MCH6601 Ordering number : EN6458C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.2 A --0.8 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Product & Package Information Package Dimensions • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 MCH6601-TL-E Packing Type : TL Marking 4 FA LOT No. LOT No. 0 t o 0.02 2.1 1.6 0.25 unit : mm (typ) 7022A-006 1 2 3 0.65 0.07 1 6 2 5 Electrical Connection 0.3 0.85 0.25 TL 3 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 1 2 3 SANYO : MCPH6 http://semicon.sanyo.com/en/network 70412 TKIM/42806 MSIM TB-00002289/O3105PE MSIM TB-00001865/N2499 TSIM TA-2457 No.6458-1/7 MCH6601 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS VGS(off) | yfs | Cutoff Voltage Forward Transfer Admittance RDS(on)1 Static Drain-to-Source On-State Resistance Input Capacitance Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±8V, VDS=0V --30 VDS=--10V, ID=--100μA VDS=--10V, ID=--50mA --0.4 RDS(on)2 ID=--50mA, VGS=--4V ID=--30mA, VGS=--2.5V RDS(on)3 ID=--1mA, VGS=--1.5V 80 Ciss max Unit V --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) tr 24 ns 55 ns 120 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--100mA 130 ns 1.43 nC 0.18 nC 0.25 IS=--100mA, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit VDD= --15V 0V --4V VIN PW=10μs D.C.≤1% ID= --50mA RL=300Ω D VIN VOUT G P.G 50Ω S MCH6601 Ordering Information Device MCH6601-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb Free No.6458-2/7 MCH6601 ID -- VDS --0.18 5V . --2 --2.0V --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --0.08 --0.06 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V --10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=75°C 25°C 10 --25°C 7 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A , mA 0 --3 I D= 10 2. = -V GS V ,V mA = GS 0 --4. 50 -I D= 8 6 4 2 --60 --40 --20 0 20 40 60 80 --25°C 5 100 Ambient Temperature, Ta -- °C 120 140 25°C 3 2 2 3 5 7 --0.1 160 IT00083 2 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 Ta=75°C 3 2 --25°C 2 3 25°C 5 7 --0.001 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S 5V 12 7 | yfs | -- ID 1.0 16 14 Ta=75°C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.0001 3 --4.0 IT00078 3 7 3 --3.5 VGS= --4V 1000 5 2 --3.0 Drain Current, ID -- A VGS= --2.5V 7 --2.5 RDS(on) -- ID IT00079 RDS(on) -- ID 100 --2.0 5 1.0 --0.01 0 --2 --1.5 7 25 --1 --1.0 100 Ta=25°C 0 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.10 0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.12 --0.02 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C --0.04 --0.01 10 --0.14 Ta= --0.07 --25 °C --0.16 --6.0 V Drain Current, ID -- A --0.08 VDS= --10V 75° C --4 . --3 .0V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 2 3 IT00082 VDS= --10V 7 5 3 2 0.1 25°C 5°C 2 Ta= -- 7 75°C 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6458-3/7 MCH6601 IS -- VSD 5 Switching Time, SW Time -- ns --0.1 7 5 --0.6 --0.7 C --25° 25°C 3 Ta= 75°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 3 2 Ciss 7 Coss 5 3 2 Crss tr 5 td(on) 3 2 2 3 5 7 --0.1 IT00086 VGS -- Qg VDS= --10V ID= --100mA --8 --7 --6 --5 --4 --3 --2 --1 0 0 --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V 0 0.2 0.4 0.6 1m Allowable Power Dissipation, PD -- W IDP= --0.8A s 10 ms 3 ID= --0.2A 10 DC --0.1 0m s op era tio 7 n Operation in this area is limited by RDS(on). 5 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 1.0 1.2 1.4 1.6 IT00088 PD -- Ta 1.0 PW≤10μs 5 0.8 Total Gate Charge, Qg -- nC IT00087 ASO --1.0 Drain Current, ID -- A 7 Drain Current, ID -- A 1.0 2 100 --9 10 tf td(off) --10 5 2 2 f=1MHz 7 7 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A 2 --0.01 --0.5 VDD= --15V VGS= --4V 7 3 2 SW Time -- ID 1000 VGS=0V M 0.8 ou nt ed on ac er 0.6 am ic bo a rd 0.4 (9 00 m m2 ✕0 .8m m 0.2 )1 un it 0 3 5 IT01733 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01734 No.6458-4/7 MCH6601 Taping Specification MCH6601-TL-E No.6458-5/7 MCH6601 Outline Drawing MCH6601-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.6458-6/7 MCH6601 Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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