STMICROELECTRONICS STRH40P10

STRH40P10
Rad-Hard P-channel 100 V, 34 A Power MOSFET
Features
VBDSS
ID
RDS(on)
Qg
100 V
34 A
0.060 Ohm
162 nC
■
Fast switching
■
100% avalanche tested
■
Hermetic package
■
100 krad TID
■
SEE radiation hardened
3
1
2
TO-254AA
Applications
■
Satellite
■
High reliability
Figure 1.
Internal schematic diagram
D (1)
Description
This P-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.
G (3)
S (2)
SC06140p
Table 1.
Device summary
Part number
ESCC part
number
STRH40P10HY1
-
STRH40P10HYG
Note:
TBD
Quality
level
Package
Engineering
model
TO-254AA
ESCC flight
Lead
finish
Mass (g)
Gold
10
Temp. range EPPL
-55 to 150°C
Target
Contact ST sales office for information about the specific conditions for product in die form
and for other packages.
November 2011
Doc ID 18354 Rev 6
1/18
www.st.com
18
Contents
STRH40P10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Electrical characteristics (curves)
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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. . . . . . . . . . . . . . . . . . . . . . . . . . 10
STRH40P10
1
Electrical ratings
Electrical ratings
(TC= 25 °C unless otherwise specified).
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
Table 2.
Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
Value
Unit
VDS (1)
Drain-source voltage (VGS = 0)
100
V
VGS (2)
Gate-source voltage
±20
V
Drain current (continuous)
34
A
Drain current (continuous) at TC= 100 °C
21
A
Drain current (pulsed)
136
A
Total dissipation
176
W
Peak diode recovery voltage slope
2.5
V/ns
ID
(3)
ID (3)
IDM
(4)
PTOT
(3)
dv/dt (5)
Tstg
TJ
Storage temperature
°C
- 55 to 150
Operating junction temperature
°C
1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
2. This value is guaranteed over the full range of temperature.
3. Rated according to the Rthj-case + Rthc-s.
4. Pulse width limited by safe operating area.
5. ISD ≤40 A, di/dt ≤100 A/µs, VDD = 80% V(BR)DSS.
Table 3.
Thermal data
Symbol
Value
Unit
Thermal resistance junction-case max
0.71
°C/W
Case-to-sink typ
0.21
°C/W
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
TBD
A
EAS(1)
Single pulse avalanche energy
(starting TJ=25 °C, ID= 17 A, VDD=50 V)
1133
mJ
EAS
Single pulse avalanche energy
(starting TJ=110 °C, ID= 17 A, VDD=50 V)
332
mJ
Rthj-case
Rthc-s
Table 4.
Symbol
IAR
Parameter
Avalanche characteristics
Parameter
Doc ID 18354 Rev 6
3/18
Electrical ratings
Table 4.
STRH40P10
Avalanche characteristics (continued)
Symbol
EAR
Parameter
Value
Repetitive avalanche
(Vdd = 50 V, IAR = 24 A, f = 100 KHz, TJ = 25 °C,
duty cycle = 10%)
25
mJ
Repetitive avalanche
(Vdd = 50 V, IAR = 17 A, f = 100 KHz, TJ = 110
°C, duty cycle = 10%)
1. Maximum rating value.
4/18
Unit
Doc ID 18354 Rev 6
8
STRH40P10
2
Electrical characteristics
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
Pre-irradiation
Table 5.
Symbol
Pre-irradiation on/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
10
µA
100
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
IGSS
Gate body leakage current
(VDS = 0)
VGS = 20 V
VGS = -20 V
-100
nA
nA
BVDSS (1)
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
100
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
RDS(on)
Static drain-source on
resistance
VGS = 12 V; ID = 17 A
2
0.060
4.5
V
0.075
Ω
1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).
Table 6.
Symbol
Ciss
Coss (1)
Crss
Qg
Qgs
Qgd
RG(1)
Pre-irradiation dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0, VDS = 25 V,
f=1 MHz
3710
510
204
4640
635
255
5570
760
306
pF
pF
pF
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 50 V, ID = 34 A,
VGS=12 V
130
14
32
162
18
40
194
22
48
nC
nC
nC
Gate input resistance
f=1MHz gate DC bias=0
test signal level=20mV
open drain
Ω
1.5
1. Not tested, guaranteed by process.
Table 7.
Symbol
td(on)
tr
td(off)
tf
Pre-irradiation switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 50 V, ID = 17 A,
RG = 4.7 Ω, VGS = 12 V
Doc ID 18354 Rev 6
Min.
Typ.
Max
Unit
15
19
68
34
24
31
129
46
33
43
190
58
ns
ns
ns
ns
5/18
Electrical characteristics
Table 8.
Symbol
ISD
ISDM
(2)
VSD (3)
trr(4)
Qrr(4)
IRRM(4)
trr(4)
Qrr(4)
IRRM(4)
STRH40P10
Pre-irradiation source drain diode (1)
Parameter
Test conditions
Typ.
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 30 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 40 A/µs
VDD= 12 V, TJ = 25 °C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 40 A/µs
VDD= 12 V, TJ = 150 °C
1. Refer to the Figure 16.
2. Pulse width limited by safe operating area.
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
4. Not tested in production, guaranteed by process.
6/18
Min.
Doc ID 18354 Rev 6
Max
Unit
34
136
A
A
1.1
276
345
4.1
316
473
7.1
133
V
414
ns
µC
A
ns
µC
A
STRH40P10
3
Radiation characteristics
Radiation characteristics
The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose
(irradiation done according to the ESCC 22900 specification, window 1) using the TO-3
package. Both pre-irradiation and post-irradiation performances are tested and specified
using the same circuitry and test conditions in order to provide a direct comparison.
(Tamb= 22 ± 3 °C unless otherwise specified).
Total dose radiation (TID) testing
One bias conditions using the TO-3 package:
–
VGS bias: + 20 V applied and VDS= -100 V during irradiation
The following parameters are measured (see Table 9, Table 10 and Table 11):
●
before irradiation
●
after irradiation
●
after 24 hrs @ room temperature
●
after 168 hrs @ 100 °C anneal
Table 9.
Symbol
Post-irradiation on/off states @ TJ= 25 °C, (Co60 γ rays 100 K Rad(Si))
Parameter
Test conditions
Drift values ∆
Unit
IDSS
Zero gate voltage drain current
(VGS = 0)
80% BVDss
+1
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = 12 V
VGS = -12 V
1.5
-1.5
µA
BVDSS
Drain-to-source breakdown
voltage
VGS = 0, ID = 1 mA
+5%
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
+150%
V
RDS(on)
Static drain-source on resistance
VGS = 10 V; ID = 20 A
-4% / +35%
Ω
Table 10.
Symbol
Qg
Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 100 K Rad(Si)) (1)
Parameter
Test conditions
Drift values ∆
Unit
-15% / +5%
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
IG = 1 mA, VGS = 12 V,
VDS = 50 V, IDS = 20 A
-5% / +200%
nC
-10% / +100%
1. Parameter not measured after irradiation but guaranteed by the results obtained during the evaluation
phase that proves this parameter is directly correlated to the VGS(th) shift.
Doc ID 18354 Rev 6
7/18
Radiation characteristics
STRH40P10
Source drain diode post-irradiation @ TJ= 25 °C, (Co60 γ rays 100 K
Rad(Si))(1)
Table 11.
Symbol
Parameter
VSD (2)
Test conditions
Forward on voltage
Drift values ∆.
Unit
± 5%
V
ISD = 40 A, VGS = 0
1. Refer to Figure 16.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Single event effect, SOA
The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect (irradiation per MIL-STD-750E, method
1080 bias circuit in Figure 3: Single event effect, bias circuit). SEB and SEGR tests have
been performed with a fluence of 3e+5 ions/cm².
The accept/reject criteria are:
●
SEB test: drain voltage checked, trigger level is set to Vds = - 5 V. Stop condition: as
soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².
●
SEGR test: the gate current is monitored every 200 ms. A gate stress is performed
before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².
The results are:
Table 12.
–
no SEB
–
SEGR test produces the following SOA (see Table 12: Single event effect (SEE),
safe operating area (SOA) and Figure 2: Single event effect, SOA)
Single event effect (SEE), safe operating area (SOA)
Ion Let (Mev/(mg/cm2)
Kr
8/18
Energy Range
(MeV)
(µm)
VDS (V)
@VGS=0 @VGS= 2 V
@VGS= 5 V
@VGS= 10 V
@VGS= 15 V
768
94
-
-60
-
-
-
756
92
-
-
-
-
-20
32
Doc ID 18354 Rev 6
STRH40P10
Radiation characteristics
Figure 2.
Single event effect, SOA
.U0H9FPðPJ
9GV9GVPD[
9JV9
Figure 3.
Single event effect, bias circuit(a)
a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .
Doc ID 18354 Rev 6
9/18
Electrical characteristics (curves)
STRH40P10
4
Electrical characteristics (curves)
Figure 4.
Safe operating area
Thermal impedance
Figure 7.
Transfer characteristics
HV32530v1
ID
(A)
100
Figure 5.
Tj=150°C
Tc=25°C
Sinlge
pulse
100µs
Operation in this area is
Limited by max RDS(on)
10
1ms
10ms
1
DC operation
0.1
0.1
Figure 6.
10
1
100
VDS(V)
Output characteristics
HV32500v1
ID
(A)
140
VGS= 12 V
HV32505v1
ID
(A)
Vds = 3 V
100
120
80
5V
100
TJ = 150 °C
80
60
60
TJ = 25 °C
40
4V
40
20
20
TJ = -55 °C
0
0
Figure 8.
5
10
15
0
0
VDS(V)
Gate charge vs gate-source voltage Figure 9.
HV32510v1
-VGS
(V)
VDD=50 V
10
2
4
8
6
10 VGS(V)
Capacitance variations
HV32520v1
C
(pF)
6100
5100
8
Ciss
4100
6
3100
4
2
Crss
1100
Coss
100
0
0
10/18
2100
ID= -34 A
ID= -17 A
ID= -8.5 A
20
60
100
140
Qg(nC)
Doc ID 18354 Rev 6
0
20
40
60
80
VDS(V)
STRH40P10
Electrical characteristics (curves)
Figure 10. Normalized BVDSS vs temperature
Figure 11. Static drain-source on resistance
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Figure 14. Source drain-diode forward
characteristics
Doc ID 18354 Rev 6
11/18
Test circuits
5
STRH40P10
Test circuits
Figure 15. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
Figure 16. Source drain diode
12/18
Doc ID 18354 Rev 6
STRH40P10
Test circuits
Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)
Doc ID 18354 Rev 6
13/18
Package mechanical data
6
STRH40P10
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 13.
TO-254AA mechanical data
mm
Inch
Dim.
Min.
Max.
Min.
Typ.
Max.
A
13.59
13.84
0.535
0.545
B
13.59
13.84
0.535
0.545
C
20.07
20.32
0.790
0.800
D
6.32
6.60
0.249
0.260
E
1.02
1.27
0.040
0.050
F
3.56
3.81
0.140
0.150
G
16.89
17.40
0.665
0.685
H
I
6.86
0.89
1.02
0.270
1.14
0.035
0.040
J
3.81
0.150
K
3.81
0.150
L
12.95
14.50
M
2.92
3.18
N
0.71
R1
1.00
R2
14/18
Typ.
1.52
1.65
1.78
Doc ID 18354 Rev 6
0.510
0.045
0.571
0.039
0.060
0.065
0.070
STRH40P10
Package mechanical data
Figure 18. TO-254AA drawing
Doc ID 18354 Rev 6
15/18
Order codes
STRH40P10
7
Order codes
Table 14.
Ordering information
Order code
ESCC part
number
Quality
level
EPPL
STRH40P10HY1
-
Engineering
model
-
STRH40P10HYG
TBD
Package
Lead
finish
Marking
Packing
TO-254AA
Gold
TBD
Strip
pack
ESCC flight Target
Contact ST sales office for information about the specific conditions for products in die form and for other
packages.
16/18
Doc ID 18354 Rev 6
STRH40P10
8
Revision history
Revision history
Table 15.
Document revision history
Date
Revision
Changes
23-Dec-2010
1
First release.
02-Feb-2011
2
Updated Figure 1.
03-May-2011
3
Updated Figure 1.
22-Jun-2011
4
Updated features on coverpage.
25-Jul-2011
5
Updated order codes in Table 1: Device summary and Table 14:
Ordering information.
Minor text changes.
09-Nov-2011
6
Updated dynamic values on Table 6: Pre-irradiation dynamic,
Table 7: Pre-irradiation switching times and Table 8: Pre-irradiation
source drain diode.
Doc ID 18354 Rev 6
17/18
STRH40P10
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