CEM2030 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Units V Gate-Source Voltage VGS ±12 ±12 V ID 6 -4.3 A IDM 35 -17 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2000.October http://www.cetsemi.com 5-9 CEM2030 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 20V, VGS = 0V 1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forwand Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 0.5 VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6.0A 7 1 V 24 30 mΩ 29 40 mΩ 18 S 1660 pF 470 pF 110 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 8V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 23 32 ns 20 28 ns 45 63 ns Turn-On Fall Time tf 16 22 ns Total Gate Charge Qg 23 30 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10V, ID = 6A, VGS = 4.5V 4.5 nC 8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 10 1.7 A 1.2 V CEM2030 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -16V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA 50 90 mΩ 80 120 mΩ Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forwand Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -0.6 VGS = -4.5V, ID = -2.2A VGS = -2.5V, ID = -1.8A VDS = -16V, ID = -2.2A 4 V 6 S 1430 pF 800 pF 325 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 20 VDD = -10V, ID = -2.2A, VGS = -4.5V, RGEN = 6Ω 28 ns 21 30 ns 76 106 ns Turn-On Fall Time tf 56 78 ns Total Gate Charge Qg 19.4 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -6V, ID = -2.2A, VGS = -4.5V 3 nC 5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 11 -2.5 A -1.0 V 5 CEM2030 N-CHANNEL 25 25 25 C 20 ID, Drain Current (A) ID, Drain Current (A) VGS=4.5,3.5,2.5V 15 10 VGS=1.5V 5 20 15 10 5 TJ=125 C 0 0 0 1 2 3 4 5 6 0.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1500 1000 Coss 500 Crss 0 2 4 6 8 10 12 2.5 3.0 2.2 1.9 ID=6A VGS=4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 2.0 Figure 2. Transfer Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 Figure 1. Output Characteristics 2000 1.2 1.0 VGS, Gate-to-Source Voltage (V) 2500 0 0.5 VDS, Drain-to-Source Voltage (V) 3000 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 12 CEM2030 P-CHANNEL 25 20 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=5,4.5,4,3.5V 20 -VGS=3.0V 15 10 5 -VGS=2.0V 16 5 12 8 4 -55 C TJ=125 C 0 0 0 2 4 6 8 10 12 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1200 800 Coss 400 Crss 0 5 10 15 20 25 30 3.0 2.2 1.9 ID=-2.2A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 2.5 Figure 8. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2.0 Figure 7. Output Characteristics 1600 1.2 1.5 -VGS, Gate-to-Source Voltage (V) 2000 1.3 1.0 -VDS, Drain-to-Source Voltage (V) 2400 0 0.5 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 - 13 CEM2030 5 V =10V DS ID=6A RDS(ON)Limit 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 3 2 1 10 10 10 1 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse 0 0 6 12 18 24 10 -1 10 1 VDS, Drain-Source Voltage (V) Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 5 V =-6V DS ID=-2.2A RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 0 Qg, Total Gate Charge (nC) P-CHANNEL 4 3 2 1 0 0 10 6 12 18 24 10 10 10 1 10ms 100ms 1s DC 0 -1 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 5 - 14 CEM2030 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 5 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 0.02 Single Pulse 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 5 - 15 10 1 10 2