AUK DN500F

DN500F
Semiconductor
NPN Silicon Transistor
Description
• Extremely low collector-to-emitter saturation voltage
( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP500F
• Switching Application
Ordering Information
Type NO.
Marking
DN500F
Package Code
N5
:
SOT-89
monthly code
Outline Dimensions
unit : mm
4.0
0.50±0.1
-0.3
+0.5
-0.3
1.00±0.3
2.5 +0.2
KST-8012-002
-0.02
0.42 +0.04
0~0.1
1.5
-0.1
+0.2
0.42±0.05
1
0.15 Typ.
2
0.52±0.05
4.5
-0.1
+0.2
1.82±0.05
3
PIN Connections
1. Base
2. Collector
3. Emitter
1
DN500F
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VC B O
15
V
Collector-Emitter voltage
VC E O
12
V
Emitter-Base voltage
VE B O
5
V
IC
5
A
PC
0.5
Collector current
Collector dissipation
PC
*
W
2
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
(Ta=25° C)
Characteristic
Symbol
Collector-Base breakdown voltage
BVCBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Min.
Typ.
Max.
Unit
IC =50µA, IE=0
15
-
-
V
BVCEO
IC =1mA, IB=0
12
-
-
V
BVEBO
IE=50µA, IC =0
5
-
-
V
Collector cut-off current
ICBO
VCB=15V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC =0
-
-
0.1
µA
h FE1
VCE=2V, IC =500mA
160
-
320
-
h FE2
VCE=2V, IC =3A
40
-
-
-
DC current gain
Test Condition
Collector-Emitter on voltage
VCE(sat1)
IC =3A, IB=150mA
-
-
0.3
V
Base-Emitter on voltage
VBE(sat)
IC =3A, IB=150mA
-
-
1.2
V
fT
VCB=5V, IC =500mA
-
150
-
MHz
VCB=10V, IE=0, f=1MHz
-
-
50
pF
Transition frequency
Collector output capacitance
C ob
KST-8012-002
2
DN500F
Electrical Characteristic Curves
Fig. 2 Ic - VB E
Fig. 1 Pc - Ta
Fig. 3 hFE - IC
Fig. 4 VCE(sat) - IC
KST-8012-002
3