APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max™ (B2RD) The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • RBSOA and SCSOA Rated • Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol C G E C E APT50GF60LRD E All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GF60B2RD/LRD 600 VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 I C1 Continuous Collector Current @ TC = 25°C I C2 Continuous Collector Current @ TC = 90°C Pulsed Collector Current I CM2 Pulsed Collector Current 1 PD Total Power Dissipation @ TC = 25°C @ TC = 90°C UNIT Volts ±20 80 50 Amps 160 100 300 M I CM1 1 A Gate-Emitter Voltage IN VGE RY Collector-Emitter Voltage Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. PR TL C G VCES TJ,TSTG TO-264 (LRD) STATIC ELECTRICAL CHARACTERISTICS (IGBT) BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions MIN Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.50mA) 600 TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) 2.1 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C) 2.2 2.8 Gate Threshold Voltage 4.5 (VCE = VGE, I C = 700µA, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) UNIT Volts 0.50 2 TBD ±100 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 052-6253 Rev A Symbol DYNAMIC CHARACTERISTICS (IGBT) Test Conditions Characteristic Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge td(on) tr td(off) tf Eon Turn-on Delay Time 165 250 Gate Charge VGE = 15V 170 225 25 45 I C = I C2 100 140 Resistive Switching (25°C) 20 VGE = 15V 100 A VCC = .8VCES Turn-off Delay Time Turn-on Delay Time Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy PR 4 Rise Time VGE = 15V I C = I C2 4 Ets Total Switching Losses gfe Forward Transconductance 90 135 290 435 170 340 2.2 2.4 ns mJ 4.6 Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES 30 90 R G = 10Ω 100 TJ = +25°C 4.3 VCE = 20V, I C = I C2 ns 260 I C = I C2 Fall Time 50 TJ = +150°C VGE = 15V Turn-off Delay Time nC ns 30 R G = 10Ω 4 Turn-on Delay Time pF 200 RG = 10Ω Fall Time UNIT 160 I C = I C2 Total Switching Losses tf f = 1 MHz Rise Time Ets td(off) 710 VCC = 0.5VCES Turn-off Switching Energy tr 475 3 Eoff td(on) 3600 IN tf 2600 IM td(off) MAX VCE = 25V EL tr TYP Capacitance VGE = 0V Cies td(on) MIN RY Symbol APT50GF60B2RD/LRD mJ 6 S THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RΘJC RΘJA WT 052-6253 Rev A Torque Characteristic MIN TYP MAX Junction to Case (IGBT) 0.42 Junction to Case (FRED) 0.66 °C/W 40 Junction to Ambient Package Weight UNIT 0.22 oz 6.1 gm 10 lb•in 1.1 N•m Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Leakages include the FRED and IGBT. 3 See MIL-STD-750 Method 3471 4 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. APT50GF60B2RD/LRD PRELIMINARY Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 320 80 W A IC 240 60 200 50 160 40 120 30 80 20 40 10 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 IGBT 10 0 A K/W t = 2.9µs p IC ZthJC 10 2 10 µs 10 -1 100 µs 10 1 1 ms D = 0.50 0.20 10 ms 10 -2 0.10 0.05 10 0 0.02 single pulse 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -5 10 10 -4 10 -3 10 -2 VCE 10 -1 s 10 0 tp EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6253 Rev A DC APT50GF60B2RD/LRD PRELIMINARY Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 100 100 A IC A 17V 15V 13V 11V 9V 7V 80 70 80 IC 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 V 17V 15V 13V 11V 9V 7V 0 0 5 1 2 3 V VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 IICsc I C(90°C) Csc //I C2 /I C IICpulse C1 Cpuls/I 6 1.5 4 1.0 2 0.5 0 0.0 0 052-6253 Rev A 5 VCE 100 200 300 400 500 600 V 800 VCE 0 100 200 300 400 500 600 V 800 VCE EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 USA 405 S.W. Columbia Street APT50GF60B2RD/LRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS (FRED) Symbol VR Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) 600 Volts 100 RY RMS Forward Current 60 Amps 600 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IN A IFSM UNIT Maximum D.C. Reverse Voltage VRRM IF(RMS) APT50GF60B2RD/LRD STATIC ELECTRICAL CHARACTERISTICS (FRED) Characteristic / Test Conditions MIN IM Symbol TYP 1.75 IF = 120A Volts 1.5 IF = 60A, TJ = 150°C PR EL Maximum Forward Voltage UNIT 1.8 IF = 60A VF MAX DYNAMIC CHARACTERISTICS (FRED) Characteristic MIN TYP MAX 70 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C 55 trr2 Reverse Recovery Time TJ = 25°C 70 trr3 IF = 60A, diF /dt = -480A/µs, VR = 350V TJ = 100°C 90 tfr1 Forward Recovery Time TJ = 25°C 160 tfr2 IF = 60A, diF /dt = 480A/µs, VR = 350V TJ = 100°C 160 IRRM1 Reverse Recovery Current TJ = 25°C 10 17 IRRM2 IF = 60A, diF /dt = -480A/µs, VR = 350V TJ = 100°C 20 30 Qrr1 Recovery Charge TJ = 25°C 350 Qrr2 IF = 60A, diF /dt = -480A/µs, VR = 350V TJ = 100°C 900 Vfr1 Forward Recovery Voltage TJ = 25°C 6 Vfr2 IF = 60A, diF /dt = 480A/µs, VR = 350V TJ = 100°C 6 Rate of Fall of Recovery Current TJ = 25°C 800 IF = 60A, diF /dt = -480A/µs, VR = 350V TJ = 100°C 500 diM/dt UNIT ns Amps nC Volts A/µs 052-6253 Rev A Symbol APT50GF60B2RD/LRD 2500 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 160 TJ = 150°C 120 TJ = 100°C TJ = 25°C 80 TJ = -55°C 40 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 60A 1000 500 30A 30A 20 10 IM TJ = 100°C VR = 350V 160 120A 60A PR 30A EL 200 120 80 40 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 0.7 0.5 Qrr 1.2 trr trr IRRM 0.8 Qrr 0.4 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 4, Dynamic Parameters vs Junction Temperature 15.0 1200 1000 TJ = 100°C VR = 350V IF = 60A 12.5 800 10.0 Vfr 600 7.5 400 5.0 200 Tfr 2.5 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate D=0.5 0.2 0.1 0.05 0.05 0.01 0.02 Note: 0.01 PDM 0.1 t1 SINGLE PULSE 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) 30 1.6 RY 60A IN Kf, DYNAMIC PARAMETERS (NORMALIZED) 120A 40 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 3, Reverse Recovery Current vs Current Slew Rate trr, REVERSE RECOVERY TIME (nano-SECONDS) 120A 1500 2.0 TJ = 100°C VR = 350V tfr, FORWARD RECOVERY TIME (nano-SECONDS) IRRM, REVERSE RECOVERY CURRENT (AMPERES) 50 ZΘJC, THERMAL IMPEDANCE (°C/W) 2000 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 0 052-6253 Rev A TJ = 100°C VR = 350V A IF, FORWARD CURRENT (AMPERES) 200 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 10 APT50GF60B2RD/LRD Vr D.U.T. trr/Qrr Waveform 30µH PEARSON 411 CURRENT TRANSFORMER PR EL IM IN A RY +15v diF /dt Adjust 0v -15v Figure 25, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF 1 4 6 Zero 5 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions T-MAX™ Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 052-6253 Rev A 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) Collector (Cathode) Collector (Cathode) 5.38 (.212) 6.20 (.244) Gate Collector (Cathode) Emitter (Anode) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Collector (Cathode) Emitter (Anode)