APT50GF60BR
APT50GF60BR
600V
75A
Fast IGBT
TO-247
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
C
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
MAXIMUM RATINGS
Symbol
G
C
G
E
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
UNIT
APT50GF60BR
VCES
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KW)
600
VGE
Gate-Emitter Voltage
±20
I C1
Continuous Collector Current @ TC = 25°C
75
I C2
Continuous Collector Current @ TC = 90°C
50
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
100
EAS
Single Pulse Avalanche Energy
2
75
mJ
PD
Total Power Dissipation
300
Watts
TJ,TSTG
TL
1
Volts
Amps
160
@ TC = 25°C
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VGE(TH)
VCE(ON)
I CES
I GES
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
Gate Threshold Voltage
4.5
5.5
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.1
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
2.2
2.8
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
0.5
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
5.0
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
UNIT
Volts
mA
nA
Rev E
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
6-2000
BVCES
Characteristic / Test Conditions
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6207
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on Delay Time
MIN
Capacitance
VGE = 0V
f = 1 MHz
155
Gate Charge
VGE = 15V
175
100
Resistive Switching (25°C)
29
VGE = 15V
118
VCC = 0.66VCES
I C = I C2
28
75
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
185
I C = I C2
Turn-on Switching Energy
R G = 10W
1.8
Eoff
Turn-off Switching Energy
TJ = +150°C
2.4
Ets
Total Switching Losses
tr
td(off)
Turn-on Delay Time
Rise Time
mJ
4.2
30
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
Turn-off Delay Time
80
VGE = 15V
I C = I C2
R G = 10W
43
Ets
Total Switching Losses
TJ = +25°C
3.6
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
240
Fall Time
tf
ns
265
Eon
td(on)
ns
190
Turn-on Delay Time
Turn-off Delay Time
nC
150
RG = 10W
Fall Time
UNIT
pF
18
I C = I C2
Turn-off Delay Time
MAX
255
VCC = 0.66VCES
Rise Time
Rise Time
TYP
2250
VCE = 25V
3
Qg
td(on)
APT50GF60BR
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
RQJC
Junction to Case
RQJA
Junction to Ambient
WT
Package Weight
MAX
UNIT
0.42
40
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
6-2000
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 100µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
052-6207
TYP
°C/W
Rev E
Torque
MIN
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT50GF60BR
100
VGE=13, 15 & 17V
80
11V
60
40
10V
20
9V
8V
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
100
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
11V
60
10V
40
9V
20
8V
7V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (TJ = 150°C)
150
100
250µSec. Pulse Test
VGE = 15V
80
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
80
0
0
TC=-55°C
TC=+25°C
60
TC=+150°C
40
20
Cies
f = 1MHz
1,000
Coes
Cres
100
0.01
0.1
1.0
10
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
10,000
100
10
100µS
OPERATION
HERE
LIMITED
BY
VCE (SAT)
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1
1
10
100
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Safe Operating Area
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
C, CAPACITANCE (pF)
VGE=13, 15 & 17V
20
IC = IC2
TJ = +25°C
16
12
VCE =120V
VCE =300V
VCE =480V
8
4
0
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.5
D=0.5
0.1
0.2
0.05
0.1
Note:
0.005
0.01
t1
6-2000
0.02
t2
Duty Factor D = t1/t2
SINGLE PULSE
0.001
10 -5
Peak TJ = PDM x ZθJC + TC
10 -4
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Rev E
0.01
052-6207
0.05
PDM
ZqJC, THERMAL IMPEDANCE (°C/W)
1.0
APT50GF60BR
80
IC, COLLECTOR CURRENT (AMPERES)
VCE(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
4.0
3.5
3.0
IC1
2.5
IC2
2.0
0.5 IC2
1.5
20
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
1.2
10
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
6
4
Eoff
2
2.5
VCC = 0.66 VCES
VGE = +15V
RG = 10W
IC1
5
Eon
20
40
60
80
100
RG, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
20
10
8
IC2
0.5 IC2
1
0.5
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
0 0
SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
40
0 25
SWITCHING ENERGY LOSSES (mJ)
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
60
2.0
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10W.
Eoff
1.5
1.0
Eon
0.5
0 0
10
20
30
40
50
IC, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
052-6207
SWITCHING LOAD CURRENT (A)
Rev E
6-2000
100
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
10
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
100
1000
APT50GF60BR
90%
V CLAMP
A
t d (on)
10
t d(off)
IC
IC
tor e
uc arg
Ind -Ch
e
Pr
V CC
D.U.T.
100uH
90%
IC
DRIVER*
10%
90%
V CC
10
A
tr
10%
10%
tf
D.U.T. V CE(SAT)
E on
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Ets = E on + E off
E off
Figure 16, Switching Loss Test Circuit and Waveforms
2
VCE(off)
VGE(on)
V CC
90%
0.1 F
1KV
50 F
600V
.66 VCES
RL =
I C2
2
D.U.T.
10%
1
From
Gate Drive
Circuitry
VCE(on)
VGE(off)
t d (on)
tr
t d(off)
R G = 10 Ohms
1
tf
Figure 17, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Collector
(Cathode)
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT Reserves the right to change, without notice, the specifications and information contained herein.
Gate
Collector
(Cathode)
Emitter
(Anode)
Rev E
1.01 (.040)
1.40 (.055)
6-2000
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
052-6207
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)