STD129 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO. Marking STD129 STD129 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. 0.38 1.20±0.1 1 2 3 KST-9060-001 PIN Connections 1. Emitter 2. Collector 3. Base 1 STD129 Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VC B O 40 V Collector-Emitter voltage VC E O 15 V Emitter-Base voltage VE B O 7 V Collector current IC 5 A Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics (Ta=25° C) Characteristic Symbol Collector-Base breakdown voltage BVCBO Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Min. Typ. Max. Unit IC =50µA, IE=0 40 - - V BVCEO IC =1mA, IB=0 15 - - V BVEBO IE=50µA, IC =0 7 - - V Collector cut-off current ICBO VCB=30V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC =0 - - 0.1 µA h FE1 VCE=2V, IC =0.5A 160 - 320 - h FE2 VCE=2V, IC =3A 40 - - - DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Test Condition VCE(sat) IC =3A, IB=150mA - - 0.3 V fT VCE=6V, IE=-50mA - 150 - MHz VCB=20V, IE=0, f=1MHz - - 50 pF C ob KST-9060-001 2 STD129 Electrical Characteristic Curves Fig. 2 hFE - IC Fig. 1 Pc - Ta Fig. 3 VCE(sat) - IC Fig. 4 fT - IC Fig. 5 Cob - VCB KST-9060-001 3