DP500F Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F Ordering Information Type NO. Marking DP500F Package Code P5 SOT-89 : hFE rank, monthly code Outline Dimensions unit : mm 4.0 0.50±0.1 -0.3 +0.5 -0.3 1.00±0.3 2.5 +0.2 3 1.82±0.05 KST-8014-000 -0.02 0.42 +0.04 0~0.1 -0.1 1.5 +0.2 0.42±0.05 1 0.15 Typ. 2 0.52±0.05 4.5 -0.1 +0.2 7 PIN Connections 1. Base 2. Collector 3. Emitter 1 DP500F Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V IC -5 A PC 0.5 Collector current Collector dissipation PC * W 2 Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, I E =0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE =-50µA, IC =0 -5 - - V Collector cut-off current ICBO VCB=-12V, I E =0 - - -1 µA Emitter cut-off current IEBO VEB =-5V, IC =0 - - -1 µA 120 - 700 - 40 - - - * DC current gain h FE1 VCE=-1V, IC =-100mA h FE2 VCE=-1V, IC =-3A Collector-Emitter on voltage VCE(sat1) IC=-3A, IB =-150mA - - -0.3 V Base-Emitter on voltage VBE(sat) IC=-3A, IB =-150mA - - -1.2 V fT VCB=-5V, I C=-500mA - 150 - MHz VCB=-10V, I E =0, f=1MHz - - 50 pF Transition frequency Collector output capacitance C ob * : h FE rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700 KST-8014-000 2 DP500F Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 3 hFE - IC Fig. 2 Ic - VBE Fig. 4 VCE(sat) - IC KST-8014-000 3