ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit --12 V ±10 V --3.5 A --30 A When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C PW≤10μs, duty cycle≤1% This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8671-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TS 5 2.3 4 1 0.65 0.9 0.25 LOT No. TL Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 t o 0.02 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7 ECH8671 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 2.7 --10 μA ±10 μA --1.3 4.6 V S 59 77 mΩ 90 126 mΩ 145 215 mΩ 330 pF 110 pF Crss 88 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 30 ns 31 ns Turn-OFF Delay Time Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--3.5A 32 ns 3.9 nC 0.6 nC 1.1 IS=--3.5A, VGS=0V --0.85 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1.5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8671 P.G 50Ω S Ordering Information Device ECH8671-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1456-2/7 ECH8671 ID -- VDS --1 .8V --5.0 --1.5V --0.5 --2.0 --1.5 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 160 ID= --0.5A --1A 100 --1.5A 80 60 40 20 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 25 = -- °C Ta 2 1.0 °C 75 C 25° 7 5 3 2 0.1 7 --0.01 180 5A 140 120 A = --1.0 V, I D --2.5 V GS= 100 = --1.5A 4.5V, I D V GS= -- 80 60 40 20 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 20 40 60 80 100 120 140 160 IT14575 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT14577 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 3 0 VGS=0V --0.01 --0.3 5 7 --10 IT14576 SW Time -- ID 5 --20 IS -- VSD 3 2 2 --3.0 IT14573 = --0. 8V, I D . 1 -= VGS 160 --10 7 5 Source Current, IS -- A 3 --2.5 Ambient Temperature, Ta -- °C 10 7 5 --2.0 200 0 --60 --40 --8 VDS= --6V 2 --1.5 RDS(on) -- Ta IT14574 | yfs | -- ID 3 --1.0 220 180 120 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 140 0 IT14572 RDS(on) -- VGS 200 25° C --0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --2.5 5°C 25° C --25 °C --0.1 220 Forward Transfer Admittance, | yfs | -- S --3.0 Ta= 7 0 Drain-to-Source Voltage, VDS -- V f=1MHz 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --3.5 --1.0 VGS= --1.2V 0 --4.0 --25 °C --1.0 --4.5 Ta= 75° C Drain Current, ID -- A --1.5 0 VDS= --10V --5.5 --4. 5 --2.0 ID -- VGS --6.0 V --10V --8V --2.5 Drain Current, ID -- A --3.5V --2.5 V --3.0 100 7 5 td(off) 3 tf 2 tr 10 td(on) 7 Ciss 3 2 Coss 100 5 2 --0.01 Crss 7 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14578 5 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT14579 No. A1456-3/7 ECH8671 VGS -- Qg 7 5 3 2 VDS= --6V ID= --3A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta 4.5 IT14580 ID= --3.5A DC op era tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 10 0μ 1m s s 10 10 ms 0m s IDP= --30A n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14638 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 1.4 1.3 1.2 1.0 al t To di 0.8 n t io ni 0.6 at ip 1u ss Allowable Power Dissipation, PD -- W 1.6 4.0 --10 7 5 3 2 ASO 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14639 No. A1456-4/7 ECH8671 Embossed Taping Specification ECH8671-TL-H No. A1456-5/7 ECH8671 Outline Drawing ECH8671-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1456-6/7 ECH8671 Note on usage : Since the ECH8671 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1456-7/7