AUK STD129

STD129
Semiconductor
NPN Silicon Transistor
Description
• Extremely low collector-to-emitter saturation voltage
( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA)
• Suitable for low voltage large current drivers
• Switching Application
Ordering Information
Type NO.
Marking
STD129
STD129
Package Code
TO-92
Outline Dimensions
unit : mm
3.45±0.1
4.5±0.1
4.5±0.1
2.25±0.1
2.06±0.1
14.0±0.40
0.4±0.02
1.27 Typ.
2.54 Typ.
0.38
1.20±0.1
1 2 3
KST-9060-001
PIN Connections
1. Emitter
2. Collector
3. Base
1
STD129
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VC B O
40
V
Collector-Emitter voltage
VC E O
15
V
Emitter-Base voltage
VE B O
7
V
Collector current
IC
5
A
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
Electrical Characteristics
(Ta=25° C)
Characteristic
Symbol
Collector-Base breakdown voltage
BVCBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Min.
Typ.
Max.
Unit
IC =50µA, IE=0
40
-
-
V
BVCEO
IC =1mA, IB=0
15
-
-
V
BVEBO
IE=50µA, IC =0
7
-
-
V
Collector cut-off current
ICBO
VCB=30V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC =0
-
-
0.1
µA
h FE1
VCE=2V, IC =0.5A
160
-
320
-
h FE2
VCE=2V, IC =3A
40
-
-
-
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Test Condition
VCE(sat)
IC =3A, IB=150mA
-
-
0.3
V
fT
VCE=6V, IE=-50mA
-
150
-
MHz
VCB=20V, IE=0, f=1MHz
-
-
50
pF
C ob
KST-9060-001
2
STD129
Electrical Characteristic Curves
Fig. 2 hFE - IC
Fig. 1 Pc - Ta
Fig. 3 VCE(sat) - IC
Fig. 4 fT - IC
Fig. 5 Cob - VCB
KST-9060-001
3