DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500F • Switching Application Ordering Information Type NO. Marking DN500F Package Code N5 : SOT-89 monthly code Outline Dimensions unit : mm 4.0 0.50±0.1 -0.3 +0.5 -0.3 1.00±0.3 2.5 +0.2 KST-8012-002 -0.02 0.42 +0.04 0~0.1 1.5 -0.1 +0.2 0.42±0.05 1 0.15 Typ. 2 0.52±0.05 4.5 -0.1 +0.2 1.82±0.05 3 PIN Connections 1. Base 2. Collector 3. Emitter 1 DN500F Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VC B O 15 V Collector-Emitter voltage VC E O 12 V Emitter-Base voltage VE B O 5 V IC 5 A PC 0.5 Collector current Collector dissipation PC * W 2 Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics (Ta=25° C) Characteristic Symbol Collector-Base breakdown voltage BVCBO Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Min. Typ. Max. Unit IC =50µA, IE=0 15 - - V BVCEO IC =1mA, IB=0 12 - - V BVEBO IE=50µA, IC =0 5 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=4V, IC =0 - - 0.1 µA h FE1 VCE=2V, IC =500mA 160 - 320 - h FE2 VCE=2V, IC =3A 40 - - - DC current gain Test Condition Collector-Emitter on voltage VCE(sat1) IC =3A, IB=150mA - - 0.3 V Base-Emitter on voltage VBE(sat) IC =3A, IB=150mA - - 1.2 V fT VCB=5V, IC =500mA - 150 - MHz VCB=10V, IE=0, f=1MHz - - 50 pF Transition frequency Collector output capacitance C ob KST-8012-002 2 DN500F Electrical Characteristic Curves Fig. 2 Ic - VB E Fig. 1 Pc - Ta Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-8012-002 3