CEM2030

CEM2030
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
5
20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V.
RDS(ON) = 40mΩ @VGS = 2.5V.
-20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V.
RDS(ON) = 120mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1
D1
D2
D2
8
7
6
5
Lead free product is acquired.
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
S1
G1
S2
G2
TA = 25 C unless otherwise noted
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
-20
Units
V
Gate-Source Voltage
VGS
±12
±12
V
ID
6
-4.3
A
IDM
35
-17
A
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
2000.October
http://www.cetsemi.com
5-9
CEM2030
N-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 20V, VGS = 0V
1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forwand Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = 250µA
0.5
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
VDS = 10V, ID = 6.0A
7
1
V
24
30
mΩ
29
40
mΩ
18
S
1660
pF
470
pF
110
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
23
32
ns
20
28
ns
45
63
ns
Turn-On Fall Time
tf
16
22
ns
Total Gate Charge
Qg
23
30
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, ID = 6A,
VGS = 4.5V
4.5
nC
8
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 10
1.7
A
1.2
V
CEM2030
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -16V, VGS = 0V
-1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
50
90
mΩ
80
120
mΩ
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forwand Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = -250µA
-0.6
VGS = -4.5V, ID = -2.2A
VGS = -2.5V, ID = -1.8A
VDS = -16V, ID = -2.2A
4
V
6
S
1430
pF
800
pF
325
pF
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
20
VDD = -10V, ID = -2.2A,
VGS = -4.5V, RGEN = 6Ω
28
ns
21
30
ns
76
106
ns
Turn-On Fall Time
tf
56
78
ns
Total Gate Charge
Qg
19.4
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -6V, ID = -2.2A,
VGS = -4.5V
3
nC
5
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
5 - 11
-2.5
A
-1.0
V
5
CEM2030
N-CHANNEL
25
25
25 C
20
ID, Drain Current (A)
ID, Drain Current (A)
VGS=4.5,3.5,2.5V
15
10
VGS=1.5V
5
20
15
10
5
TJ=125 C
0
0
0
1
2
3
4
5
6
0.0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
1500
1000
Coss
500
Crss
0
2
4
6
8
10
12
2.5
3.0
2.2
1.9
ID=6A
VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
2.0
Figure 2. Transfer Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.5
Figure 1. Output Characteristics
2000
1.2
1.0
VGS, Gate-to-Source Voltage (V)
2500
0
0.5
VDS, Drain-to-Source Voltage (V)
3000
1.3
-55 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5 - 12
CEM2030
P-CHANNEL
25
20
25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=5,4.5,4,3.5V
20
-VGS=3.0V
15
10
5
-VGS=2.0V
16
5
12
8
4
-55 C
TJ=125 C
0
0
0
2
4
6
8
10
12
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
1200
800
Coss
400
Crss
0
5
10
15
20
25
30
3.0
2.2
1.9
ID=-2.2A
VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 9. Capacitance
Figure 10. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
2.5
Figure 8. Transfer Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2.0
Figure 7. Output Characteristics
1600
1.2
1.5
-VGS, Gate-to-Source Voltage (V)
2000
1.3
1.0
-VDS, Drain-to-Source Voltage (V)
2400
0
0.5
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 11. Gate Threshold Variation
with Temperature
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5 - 13
CEM2030
5 V =10V
DS
ID=6A
RDS(ON)Limit
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
N-CHANNEL
3
2
1
10
10
10
1
10ms
100ms
1s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
0
0
6
12
18
24
10
-1
10
1
VDS, Drain-Source Voltage (V)
Figure 13. Gate Charge
Figure 14. Maximum Safe
Operating Area
5 V =-6V
DS
ID=-2.2A
RDS(ON)Limit
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
0
Qg, Total Gate Charge (nC)
P-CHANNEL
4
3
2
1
0
0
10
6
12
18
24
10
10
10
1
10ms
100ms
1s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
10
-1
10
0
10
1
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
5 - 14
CEM2030
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
5
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 18. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 17. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
t2
1. R JA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = P* R JA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 19. Normalized Thermal Transient Impedance Curve
5 - 15
10
1
10
2