s,ttii -(lonau.cko\ i, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistors 2SC2331 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V Collector current 2.0 A Collector current-Peak 4.0 A IB Base current 1.0 A PT Total power dissipation Ic I CM Ta=25: 1.5 Tc=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55-150 B C E Fig.1 simplified outline (TO-220) and symbol NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before phicing orders. CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage lc=1.0A,lB=0.1A,L=1mH VcEsat Collector-emitter saturation voltage lc=1A; IB=0.1A 0.6 V VsEsat Base-emitter saturation voltage IC=1A;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 MA IEBO Emitter cut-off current VEB=5V; lc=0 10 UA hpE-1 DC current gain lc=0.1A;VCE=5V 40 hpE-2 DC current gain lc=1 A ; VCE=5V 40 100 V 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=1.0AIB1=-IB2=0.1A RL=50n;Vcc!B50V 10.00 .300+0.01 8.76 2.80 0.00 3.75 I ??' OAS J f p \£ ^/ n1 iS 1.3S •~~ (WO^ - \£$ 830 13.00 •-T 30.00< 15SO V 1.20 ertAu. ^••*>v nr ' J r IJ 5 80 Z6L3O J 50 5 I J 0.45*0.01 2.60_ — 0.5 MS 1'a MS 0.5 MS