CEL NE894M03

NEC's NPN SILICON TRANSISTOR NE894M03
FEATURES
•
OUTLINE DIMENSIONS (Units in mm)
MINIATURE M03 PACKAGE:
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
•
IDEAL FOR > 3 GHz OSCILLATORS
•
LOW NOISE, HIGH GAIN
•
LOW Cre
•
UHSO 25 GHz PROCESS
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
0.45
UE
1.4 ±0.1
0.45
(0.9)
0.3±0.1
3
1
0.2±0.1
DESCRIPTION
NEC's NE894M03 transistor is designed for oscillator applications above 3 GHz. The NE894M03 features low voltage,
low current operation, low noise, and high gain. NEC's low
profile/flat lead style "M03" package is ideal for today's portable
wireless applications.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
GHz
17
20
–
Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz
dB
10
12
–
|NF
Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
dB
–
1.4
2.5
Cre
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
pF
–
0.22
0.30
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
–
–
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
–
–
100
hFE
DC Current Gain2 at VCE = 1 V, IC = 5 mA
50
–
100
|S21E|2
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
NE894M03
2SC5786
M03
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
NE894M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9.0
VCEO
Collector to Emitter Voltage
V
3.0
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
35
PT
Total Power Dissipation
mW
105
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
IC
2
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy
board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
150
Mounted on Glass epoxy PCB
(1.08 cm2 x 1.0 mm (t) )
125
105
100
75
50
25
0
0
25
50
75
100
125
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
150
0
2
4
5
10
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
100
VCE = 1 V
500 µA
10
Collector Current, IC (mA)
Collector Current, IC (mA)
3
Collector to Base Voltage, VCB (V)
Ambient Temperature, TA (°C)
1
0.1
0.01
400 µA
450 µA
350 µA
30
300 µA
250 µA
20
200 µA
150 µA
100 µA
10
0.001
IB = 50 µA
0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage, VBE (V)
1.0
0
1
2
3
4
Collector to Emitter Voltage, VCE (V)
5
NE894M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
1000
VCE = 2 V
DC Current Gain, hFE
DC Current Gain, hFE
VCE = 1 V
100
10
10
1
0.1
24
100
10
100
10
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
40
VCE = 1 V
f = 2 GHz
16
12
8
4
VCE = 1 V
Ic = 20 mA
35
30
MSG
MAG
25
20
15
|S21e|2
10
5
0
1
100
10
0.1
Collector Current, IC (mA)
1
10
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
20
VCE = 1 V
f = 2 GHz
16
MSG
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
1
Collector Current, IC (mA)
20
0
0.1
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Gain Bandwidth Product, fT (GHz)
100
MAG
12
|S21e|2
8
4
0
VCE = 2 V
f = 2 GHz
16
MSG
MAG
12
|S21e|2
8
4
0
1
10
Collector Current, IC (mA)
100
1
10
Collector Current, IC (mA)
100
NE894M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 4 GHz
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
16
12
MSG
8
|S21e|2
4
VCE = 2 V
f = 4 GHz
16
12
MSG
8
|S21e|2
4
0
0
1
10
1
100
Collector Current, IC (mA)
20
5
Ga
4
16
3
12
2
8
NF
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
5
4
VCE = 1 V
f = 1 GHz
0
1
0
100
10
16
3
12
2
8
NF
1
0
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
16
Ga
3
12
2
8
NF
4
Noise Figure, NF (dB)
Noise Figure, NF (dB)
4
Associated Gain, Ga (dB)
20
5
20
4
16
Ga
3
12
2
8
NF
4
1
VCE = 2 V
f = 2 GHz
VCE = 1 V
f = 2 GHz
0
0
Collector Current, IC (mA)
100
10
Collector Current, IC (mA)
5
10
4
VCE = 2 V
f = 1 GHz
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
1
20
Ga
4
Collector Current, IC (mA)
1
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
10
Collector Current, IC (mA)
100
0
0
1
10
Collector Current, IC (mA)
100
Associated Gain, Ga (dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
20
NE894M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
j100
j25
+45˚
+135˚ S21
S11
j10
S12
0
10
25
100
50
0
2
+180˚
4
6
8
1
0˚
2
S2
-j10
-135˚
-j100
-j25
-45˚
-j50
-90˚
0.100 to 8.000 GHz by 0.100
0.100 to 8.000 GHz by 0.100
NE894M03
VC = 1 V, IC = 5 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.200
1.400
1.500
1.600
1.800
2.000
2.200
2.400
2.500
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
S11
MAG
0.804
0.768
0.723
0.674
0.579
0.495
0.417
0.385
0.359
0.348
0.338
0.324
0.311
0.298
0.289
0.285
0.280
0.272
0.264
0.248
0.237
0.236
0.245
0.265
0.292
0.331
0.370
0.410
0.445
S21
ANG
-12.45
-25.33
-37.26
-48.21
-67.93
-85.34
-105.27
-115.35
-123.36
-127.10
-130.59
-136.60
-142.01
-146.87
-151.34
-153.78
-155.92
-160.53
-164.58
-176.37
171.24
158.75
146.36
135.56
125.06
117.84
111.88
106.49
101.39
MAG
13.456
12.847
12.100
11.246
10.822
8.897
6.919
5.983
5.258
4.958
4.689
4.235
3.870
3.553
3.294
3.179
3.075
2.886
2.717
2.389
2.143
1.951
1.798
1.671
1.567
1.473
1.387
1.310
1.239
S12
ANG
168.86
157.43
147.50
139.00
127.56
115.63
103.15
96.67
91.25
88.73
86.43
82.15
78.13
74.49
71.02
69.33
67.68
64.51
61.50
54.30
47.62
41.26
35.18
29.34
23.87
18.43
13.28
8.53
4.23
MAG
0.014
0.026
0.037
0.045
0.054
0.064
0.075
0.082
0.088
0.092
0.095
0.103
0.110
0.119
0.128
0.133
0.138
0.148
0.159
0.190
0.224
0.261
0.302
0.345
0.390
0.435
0.479
0.521
0.560
S22
ANG
75.71
76.38
69.94
66.46
58.84
55.63
55.15
55.97
57.40
58.17
58.97
60.93
62.36
64.05
65.48
66.11
66.51
67.63
68.38
69.51
69.45
68.42
66.31
63.55
60.16
56.05
51.57
46.77
42.01
MAG
0.967
0.923
0.870
0.812
0.696
0.584
0.493
0.446
0.417
0.406
0.396
0.386
0.377
0.374
0.372
0.373
0.374
0.377
0.383
0.400
0.420
0.440
0.459
0.477
0.492
0.503
0.512
0.520
0.523
ANG
-9.33
-17.46
-24.63
-30.66
-40.80
-48.45
-54.53
-57.88
-60.15
-61.38
-62.38
-64.26
-65.92
-67.94
-69.91
-70.77
-71.57
-73.52
-75.40
-79.74
-84.41
-90.05
-96.90
-104.52
-112.99
-122.86
-132.99
-143.02
-153.03
K
MAG1
0.205
0.177
0.250
0.301
0.414
0.555
0.708
0.800
0.876
0.906
0.934
0.973
1.006
1.029
1.038
1.042
1.040
1.043
1.035
1.004
0.965
0.924
0.886
0.852
0.829
0.809
0.798
0.793
0.799
(dB)
29.83
26.94
25.19
23.96
23.00
21.42
19.64
18.65
17.76
17.32
16.92
16.15
14.96
13.72
12.90
12.53
12.25
11.64
11.17
10.64
9.82
8.74
7.75
6.85
6.04
5.30
4.62
4.00
3.45
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE894M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
S21
j100
j25
+45˚
+135˚
S11
j10
S12
10
0
25
2
S2
50
100
0
2
+180˚
4
6
8
1
0˚
-j10
-135˚
-j100
-j25
-45˚
-j50
-90˚
0.100 to 8.000 GHz by 0.100
0.100 to 8.000 GHz by 0.100
NE894M03
VC = 1 V, IC = 20 mA
FREQUENCY
S11
S21
GHz
MAG
ANG
MAG
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.200
1.400
1.500
1.600
1.800
2.000
2.200
2.400
2.500
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
0.471
0.411
0.354
0.310
0.280
0.253
0.238
0.232
0.224
0.221
0.218
0.213
0.208
0.199
0.193
0.191
0.187
0.181
0.174
0.162
0.154
0.155
0.165
0.184
0.209
0.244
0.280
0.318
0.354
-25.95
-47.55
-65.00
-78.61
-111.18
-128.95
-145.67
-152.85
-158.68
-161.38
-163.90
-167.93
-171.63
-175.63
-178.78
179.04
177.38
173.28
169.63
158.76
146.71
135.13
124.55
117.01
109.56
106.64
104.53
102.21
99.38
30.346
26.025
21.817
18.373
15.790
11.932
8.694
7.352
6.372
5.977
5.625
5.047
4.583
4.194
3.877
3.738
3.609
3.378
3.178
2.783
2.490
2.265
2.089
1.949
1.834
1.734
1.647
1.570
1.498
S12
S22
ANG
MAG
ANG
MAG
ANG
158.67
141.49
129.12
120.17
111.09
102.02
93.09
88.51
84.58
82.73
81.05
77.78
74.70
71.82
69.04
67.69
66.38
63.76
61.26
55.23
49.51
44.01
38.67
33.51
28.53
23.50
18.60
13.90
9.48
0.012
0.020
0.028
0.034
0.041
0.051
0.069
0.081
0.093
0.099
0.105
0.117
0.129
0.142
0.154
0.160
0.167
0.180
0.192
0.225
0.258
0.291
0.324
0.358
0.393
0.428
0.462
0.495
0.526
79.29
75.44
71.06
70.81
67.98
69.48
71.17
71.83
72.24
72.22
72.26
72.11
71.97
71.32
70.68
70.44
70.18
69.53
68.63
66.58
64.25
61.57
58.73
55.74
52.51
49.06
45.43
41.62
37.89
0.872
0.757
0.649
0.563
0.428
0.334
0.274
0.246
0.230
0.225
0.222
0.219
0.218
0.221
0.224
0.226
0.230
0.235
0.244
0.267
0.289
0.311
0.330
0.346
0.359
0.369
0.376
0.384
0.389
-17.25
-30.53
-39.26
-45.08
-58.02
-63.82
-65.91
-68.43
-69.29
-70.06
-70.43
-71.10
-71.66
-73.00
-74.14
-74.60
-75.18
-76.50
-77.71
-81.03
-84.82
-89.72
-96.17
-103.31
-111.43
-121.23
-131.20
-141.17
-150.59
K
MAG1
0.360
0.470
0.591
0.684
0.790
0.900
0.965
0.993
1.010
1.015
1.020
1.023
1.026
1.028
1.028
1.027
1.024
1.021
1.018
1.005
0.990
0.975
0.959
0.942
0.929
0.914
0.902
0.891
0.885
34.13
31.13
28.95
27.33
25.90
23.66
21.00
19.59
17.76
17.06
16.42
15.41
14.50
13.68
12.99
12.68
12.40
11.85
11.36
10.51
9.85
8.92
8.09
7.35
6.69
6.08
5.52
5.01
4.54
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE894M03
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
S21
j100
j25
+45˚
+135˚
S11
j10
S12
0
10
25
50
100
2
+180˚
0
4
6
8
1
0˚
2
S2
-j10
-135˚
-45˚
-j100
-j25
-j50
-90˚
0.100 to 8.000 GHz by 0.100
0.100 to 8.000 GHz by 0.100
NE894M03
VC = 2 V, IC = 10 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.700
1.000
1.200
1.400
1.500
1.600
1.800
2.000
2.200
2.400
2.500
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
S21
S11
MAG
0.676
0.625
0.564
0.503
0.411
0.340
0.282
0.260
0.240
0.232
0.225
0.215
0.205
0.193
0.185
0.181
0.177
0.169
0.160
0.144
0.130
0.126
0.133
0.151
0.176
0.216
0.258
0.302
0.344
ANG
-15.93
-31.00
-43.98
-55.03
-77.55
-94.08
-112.43
-121.15
-128.06
-131.34
-134.30
-139.26
-143.73
-147.60
-151.09
-153.43
-155.06
-159.20
-162.54
-173.30
173.99
160.13
146.05
134.79
123.99
118.84
115.06
111.27
107.28
MAG
21.954
20.217
18.188
16.169
14.778
11.612
8.695
7.418
6.463
6.073
5.726
5.147
4.682
4.287
3.965
3.824
3.693
3.458
3.251
2.847
2.547
2.316
2.136
1.992
1.875
1.774
1.685
1.603
1.528
S12
ANG
164.82
151.06
139.76
130.65
120.09
109.37
98.72
93.31
88.76
86.65
84.73
81.08
77.65
74.50
71.49
70.02
68.61
65.81
63.14
56.77
50.75
44.99
39.39
33.98
28.75
23.41
18.19
13.14
8.36
MAG
0.012
0.020
0.028
0.035
0.041
0.050
0.064
0.073
0.081
0.087
0.091
0.101
0.111
0.121
0.132
0.137
0.143
0.154
0.166
0.195
0.227
0.261
0.297
0.334
0.373
0.414
0.456
0.497
0.535
S22
ANG
76.68
74.50
71.35
67.71
64.03
63.98
66.11
67.44
68.71
69.06
69.76
70.63
71.10
71.60
71.91
71.98
72.07
72.04
71.89
71.18
69.98
68.18
65.94
63.32
60.42
56.87
52.96
48.76
44.54
MAG
0.940
0.872
0.794
0.721
0.589
0.481
0.407
0.370
0.349
0.342
0.336
0.331
0.327
0.329
0.331
0.332
0.335
0.340
0.348
0.369
0.391
0.414
0.434
0.451
0.465
0.476
0.484
0.491
0.494
ANG
-11.43
-21.02
-28.45
-34.01
-43.87
-49.19
-51.87
-53.78
-54.74
-55.53
-55.99
-57.14
-58.09
-59.84
-61.37
-62.06
-62.79
-64.51
-66.18
-70.18
-74.60
-79.87
-86.36
-93.48
-101.40
-110.72
-120.36
-130.15
-139.81
K
MAG1
0.263
0.312
0.397
0.492
0.609
0.756
0.873
0.929
0.970
0.982
0.995
1.006
1.017
1.022
1.023
1.022
1.020
1.015
1.008
0.986
0.961
0.934
0.906
0.880
0.860
0.838
0.820
0.808
0.803
(dB)
32.68
29.96
28.13
26.66
25.55
23.64
21.36
20.10
18.99
18.46
17.98
16.59
15.46
14.56
13.86
13.55
13.26
12.76
12.36
11.63
10.49
9.49
8.57
7.76
7.01
6.32
5.68
5.09
4.55
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE894M03
NONLINEAR MODEL
SCHEMATIC
CCBPKG
0.35 pF
CCB
0.12 pF
LBPKG
LB
0.55 nH
0.01 nH
Base
LCPKG
0.60 nH
Collector
CCE
Q1
0.18 pF
LE
0.01 nH
CCEPKG
0.07 pF
LEPKG
0.95 nH
CBEPKG
0.005 pF
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Parameters
Q1
IS
100e-18
MJC
0.76
BF
121.3
XCJC
0.5
NF
1.00
CJS
0
VAF
25
VJS
0.75
IKF
293e-3
MJS
0
ISE
50e-15
FC
0.5
NE
2.111
TF
6.5e-12
BR
30
XTF
0.1
NR
1.0
VTF
10
VAR
2.105
ITF
0.5
IKR
457e-3
PTF
20
ISC
1.155e-15
TR
0
NC
1.288
EG
1.11
RE
1.5
XTB
0
RB
3.0
XTI
3
RBM
1.0
KF*
0
IRB
759e-6
AF*
1
RC
4.0
CJE
0.6e-12
VJE
1.049
MJE
0.226
CJC
83e-15
VJC
0.89
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CBEPKG
CCEPKG
LBPKG
LCPKG
LEPKG
NE894M03
0.12 pF
0.18 pF
0.01 nH
0.01 nH
0.35 pF
0.005 pF
0.07 pF
0.55 nH
0.60 nH
0.95 nH
AF and KF are 1/f noise parameters and are bias dependent.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
IC = 5 mA
IC = 10 mA
IC = 15 mA
AF
1.352
2.17
2.19
KF
71.23e-15
231.3e-12
268.9e-12
For a better understanding on AF and KF parameters,
please refer to AN1026.
MODEL TEST CONDITIONS
Frequency: 0.1 to 6 GHz
Bias:
VCE = 1.5 V, IC = 1 mA to 9 mA
Date:
09/2003
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/02/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
3-97