ANPEC APW8727

APW8727/L
Synchronous single PWM Controller with Multiform supply Voltage
Features
General Description
•
Adjustable Output Voltage from +0.8V to +5.0V
The APW8727 is a single-phase, constant on-time, syn-
- 0.8V Reference Voltage
chronous PW M controller, which drives N-channel
MOSFETs. The APW8727 steps down high voltage to
- +0.6% Accuracy
•
generate low-voltage chipset, RAM supplies in notebook
computers or motherboard applications.
Operates from An Input Battery Voltage Range of
+4V to +25V
•
The APW8727 provides excellent transient response and
accurate DC voltage output in either PFM or PWM Mode.
Multiform Purpose Input Voltage Collocation
- -VCC=5V / VIN=8~19V For NB application
In Pulse Frequency Mode (PFM), the APW8727 provides
very high efficiency over light to heavy loads with loading-
- VCC=5~12V / VIN=5~12V For table PC application
•
Power-On-Reset Monitoring on VCC pin
•
Excellent line and load transient responses
•
Ultrasonic Operation Eliminated Audio Noise
•
PFM mode for increased light load efficiency
•
300kHz Constant PWM Switching Frequency
•
Integrated MOSFET Drivers
•
Integrated Bootstrap Forward P-CH MOSFET
•
Integrated Soft-Start Function
•
Power Good Monitoring
•
70% Under-Voltage Protection
•
125% Over-Voltage Protection
•
modulated switching frequencies. In PWM Mode, the converter works nearly at constant frequency for low-noise
requirements. The unique ultrasonic mode maintains the
switching frequency above 37kHz, which eliminates noise
in audio application.
The APW8727 is equipped with accurate positive current
limit, output under-voltage, and output over-voltage
protections, perfect for multiform applications. The PowerOn-Reset function monitors the voltage on VCC to prevent wrong operation during power-on. The APW8727 has
an internal 2ms digital soft start that ramps up the output
voltage with programmable slew rate to reduce the start-
Adjustable Current-limit protection
up current. The enable function can let user easy to apply
APW8727.
- Using Sense Low-Side MOSFET’s RDS(ON)
•
Over-Temperature Protection
•
TDFN-10 3x3 package
•
Lead Free and Green Devices Available
The APW8727 is available in 10pin TDFN 3x3 package
respectively.
Simplified Application Circuit
(RoHS Compliant)
4.5~13.2V
Applications
•
•
VCC
Notebook
UGATE
Table PC
•
Hand-Held Portable
•
AIO PC
•
Wide input DC/DC Regulators
4~25V
VIN
Q1
APW8727
L
POK
PHASE
EN
LGATE/
OCSET
VOUT
Q2
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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APW8727/L
Ordering and Marking Information
APW8727/L
Package Code
QB : TDFN3x3-10
Temperature Range
I : -40 to 85 oC
Handling Code
Assembly Meterial
Handling Code
TR : Tape & Reel
Assembly Meterial
G : Halogen and Lead Free Device
.
Temperature Range
Package Code
QB :
APW
8727
XXXXX
XXXXX - Date Code
APW8727L QB :
APW
8727L
XXXXX
XXXXX - Date Code
APW8727
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
Pin Configuration
BOOT 1
BOOT 1
10 POK
10 POK
PHASE 2
9 VSENSE
PHASE 2
9 NC
UGATE 3
8 FB
UGATE 3
8 FB
LGATE/OCSET 4
7 EN
LGATE/OCSET 4
7 EN
GND 5
GND 5
6 VCC
APW8727
TDFN-10 3X3 (top view)
6 VCC
APW8727L
TDFN-10 3X3(top view)
= GND and Thermal Pad (connected to GND plane for better heat dissipation)
Absolute Maximum Ratings (Note 1)
Symbol
VCC
VBOOT-GND
VBOOT
VPOK
Parameter
VCC Supply Voltage (VCC to GND)
Rating
Unit
-0.3 ~ 16
V
BOOT Supply Voltage (BOOT to GND)
-0.3 ~ 44
V
BOOT Supply Voltage (BOOT to PHASE)
-0.3 ~ 16
V
POK Supply Voltage (POK to GND)
-0.3 ~ 16
V
-0.3~7
V
All Other Pins (EN, VSENSE and FB to GND)
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APW8727/L
Absolute Maximum Ratings (Cont.) (Note 1)
Symbol
Parameter
Rating
Unit
-3 ~ VBOOT+3
V
UGATE Voltage (UGATE to PHASE)
<20ns pulse width
>20ns pulse width
-0.3 ~ VBOOT+0.3
<20ns pulse width
>20ns pulse width
-0.3 ~ VCC+0.3
<20ns pulse width
>20ns pulse width
-0.3 ~ 28
LGATE Voltage (LGATE to GND)
-5 ~ VCC+5
V
PHASE Voltage (PHASE to GND)
VPHASE
Maximum Junction Temperature
TJ
TSTG
Storage Temperature
TSDR
Maximum Soldering Temperature, 10 Seconds
-5 ~ 35
V
150
o
-65 ~ 150
o
260
o
C
C
C
Note1: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Thermal Characteristics
Parameter
Symbol
Typical Value
Unit
Thermal Resistance -Junction to Ambient (Note 2)
θJA
TDFN3x3-10
°C/W
55
Note 2: θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.The exposed pad
of package is soldered directly on the PCB.
Recommended Operating Conditions (Note 3)
Symbol
Parameter
VIN
Converter Input Voltage
Range
Unit
4 ~ 25
V
VCC
VCC Supply Voltage
4.5 ~ 13.2
V
VOUT
Converter Output Voltage
0.8~5
V
IOUT
Converter Output Current
0 ~ 20
A
TA
Ambient Temperature
-40 ~ 85
o
TJ
Junction Temperature
-40 ~ 125
o
C
C
Note 3: Refer to the application circuit for further information.
Copyright  ANPEC Electronics Corp.
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APW8727/L
Electrical Characteristics
These specifications apply for TA = -40oC to +85oC, unless otherwise stated. All typical specifications TA= +25oC, VCC =
12V
Symbal
Parameter
APW8727
Test Condition
Min.
Typ.
Max.
Unit
-
0.8
-
V
-0.6
-
+0.6
%
-1.0
-
+1.0
%
FB=0.8V
-
-
1
µA
VCC Input Bias Current
VCC Current, EN=5V, VFB=0.9V,
PHASE=0.5V
-
2
3
VCC Shutdown Current
EN=GND, VCC=5V
-
15.3
20
µA
Reference VOLTAGE
Reference Voltage
o
VREF
TA = 25 C
Regulation Accuracy
IFB
FB Input Bias Current
o
o
TA = -40 C ~ 85 C, Line / Load
Transient
SUPPLY CURRENT
IVCC
IVCC_SHD
N
mA
SWITCHING FREQUENCY AND DUTY
TON
TOFF(MIN)
PWM On Time
VIN=12V, VOUT=1V
222
278
333
ns
Minimum off time
VFB=0.75V, VPHASE=-0.1V
300
400
500
ns
25
37
-
kHz
Minimum Ultrasonic Skip
Operating Frequency
Power On Timing
TSS
OCP Threshold Setting Time
When set the max. value
-
950
-
µs
Internal Soft Start Time
VOUT=0% to VOUT Regulation (95%)
-
2
-
ms
5V UG Source current
VCC=5V, BOOT-UG=5V
-
1.5
-
A
5V UG Sink Resistance
VCC=5V, UG-PHASE=1V
-
1.4
-
Ω
5V LG Source current
VCC=5V, VCC-LG=5V
-
1.5
-
A
5V LG Sink Resistance
VCC=5V, LG-GND=1V
-
1.0
-
Ω
UG to LG Dead time
UG falling to LG rising at VCC=5V
-
40
-
ns
UG falling to LG rising at VCC=12V
-
20
-
ns
GATE DRIVER
LG to UG Dead time
LG falling to UG rising at VCC=5V
-
40
-
ns
LG falling to UG rising at VCC=12V
-
20
-
ns
Bootstrap Forward Voltage
VVCC – VBOOT-GND, IF = 10mA
-
0.2
0.4
V
Reverse Leakage
VBOOT-GND = 30V, VPHASE = 25V,
VVCC = 5V
-
-
0.5
µA
BOOTSTRAP SWITCH
VF
IR
Copyright  ANPEC Electronics Corp.
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APW8727/L
Electrical Characteristics (Cont.)
These specifications apply for TA = -40oC to +85oC, unless otherwise stated. All typical specifications TA= +25oC, VCC =
12V
Symbal
Parameter
APW8727
Test Condition
Min.
Typ.
Max.
Unit
4.25
4.35
4.45
V
-
300
-
mV
-
-
0.85
Enable
1.3
-
-
EN=5V
-
0.1
1.0
µA
87
90
93
%
VCC POR THRESHOLD
VVCC_THR
Rising VCC POR Threshold
Voltage
VCC POR Hysteresis
CONTROL INPUTS
EN Threshold
EN Leakage
Shutdown
V
POWER-OK INDICATOR
POK in from Lower (POK Goes
High)
VPOK
IPOK
POK Threshold
POK out from normal falling (POK
Goes Low)
65
70
75
%
POK out from normal rising (POK
Goes Low)
120
125
130
%
POK Leakage Current
VPOK=5V
-
0.1
1
µA
POK Sink Current
VPOK=0.5V
5
15
-
mA
POK Enable Delay Time
VOUT from 0% to POK High
-
2.5
-
ms
9.5
10
10.5
µA
CURRENT SENSE
IOCSET
IOCSET OCP Threshold
IOCSET Sourcing
TCIOCSET
IOCSET Temperature
Coefficient
On The Basis of 25°C
VROCSET
Maximum Current Limit
Threshold
ROCSET open
-
640
-
mV
Zero Crossing Comparator
Offset
VGND-PHASE Voltage
-3
0
3
mV
65
70
75
%
-
30
-
µs
ppm/ oC
2780
PROTECTION
VUV
UVP Threshold
UVP Debounce Time
VOVR
TOTR
UVP Enable Delay
VOUT from 0% to UVP enable
OVP Rising Threshold
VFB rising, LG fully turn on
OVP Propagation Delay
VFB Rising
OTP Rising Threshold (Note
4)
OTP Hysteresis (Note 4)
-
2.5
-
ms
120
125
130
%
-
2
-
µs
-
150
-
o
-
o
-
25
C
C
Note 4: Guaranteed by design.
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APW8727/L
Typical Operating Characteristics
Switching Frequency vs.
Converter Input Voltage
Switching Frequency vs.
Converter Output Current
350
Switching Frequency, FSW (kHz)
Switching Frequency, FSW (kHz)
400
350
300
250
200
150
0
5
10
15
20
25
250
200
150
100
50
0
0.001
30
0.01
10
1
100
Converter Input Voltage, VIN (V)
Converter Output Voltage vs.
Converter Output Current
Converter Output Voltage vs.
Converter Input Voltage
Converter Output Voltage, VOUT (V)
1.080
VIN=12V
1.060
VIN=19V
1.058
1.056
1.054
1.052
1.050
Load=0A
1.070
Load=2A
1.060
1.050
1.040
1.030
1.048
0
3
6
9
12
15
18
21
24
3
6
9
12
15
18
21
24
Converter Input Voltage, VIN (V)
Converter Output Current, IOUT (A)
Reference Voltage vs.
Junction Temperature
Switching Frequency vs.
Junction Temperature
350
0.81
340
Switching Frequency (kHz)
VCC = 12V
Reference Voltage (V)
0.1
Converter Output Current, IOUT (A)
1.062
Converter Output Voltage, VOUT (V)
300
0.805
0.8
0.795
330
320
310
300
290
280
270
260
0.79
-20
250
0
20
40
60
80
100
-20
120
20
40
60
80
100
120
Junction Temperature (oC)
Junction Temperature (oC)
Copyright  ANPEC Electronics Corp.
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APW8727/L
Typical Operating Characteristics
Efficiency vs Load current
VOUT=1.05V
95
VIN=19V
Efficiency (%)
90
VIN=12V
85
80
75
70
H-Side:SM4370 x1
L-Side:SM4373 x1
65
60
0.1
1
10
100.00
Converter Output Current, IOUT (A)
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APW8727/L
Operating Waveforms
Refer to the typical application circuit. The test condition is VIN=19V, TA= 25oC unless otherwise specified.
Power Off
Power On
VIN
VIN
1
1
RLOAD=20Ω
VOUT
2
VOUT
2
VPHASE
VPHASE
3
3
CH1: VIN, 10V/Div
CH1: VIN, 10V/Div
CH2: VOUT, 500mV/Div
CH3: VPHASE, 10V/Div
TIME: 2ms/Div
CH2: VOUT, 500mV/Div
CH3: VPHASE, 10V/Div
TIME: 20ms/Div
Shutdown
Enable
VEN
VEN
1
1
VOUT
VOUT
2
RLOAD=20Ω
2
VPHASE
VPHASE
3
3
CH1: VEN, 50V/Div
CH2: VOUT, 500mV/Div
CH3: VPHASE, 10V/Div
TIME: 1ms/Div
CH1: VEN, 5V/Div
CH2: VOUT, 500mV/Div
CH3: VPHASE, 10V/Div
TIME: 1ms/Div
Copyright  ANPEC Electronics Corp.
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APW8727/L
Operating Waveforms
Refer to the typical application circuit. The test condition is VIN=19V, TA= 25oC unless otherwise specified.
Over-Current Protection
Under-Voltage Protection
Rocset=7.5k RDS(low-side)=4.6mΩ
1
VOUT
VSENSE
1
VLGATE
2
VUGATE
3
VLGATE
2
VUGATE
3
IL
4
4
CH1: VOUT, 10V/Div
CH3:VLGATE10V/Div
CH3:VUGATE20V/Div
CH3: IL,10A/Div
TIME: 2ms/Div
VPOK
CH1: Vsense, 500mV/Div
CH3: VLGATE 5V/Div
CH3: VUGATE 20V/Div
CH3: VPOK, 5V/Div
TIME: 10us/Div
Load Transient
POWER OK
VOUT
1
1
2
VOUT
VPOK
2
CH1: VOUT, 50mV/Div
CH2: IOUT,5A/Div
TIME: 200us/Div
CH1: VOUT, 500mV/Div
CH2: VPOK , 5V/Div
TIME: 20ms/Div
Copyright  ANPEC Electronics Corp.
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IOUT
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APW8727/L
Pin Description
PIN
No.
FUNCTION
Name
APW8727 APW8727L
1
1
BOOT
Supply Input for The UGATE Driver and An Internal Level-shift Circuit. Connect to an
external capacitor to create a boosted voltage suitable to drive a logic-level N-channel
MOSFET.
2
2
PHASE
Junction Point of The High-side MOSFET Source, Output Filter Inductor and The
Low-side MOSFET Drain. Connect this pin to the Source of the high-side MOSFET.
PHASE serves as the lower supply rail for the UG high-side gate driver.
3
3
UGATE
Output of The High-side MOSFET Driver. Connect this pin to Gate of the high-side
MOSFET.
Output of The Low-side MOSFET Driver And Current-Limit Setting Input. Connect this
pin to Gate of the low-side MOSFET. There is an internal source current 10µA through a
LGATE/OCSET resistor from LGATE/OCSET pin to GND before power on. This action is used to
monitor the voltage drop across the Drain and Source of the low-side MOSFET for
current limit.
4
4
5
5
GND
6
6
VCC
Supply Voltage Input Pin for Control Circuitry. Connect +5V~+12V from the VCC pin to
the GND. Decoupling at least 1µF of a MLCC capacitor from the VCC pin to the GND.
7
7
EN
Enable/Shutdown Pin. When EN=1, enable the PWM controller, EN=0, shutdown the
PWM controller. When the EN is floating, it will pull up to high logic automatically.
8
8
FB
Output Voltage Feedback Pin. This pin is connected to the resistive divider in remote
side that set the desired output voltage. In APW8727L, The POK, UVP, and OVP circuits
detect this signal to report output voltage status.
9
-
VSENSE
Output Voltage Sense Pin. It is used to sense the output voltage. The VSENSE pin is
the input of over-voltage, under-voltage and POK detecting comparator. Connect a
resistor diver from output to GND to set the OVP and UVP thresholds. VSENSE should
not be left floating.
-
9
NC
10
10
POK
Exposed
pad
Exposed
pad
GND
Signal Ground for The IC
No Connect
Power Good Output. POK is an open drain output used to indicate the status of the
output voltage. Connect the POK in to +5V~+12V through a pull-high resistor.
Signal Ground for The IC
Copyright  ANPEC Electronics Corp.
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APW8727/L
Block Diagram
POK
PHASE
BOOT
VREF x 125%
BOOT Voltage
Sense Circuit
POR
VIN OK Signal
To
Sample and Hold
VIN Voltage
Sense
Circuit
Sense Low -Side
BOOT OK Signal
To
Sample and Hold
VREF x 70 %
VSENSE/FB
125 % VREF
Fault
Latch
Logic
BOOT
UGATE
PWM Sign al Con tro ller
70% VREF
Thermal
Shutdown
FB
On-Time
Generator
ZC
Error
Comparator
PHASE
V CC
Digital Soft Start
LGATE
VREF
VCC
POR
EN
VROCSET
Current Limit
OV
UV
VCC
POR
Sample
and Hold
VROCSET
Copyright  ANPEC Electronics Corp.
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PHASE
10µA
GND
To LGATE
11
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APW8727/L
Typical Application Circuit
Circuit 1
VCC Supply 5V~12 V
R VCC
2R2
C VCC
1µF
6
POK
R POK
100kΩ
Enable signal
ON
OFF
7
5
BOOT
VCC
10
5V/12V PullHigh Source
VIN=5V~19V
APW8727 (TDFN3*3-10)
UGATE
PHASE
EN
C IN
10µF X 3
C BOOT
0.1µF
1
Q1
SM4370
L1
3
2
VOUT =1.05V
1.0µ H
LGATE/ 4
OCSET
GND
VSENSE
9
Q2
SM4373
R TOP
10kΩ
R OCSET
FB
8
C OUT2
330µF
330µF
RGND
32kΩ
R TOP
10kΩ
RGND
32kΩ
C OUT1
Circuit 2
VCC Supply 5V ~12V
C VCC
1 µF
5V/12V PullHigh Source
Enable signal
ON
OFF
R VCC
2R2
VIN=5V~19V
APW8727L (TDFN3x3-10)
6
10
RPOK
100kΩ
7
5
VCC
POK
EN
BOOT
UGATE
PHASE
1
C IN
10µ F X 3
C BOOT
0.1µF
Q1
SM4370
L1
3
2
V OUT=1.05V
1.0µH
GND
LGATE/ 4
OCSET
NC
9
FB
8
Q2
SM4373
R OCSET
R TOP
10kΩ
COUT1
COUT2
330µF
330µF
R GND
32kΩ
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APW8727/L
Function Description
Constant-On-Time PWM Controller with Input Feed-Forward
Where FSW is the nominal switching frequency of the converter in PWM mode.
The load current at handoff from PFM to PWM mode is
given by:
The constant-on-time control architecture is a pseudofixed
frequency with input voltage feed-forward. This architec-
1 VIN − VOUT
×
× TON-PFM
2
L
V − VOUT
V
1
= IN
×
x OUT
2L
FSW
VIN
ture relies on the output filter capacitor’s effective series
resistance (ESR) to act as a current-sense resistor, so
ILOAD(PFM to PWM) =
the output ripple voltage provides the PWM ramp signal.
In PFM operation, the high-side switch on-time controlled
by the on-time generator is determined solely by a oneshot
whose pulse width is inversely proportional to input volt-
Power-On-Reset
A Power-On-Reset (POR) function is designed to prevent
wrong logic controls when the VCC voltage is low. The
age and directly proportional to output voltage. In PWM
operation, the high-side switch on-time is determined by
POR function continually monitors the bias supply voltage on the VCC pin if at least one of the enable pins is set
a switching frequency control circuit in the on-time generator block.
high. When the rising VCC voltage reaches the rising
VCC POR Threshold (4.35V, typical), the POR signal goes
The switching frequency control circuit senses the switching frequency of the high-side switch and keeps regulat-
high and the chip initiates soft-start operations. There is
a hysteresis to POR voltage threshold (about 300mV
ing it at a constant frequency in PWM mode. The design
improves the frequency variation and is more outstand-
typical). When VCC voltage drops lower than 4.05V
(typical), the POR disables the chip.
ing than a conventional constant-on-time controller, which
has large switching frequency variation over input voltage,
output current, and temperature. Both in PFM and PWM,
the on-time generator, which senses input voltage on
EN Pin Control
PHASE pin, provides very fast on-time response to input
line transients.
When V EN is above the EN high threshold (1.3V,
minimum), the converter is enabled. When VEN is below
the EN low threshold (0.85V, maximum), the chip is in the
Another one-shot sets a minimum off-time (400ns,
typical). The on-time one-shot is triggered if the error com-
shutdown and only low leakage current is taken from
VCC. When EN pin is in float state, it will pull up high logic
parator is high, the low-side switch current is below the
current-limit threshold, and the minimum off-time oneshot
automatically.
has timed out.
Digital Soft-Start
Pulse-Frequency Modulation (PFM)
In PFM mode, an automatic switchover to pulse-fre-
The APW8727integrates digital soft-start circuits to ramp
quency modulation (PFM) takes place at light loads. This
switchover is affected by a comparator that truncates the
up the output voltage of the converter to the programmed
regulation setpoint at a predictable slew rate. The slew
low-side switch on-time at the inductor current zero
crossing. This mechanism causes the threshold between
rate of output voltage is internally controlled to limit the
inrush current through the output capacitors during soft-
PFM and PWM operation to coincide with the boundary
between continuous and discontinuous inductor-current
start process. The figure 1 shows soft-start sequence.
When the EN pin is pulled above the rising EN threshold
operation (also known as the critical conduction point).
The on-time of PFM is given by:
voltage, the device initiates a soft-start process to ramp
up the output voltage. The soft-start interval is 2ms (typical)
and independent of the UGATE switching frequency.
TON-PFM =
V
1
× OUT
FSW
VIN
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APW8727/L
Function Description (Cont.)
Under-Voltage Protection (UVP)
V
In the operational process, if a short-circuit occurs, the
output voltage will drop quickly. When load current is bigger than current-limit threshold value, the output voltage
will fall out of the required regulation range. The underVCC
voltage protection circuit continually monitors the VSENSE
voltage after soft-start is completed. If a load step is strong
POK
POK Enable Delay
Time=2.5ms
enough to pull the output voltage lower than the undervoltage threshold, the under-voltage threshold is 70% of
Soft Start
Time=2ms
Power Ready Detection
& OCP Setting
VOUT
the nominal output voltage, the internal UVP delay counter
starts to count. After 30µs debounce time, the device turns
EN
off both high-side and low-side MOSEFET with latched.
Toggling enable pin to low or recycling VCC, will clear the
latch and bring the chip back to operation. In APW8727L,
the FB pin is also used for monitoring this function.
Over-Voltage Protection (OVP)
T
The over-voltage function monitors the output voltage by
Figure 1. Soft-Start Sequence
VSENSE pin. When the VSENSE voltage increases over
125% of the reference voltage due to the high-side
During soft-start stage before the PGOOD pin is ready,
the under-voltage protection is prohibited. The over-voltage and current-limit protection functions are enabled. If
MOSFET failure or for other reasons, the over-voltage protection comparator designed with a 2µs noise filter will
the output capacitor has residue voltage before start-up,
both low-side and high-side MOSFETs are in off-state
force the low-side MOSFET gate driver fully turn on and
latch high. This action actively pulls down the output
until the internal digital soft-start voltage equals to the VFB
voltage. This will ensure that the output voltage starts
voltage.
This OVP scheme only clamps the voltage overshoot and
from its existing voltage level.
does not invert the output voltage when otherwise activated with a continuously high output from low-side
Power OK Indicator
MOSFET driver. It’s a common problem for OVP schemes
with a latch. Once an over-voltage fault condition is set, it
The APW8727 features an open-drain POK pin to indicate output regulation status. In normal operation, when
the output voltage rises 90% of its target value, the POK
can only be reset by toggling EN, VCC power-on-reset
signal. In APW8727L, the FB pin is also used for monitoring this function.
goes high. When the output voltage outruns 70% or 125%
of the target voltage, POK signal will be pulled low
immediately.
In APW8727L, since the FB pin is used for both feedback
and monitoring purposes, the output voltage deviation
can be coupled directly to the FB pin by the capacitor in
parallel with the voltage divider as shown in the typical
applications. In order to prevent false POK from dropping,
capacitors need to parallel at the output to confine the
voltage deviation with severe load step transient.
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Rev. A.1 - Apr., 2013
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APW8727/L
Function Description (Cont.)
Over-Current Protection of the PWM Converter
ILIMIT > IOUT(MAX ) +
The over-current function protects the switching converter
against over-current or short-circuit conditions. The con-
∆I
2
Where ∆I = output inductor ripple current
- The overshoot and transient peak current also should
troller senses the inductor current by detecting the drainto-source voltage which is the product of the inductor’s
be considered.
current and the on-resistance of the low-side MOSFET
during it’s on-state. This method enhances the converter’s
Over-Temperature Protection (OTP)
efficiency and reduces cost by eliminating a current sensing resistor required.
When the junction temperature increases above the rising threshold temperature TOTR, the IC will enter the over-
A resistor (ROCSET), connected from the LGATE/OCSET to
GND, programs the over-current trip level. Before the IC
temperature protection state that suspends the PWM,
which forces the UGATE and LGATE gate drivers output
initiates a soft-start process, an internal current source,
IOCSET (10µA typical), flowing through the ROCSET develops
low. The thermal sensor allows the converters to start a
start-up process and regulate the output voltage again
a voltage (VROCSET) across the ROCSET. The device holds
VROCSET and stops the current source IOCSET during normal
after the junction temperature cools by 25oC. The OTP is
designed with a 25oC hysteresis to lower the average TJ
operation. When the voltage across the low-side MOSFET
exceeds the VROCSET, the APW8727 shuts off the converter
during continuous thermal overload conditions, which increases lifetime of the APW8727.
and then initiates a new soft-start process. After 4 overcurrent events are counted, the device turns off both high-
The On-Time Control and PWM Switching Frequency
side and low-side MOSFETs and the converter’s output
is latched to be floating.
The APW8727 has an internal OCP voltage, VOCP_MAX, and
The APW8727 does not use a clock signal to produce
PWM. The device uses the constant-on-time control architecture to produce pseudo-fixed frequency with input
voltage feed-forward. The on-time pulse width is propor-
the value is 0.64V (typical). When the ROCSET x IOCSET exceed 0.64V or the ROCSET is floating or not connected, the
tional to output voltage VOUT and inverses proportional to
input voltage VIN. When VIN is 12V, VOUT is 1V, the switch-
VROCSET will be the default value 0.64V. The over current
threshold would be 0.64V across low-side MOSFET. The
ing frequency is 300kHz at PWM operation.
APW8727 doesn’t have VIN pin to calculate on-time pulse
threshold of the valley inductor current-limit is therefore
given by:
ILIMIT =
width. Therefore, monitoring VPHASE voltage as input voltage to calculate on-time when the high-side MOSFET is
IOCSET × ROCSET
RDS(ON) (low − side)
turned on.
For the over-current is never occurred in the normal operating load range, the variation of all parameters in the
above equation should be considered:
- The RDS(ON) of low-side MOSFET is varied by temperature and gate to source voltage. Users should determine the maximum RDS(ON) by using the manufacturer’s
datasheet.
- The minimum IOCSET (9.5µA) and minimum ROCSET should
be used in the above equation.
- Note that the ILIMIT is the current flow through the lowside MOSFET; ILIMIT must be greater than peak inductor
current which is output current add the half of inductor
ripple current.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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APW8727/L
Application Information
Output Voltage Setting
saturation. In some types of inductors, especially core
The output voltage is adjustable from 0.8V to 5V with a
that is made of ferrite, the ripple current will increase
abruptly when it saturates. This results in a larger output
resistor-divider connected with FB, GND, and converter’s
output. Using 1% or better resistors for the resistor-di-
ripple voltage. Besides, the inductor needs to have low
DCR to reduce the loss of efficiency.
vider is recommended. The output voltage is determined
by:
R TOP 

V OUT = 0.8 ×  1 +

R GND 

Output Capacitor Selection
Output voltage ripple and the transient voltage deviation are factors which have to be taken into consideration when selecting an output capacitor. Higher capaci-
Where 0.8 is the reference voltage, RTOP is the resistor
connected from converter’s output to FB, and RGND is the
tor value and lower ESR reduce the output ripple and
the load transient drop. Therefore, selecting high per-
resistor connected from FB to GND. Suggested RGND is in
the range from 1k to 20kΩ. To prevent stray pickup, locate
formance low ESR capacitors is recommended for
switching regulator applications. In addition to high
resistors RTOP and RGND close to APW8727.
frequency noise related to MOSFET turn-on and turnoff, the output voltage ripple includes the capacitance
Output Inductor Selection
The duty cycle (D) of a buck converter is the function of the
voltage drop ∆VCOUT and ESR voltage drop ∆VESR caused
by the AC peak-to-peak inductor’s current. These two
input voltage and output voltage. Once an output voltage
is fixed, it can be written as:
voltages can be represented by:
V
D = OUT
VIN
The inductor value (L) determines the inductor ripple
IRIPPLE
8COUTFSW
= IRIPPLE × RESR
∆VCOUT =
∆VESR
current, IRIPPLE, and affects the load transient reponse.
Higher inductor value reduces the inductor’s ripple cur-
These two components constitute a large portion of the
rent and induces lower output ripple voltage. The ripple
current and ripple voltage can be approximated by:
total output voltage ripple. In some applications, multiple
capacitors have to be paralleled to achieve the desired
ESR value. If the output of the converter has to support
another load with high pulsating current, more capaci-
VIN - VOUT VOUT
×
FSW × L
VIN
Where FSW is the switching frequency of the regulator.
Although the inductor value and frequency are increased
and the ripple current and voltage are reduced, a tradeoff
exists between the inductor’s ripple current and the regulator load transient response time.
A smaller inductor will give the regulator a faster load
transient response at the expense of higher ripple current.
Increasing the switching frequency (F SW ) also reduces
the ripple current and voltage, but it will increase the
switching loss of the MOSFETs and the power dissipation of the converter. The maximum ripple current occurs
at the maximum input voltage. A good starting point is to
choose the ripple current to be approximately 30% of the
maximum output current. Once the inductance value has
been chosen, selecting an inductor which is capable of
carrying the required peak current without going into
IRIPPLE =
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
tors are needed in order to reduce the equivalent ESR
and suppress the voltage ripple to a tolerable level. A
small decoupling capacitor (1µF) in parallel for bypassing the noise is also recommended, and the voltage rating of the output capacitors are also must be considered.
To support a load transient that is faster than the switching frequency, more capacitors are needed for reducing
the voltage excursion during load step change. Another
aspect of the capacitor selection is that the total AC current going through the capacitors has to be less than the
rated RMS current specified on the capacitors in order to
prevent the capacitor from over-heating.
Input Capacitor Selection
The input capacitor is chosen based on the voltage rating
and the RMS current rating. For reliable operation, selecting the capacitor voltage rating to be at least 1.3 times
16
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APW8727/L
Application Information (Cont.)
2
Input Capacitor Selection (Cont.)
Phigh-side = IOUT (1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FSW
2
Plow-side = IOUT (1+ TC)(RDS(ON))(1-D)
Where
higher than the maximum input voltage. The maximum
RMS current rating requirement is approximately IOUT/2,
where IOUT is the load current. During power-up, the input
capacitors have to handle great amount of surge current.
I
is the load current
OUT
TC is the temperature dependency of RDS(ON)
For low-duty notebook appliactions, ceramic capacitor is
recommended. The capacitors must be connected be-
FSW is the switching frequency
tSW is the switching interval
D is the duty cycle
Note that both MOSFETs have conduction losses while
tween the drain of high-side MOSFET and the source of
low-side MOSFET with very low-impeadance PCB layout.
MOSFET Selection
the high-side MOSFET includes an additional transition loss.
The switching interval, tSW , is the function of the reverse
The application for a notebook battery with a maximum
voltage of 24V, at least a minimum 30V MOSFETs should
transfer capacitance CRSS. The (1+TC) term is a factor in
the temperature dependency of the RDS(ON) and can be
be used. The design has to trade off the gate charge with
the RDS(ON) of the MOSFET:
extracted from the “RDS(ON) vs. Temperature” curve of the
power MOSFET.
For the low-side MOSFET, before it is turned on, the body
diode has been conducting. The low-side MOSFET driver
Layout Consideration
In any high switching frequency converter, a correct layout
is important to ensure proper operation of the regulator.
will not charge the miller capacitor of this MOSFET.
In the turning off process of the low-side MOSFET, the
With power devices switching at higher frequency, the
resulting current transient will cause voltage spike across
load current will shift to the body diode first. The high dv/
dt of the phase node voltage will charge the miller capaci-
the interconnecting impedance and parasitic circuit
elements. As an example, consider the turn-off transition
tor through the low-side MOSFET driver sinking current
path. This results in much less switching loss of the low-
of the PWM MOSFET. Before turn-off condition, the
MOSFET is carrying the full load current. During turn-off,
side MOSFETs. The duty cycle is often very small in high
battery voltage applications, and the low-side MOSFET
current stops flowing in the MOSFET and is freewheeling
by the low side MOSFET and parasitic diode. Any parasitic
will conduct most of the switching cycle; therefore, when
using smaller RDS(ON) of the low-side MOSFET, the con-
inductance of the circuit generates a large voltage spike
during the switching interval. In general, using short and
verter can reduce power loss. The gate charge for this
MOSFET is usually the secondary consideration. The
wide printed circuit traces should minimize interconnecting impedances and the magnitude of voltage spike.
high-side MOSFET does not have this zero voltage switching condition; in addition, because it conducts for less
Besides, signal and power grounds are to be kept separating and finally combined using ground plane construc-
time compared to the low-side MOSFET, the switching
loss tends to be dominant. Priority should be given to the
tion or single point grounding. The best tie-point between
the signal ground and the power ground is at the nega-
MOSFETs with less gate charge, so that both the gate
driver loss and switching loss will be minimized.
tive side of the output capacitor on each channel, where
there is less noise. Noisy traces beneath the IC are not
The selection of the N-channel power MOSFETs are
determined by the R DS(ON), reversing transfer capaci-
recommended. Below is a checklist for your layout:
• Keep the switching nodes (UGATE, LGATE, BOOT,
tance (CRSS) and maximum output current requirement.
The losses in the MOSFETs have two components:
and PHASE) away from sensitive small signal nodes
since these nodes are fast moving signals.
conduction loss and transition loss. For the high-side
and low-side MOSFETs, the losses are approximately
Therefore, keep traces to these nodes as short as
possible and there should be no other weak signal
given by the following equations:
traces in parallel with theses traces on any layer.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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APW8727/L
Application Information (Cont.)
Layout Consideration (Cont.)
ThermalVia diameter
12mil X 5
• The signals going through theses traces have both
high dv/dt and high di/dt with high peak charging and
discharging current. The traces from the gate drivers
0. 3 0mm
2.70mm
• Place the source of the high-side MOSFET and the
drain of the low-side MOSFET as close as possible.
0.50mm
the node. In addition, the large layout plane between
the drain of the MOSFETs (VIN and PHASE nodes) can
•
0.275mm
0.75mm
to the MOSFETs (UGATE and LGATE) should be short
and wide.
Minimizing the impedance with wide layout plane between the two pads reduces the voltage bounce of
Ground plane for
ThermalPAD
1.75mm
get better heat sinking.
The GND is the current sensing circuit reference
TDFN3X3 -10
ground and also the power ground of the LGATE lowside MOSFET. On the other hand, the GND trace
should be a separate trace and independently go to
the source of the low-side MOSFET. Besides, the current sense resistor should be close to OCSET pin to
avoid parasitic capacitor effect and noise coupling.
• Decoupling capacitors, the resistor-divider, and boot
capacitor should be close to their pins. (For example,
place the decoupling ceramic capacitor close to the
drain of the high-side MOSFET as close as possible.)
• The input bulk capacitors should be close to the drain
of the high-side MOSFET, and the output bulk capacitors should be close to the loads. The input capacitor’s ground should be close to the grounds of the
output capacitors and low-side MOSFET.
• Locate the resistor-divider close to the FB pin to minimize the high impedance trace. In addition, FB pin
traces can’t be close to the switching signal traces
(UGATE, LGATE, BOOT, and PHASE).
Copyright  ANPEC Electronics Corp.
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APW8727/L
Package Information
TDFN3x3-10
D
E
A
b
Pin 1
A1
D2
A3
NX
aaa C
L
K
E2
Pin 1 Corner
e
S
Y
M
B
O
L
A
TDFN3x3-10
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.70
0.80
0.028
0.031
0.05
0.000
0.002
A1
A3
0.00
b
0.18
0.30
0.008 REF
0.007
0.012
D
2.90
3.10
0.114
0.122
2.70
0.087
0.106
3.10
0.114
0.122
1.75
0.055
0.069
0.50
0.016 BSC
0.012
0.020
D2
E
E2
0.20 REF
2.20
2.90
1.40
e
L
0.30
K
0.20
0.50 BSC
aaa
0.008
0.08
0.003
Note : 1. Followed from JEDEC MO-229 VEED-5.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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APW8727/L
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
TDFN3x3-10
A
H
T1
C
d
D
330.0±2.00
50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
P0
P1
P2
D0
D1
T
A0
B0
K0
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
3.30±0.20
3.30±0.20
1.30±0.20
4.0±0.10
8.0±0.10
W
E1
12.0±0.30 1.75±0.10
F
5.5±0.05
(mm)
Devices Per Unit
Package Type
TDFN3x3-10
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
Unit
Tape & Reel
Quantity
3000
20
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APW8727/L
Taping Direction Information
TDFN3x3-10
USER DIRECTION OF FEED
Classification Profile
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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APW8727/L
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3 °C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
<2.5 mm
≥2.5 mm
Volume mm
<350
235 °C
220 °C
3
Volume mm
≥350
220 °C
220 °C
3
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
Volume mm
350-2000
260 °C
250 °C
245 °C
3
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
HBM
MM
Latch-Up
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
MIL-STD-883-3015.7
JESD-22, A115
JESD 78
22
Description
5 Sec, 245°C
1000 Hrs, Bias @ Tj=125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
VHBM≧2KV
VMM≧200V
10ms, 1tr≧100mA
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APW8727/L
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2013
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