VEC2315 Ordering number : EN8699A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFETs VEC2315 General-Purpose Switching Device Applications Features • • • • • ON-resistance RDS(on)1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit --60 V ±20 V --2.5 A PW≤10μs, duty cycle≤1% --10 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.9 W Total Dissipation PD PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Product & Package Information unit : mm (typ) 7012-002 • Package : VEC8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.3 8 7 0.15 VEC2315-TL-H Packing Type : TL 6 5 Marking 2.3 UM LOT No. 2 3 TL 4 0.65 2.9 0.75 1 0.07 0.25 2.8 0.25 Package Dimensions Electrical Connection 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 8 7 6 5 1 2 3 4 SANYO : VEC8 http://semicon.sanyo.com/en/network 80812 TKIM/30712PA TKIM TC-00002731 No.8699-1/7 VEC2315 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A --1.2 typ Unit max V --1 μA ±10 μA --2.6 V 3.9 ID=--1.5A, VGS=--10V ID=--0.75A, VGS=--4.5V ID=--0.75A, VGS=--4V S 105 137 mΩ 128 180 mΩ 138 194 mΩ 420 pF 54 pF Crss 44 pF Turn-ON Delay Time td(on) 6.4 ns Rise Time tr 9.8 ns Turn-OFF Delay Time 65 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--2.5A 36 ns 11 nC 1.4 nC 2 IS=--2.5A, VGS=0V nC --0.83 --1.2 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --1.5A RL=20Ω VIN D PW=10μs D.C.≤1% VOUT G VEC2315 P.G 50Ω S Ordering Information Device VEC2315-TL-H Shipping memo VEC8 3,000pcs./reel Pb Free and Halogen Free ID -- VDS V --3 . 0V V VDS= --10V --4 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT15911 0 0 --0.5 --1.0 --1.5 25° C °C --1 Ta= 7 --0.5 --2 5°C 5V --1.0 --3 --25 V --2.5 V GS= Drain Current, ID -- A --1.5 ID -- VGS --5 --4 . --2.0 --3. 5 --4. 0 --16.0V --10 .0V --6.0 V --2.5 Drain Current, ID -- A Package --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT15912 No.8699-2/7 VEC2315 RDS(on) -- VGS 300 RDS(on) -- Ta 300 150 100 50 0 0 --2 --6 --4 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 3 5 = Ta 5°C --2 5 °C 1.0 °C 25 7 7 --20 0 5 20 40 60 80 100 120 140 3 160 IT15914 IS -- VSD 7 5 2 2 --40 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 50 7 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 --0.01 --0.2 7 5 Ciss, Coss, Crss -- pF 7 3 2 tr td(on) 5 Ciss 3 2 100 7 5 5 Coss 3 3 Crss 2 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 2 7 --7 3 2 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 11 IT15919 ) 3 °C 25 2 Operation in this area is limited by RDS(on). a= (T 0 s s n 3 2 0m io --1 m 10 at 3 2 --2 10 0μ s er Drain Current, ID -- A --1.0 7 5 --0.1 7 5 --3 ID= --2.5A op --4 10 C --5 IDP= --10A (PW≤10μs) D --6 IT15918 ASO s 1m --8 1 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60 2 --10 7 5 0 --5 Drain-to-Source Voltage, VDS -- V VDS= --30V ID= --2.5A --9 0 IT15917 VGS -- Qg --10 --1.2 IT15916 f=1MHz tf 7 --1.0 1000 5 10 --0.8 Ciss, Coss, Crss -- VDS 2 td(off) 7 --0.6 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 100 --0.4 IT15915 SW Time -- ID 2 Switching Time, SW Time -- ns 100 10 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 150 0 --60 --16 VDS= --10V 3 5A 0.7 = -I A V, D 0.75 4.0 = -= -I S D .5A VG 5V, = --1 --4. I = D , VGS --10.0V = VGS IT15913 | yfs | -- ID 2 200 --25° C --0.75A 200 250 25°C ID= --1.5A Ta= 75°C 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT15920 No.8699-3/7 VEC2315 PD -- Ta Allowable Power Dissipation, PD -- W 1.2 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.9 0.8 To t al 0.6 di ss 1u nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15921 No.8699-4/7 VEC2315 Taping Specification VEC2315-TL-H No.8699-5/7 VEC2315 Outline Drawing VEC2315-TL-H Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No.8699-6/7 VEC2315 Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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