AUK STD123ASF

STD123ASF
Semiconductor
NPN Silicon Transistor
Features
• High β& low saturation transistor.
hFE=400 Min. @VCE=1V, Ic=100mA
• Suitable for large current drive directly.
• Application for IRED Drive transistor in remote transmitter.
Ordering Information
Type NO.
Marking
STD123ASF
Package Code
12A
SOT-23F
Outline Dimensions
unit :
mm
2.4±0.1
1.6±0.1
1.90 BSC
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
KST-2029-001
PIN Connections
1. Base
2. Emitter
3. Collector
1
STD123ASF
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
10
V
Collector-Emitter voltage
VCEO
6
V
Emitter-Base voltage
VEBO
3
V
Collector current
IC
1
A
Collector dissipation
PC*
350
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.1mm
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50µA, IE=0
10
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
6
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=50µA, IC=0
3
-
-
V
Collector cut-off current
ICBO
VCB=10V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=3V, IC=0
-
-
0.1
µA
DC current gain
hFE
VCE=1V, IC=100mA
400
-
-
-
IC=500mA, IB=50mA
-
0.1
0.3
V
VCE=5V, IC=50mA
-
260
-
MHz
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
5
-
pF
On resistance
RON
f=1KHz, IB=1mA, VIN=0.3V
-
0.6
-
Ω
KST-2029-001
2
STD123ASF
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 3 COb-VCB
Fig. 2 VCE(sat)-IC
Fig. 4 hFE-IC
Fig. 5 RON-IB
KST-2029-001
3