. Maximum rating value.
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STRH100N6
2
Electrical characteristics
Electrical characteristics
(TC = 25°C unless otherwise specified).
Pre-irradiation
Table 5.
Symbol
Pre-irradation on/off states
Parameter
Test conditions
Min.
Max.
Unit
10
µA
100
-100
nA
nA
V
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
BVDSS(1)
Drain-to-source breakdown
voltage
VGS = 0 V, ID = 1 mA
60
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1 mA
2
RDS(on)
Static drain-source on
resistance
VGS = 12 V
ID = 40 A
Typ.
80% BVDss
VGS = 20 V
VGS = - 20 V
4.5
0.012 0.0135
V
Ω
1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
Table 6.
Symbol
Pre-irradation dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 25 V,
f=1MHz
3916
864
325
4895
1080
407
5874
1296
488
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 30 V, ID = 80 A,
VGS=12 V
107
22
34
134.4
32.5
46.5
161
43
59
nC
nC
nC
RG(2)
Gate input resistance
f=1MHz Gate DC bias=0
test signal level= 20 mV
open drain
1.6
2
2.4
Ω
Ciss
Coss(1)
Crss
1. This value is guaranteed over the full range of temperature.
2. Not tested, guaranteed by process.
Doc ID 18353 Rev 3
5/18
Electrical characteristics
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Symbol
STRH100N6
Pre-irradation switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 30 V, ID = 40 A,
RG = 4.7 Ω, VGS = 12 V
Typ.
Max.
Unit
22
90
62
45
28
115
86
69
34
140
110
93
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
80
320
A
A
Pre-irradation source drain diode(1)
Parameter
Test conditions
ISD
ISDM (2)
Source-drain current
Source-drain current (pulsed)
VSD (3)
Forward on voltage
ISD = 80 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, di/dt = 100
A/µs
VDD= 48 V, Tj = 25 °C
307
384
4.7
24.6
461
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs
VDD= 48 V, Tj = 150 °C
370
462.4
6.5
28.3
555
ns
µC
A
trr(4)
Qrr(4)
IRRM(4)
trr(4)
Qrr(4)
IRRM(4)
1. Refer to Table 16: Source drain diode.
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4. Not tested in production, guaranteed by process.
6/18
Min.
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1.1
V
STRH100N6
3
Radiation characteristics
Radiation characteristics
The technology of STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to
radiative environments. Every manufacturing lot is tested for total ionizing dose (irradiation
done according to the ESCC 22900 specification, window 1.) using the TO-3 package. Both
pre-irradiation and post-irradiation performance are tested and specified using the same
circuitry and test conditions in order to provide a direct comparison.
(Tamb= 22 ± 3 °C unless otherwise specified).
Total dose radiation (TID) testing
One bias conditions using the TO-3 package:
–
VGS bias: + 15 V applied and VDS= 0 V during irradiation
The following parameters are measured (see Table 9, Table 10 and Table 11):
●
before irradiation
●
after irradiation
●
after 24 hrs @ room temperature
●
after 168 hrs @ 100 °C anneal
Table 9.
Symbol
Post-irradiation on/off states @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))
Parameter
Test conditions
Drift values ∆
Unit
IDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
+10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
VGS = -20 V
1.5
-1.5
nA
BVDSS
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
-15%
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
-60%/ + 25%
V
RDS(on)
Static drain-source on resistance
VGS = 10 V; ID = 40 A
±15 %
Ω
Table 10.
Symbol
Qg
Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))
Parameter
Test conditions
Drift values ∆
Unit
-5% / +50%
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
IG = 1 mA, VGS = 12 V,
VDS = 30 V, IDS = 40 A
±35 %
nC
-5% / +110%
Doc ID 18353 Rev 3
7/18
Radiation characteristics
STRH100N6
Source drain diode post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K
Rad(Si))(1)
Table 11.
Symbol
Parameter
VSD (2)
Test conditions
Forward on voltage
Drift values ∆.
Unit
± 5%
V
ISD = 50 A, VGS = 0
1. Refer to Figure 16.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Single event effect, SOA
The technology of the STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect (irradiation per MIL-STD-750E, method
1080 bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have
been performed with a fluence of 3e+5 ions/cm².
The accept/reject criteria are:
●
SEB test: drain voltage checked, trigger level is set to Vds = - 2 V. Stop condition: as
soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².
●
SEGR test: the gate current is monitored every 100 ms. A gate stress is performed
before and after irradiation. Stop condition: as soon as the gate current reaches 1 mA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².
The results are:
Table 12.
–
no SEB
–
SEGR test produces the following SOA (see Table 12: Single event effect (SEE),
safe operating area (SOA) and Figure 2: Single event effect, SOA)
Single event effect (SEE), safe operating area (SOA)
Ion Let (Mev/(mg/cm2)
Kr
8/18
32
Energy Range
(MeV)
(µm)
768
94
VDS (V)
@VGS=0 @VGS= -2 V @VGS= -5 V @VGS= -10 V @VGS= -20 V
60
48
Doc ID 18353 Rev 3
39
27
15
STRH100N6
Radiation characteristics
Figure 2.
Single event effect, SOA
+R-E6CM£MG
6DS6DSMAX
6GS6
Figure 3.
Single event effect, bias circuit(a)
6DS
6GS
5
2
#
2
N&
#
—&
#
P&
!-V
a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .
Doc ID 18353 Rev 3
9/18
Electrical characteristics (curves)
STRH100N6
4
Electrical characteristics (curves)
Figure 4.
Safe operating area
Figure 5.
Thermal impedance
Figure 7.
Transfer characteristics
AM07261v1
ID
(A)
is
ea
ar (on)
s
S
i
th RD
in ax
ion y m
t
a
er d b
Op mite
Li
100
100µs
1ms
10
10ms
Sinlge
pulse
1
0.1
0.1
Figure 6.
ID
(A)
350
10
1
VDS(V)
Output characteristics
HV32910
VGS=10V
AM07260V1
ID
(A)
VDS= 1.3 V
7V
300
100
250
200
TJ= +150 °C
6V
150
TJ= 25 °C
10
100
50
0
0
10/18
5V
5
10
TJ= -55 °C
VDS(V)
Doc ID 18353 Rev 3
1
3.5 4.0
4.5
5.0
5.5
6.0
VGS(V)
STRH100N6
Figure 8.
Electrical characteristics (curves)
Gate charge vs gate-source voltage Figure 9.
AM00892v1
VGS
(V)
Capacitance variations
HV32930
C
(pF)
VDS=30 V
7000
12
6000
Ciss
5000
8
ID=80 A
4000
3000
4
0
0
20
40
2000
ID=20 A
ID=40 A
Crss
Coss
1000
60
80 100 120
0
Qg(nC)
0
10
20
30
40
50 VDS(V)
Figure 10. Normalized BVDSS vs temperature
Figure 11. Static drain-source on resistance
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Doc ID 18353 Rev 3
11/18
Electrical characteristics (curves)
STRH100N6
Figure 14. Source drain-diode forward
characteristics
12/18
Doc ID 18353 Rev 3
STRH100N6
5
Test circuits
Test circuits
Figure 15. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
Figure 16. Source drain diode
)&-BODYDIODEFORWARDCURRENT
DIDT
TRR
;=OF)2-
"ODYDIODEREVERSECURRENT) 2A
B
!-6
Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)
Doc ID 18353 Rev 3
13/18
Package mechanical data
6
STRH100N6
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 13.
TO-254AA mechanical data
mm
Inch
Dim.
Min.
Max.
Min.
Typ.
Max.
A
13.59
13.84
0.535
0.545
B
13.59
13.84
0.535
0.545
C
20.07
20.32
0.790
0.800
D
6.32
6.60
0.249
0.260
E
1.02
1.27
0.040
0.050
F
3.56
3.81
0.140
0.150
G
16.89
17.40
0.665
0.685
H
I
6.86
0.89
1.02
0.270
1.14
0.035
0.040
J
3.81
0.150
K
3.81
0.150
L
12.95
14.50
M
2.92
3.18
N
0.71
R1
1.00
R2
14/18
Typ.
1.52
1.65
1.78
Doc ID 18353 Rev 3
0.510
0.045
0.571
0.039
0.060
0.065
0.070
STRH100N6
Package mechanical data
Figure 18. TO-254AA drawing
Doc ID 18353 Rev 3
15/18
Order codes
STRH100N6
7
Order codes
Table 14.
Ordering information
Order codes
ESCC part
number
Quality
level
EPPL
STRH100N6HY1
-
Engineer
model
-
STRH100N6HYG
TBD
Package
TO-254AA
ESCC flight Target
Lead
finish
Gold
Marking
STRH100N6FSY1
+ BeO
Packing
Strip
pack
TBD
Contact ST sales office for information about the specific conditions for products in die form and for other
packages.
16/18
Doc ID 18353 Rev 3
STRH100N6
8
Revision history
Revision history
Table 15.
Document revision history
Date
Revision
Changes
04-Jan-2011
1
First release.
27-Jul-2011
2
Updated order codes in Table 1: Device summary and Table 14:
Ordering information.
Minor text changes.
09-Nov-2011
3
Updated dynamic values on Table 6: Pre-irradation dynamic and
Table 7: Pre-irradation switching times.
Doc ID 18353 Rev 3
17/18
STRH100N6
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