GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 FEATURES DS4325-6.0 October 2001 KEY PARAMETERS ■ n - Channel VCES ■ High Switching Speed VCE(sat) (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■ IC75 (max) 250A IC(PK) (max) 700A APPLICATIONS ■ PWM Motor Control ■ UPS The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. 600V 2.2V 6(G2) 11(C2) 7(E2) 3(C1) 2(E2) 1(E1C2) 5(E1) 9(C1) 4(G1) The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. Fig. 1 Half bridge circuit diagram These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. 11 10 ORDERING INFORMATION Order as: 1 2 3 8 9 6 7 5 4 GP250MHB06S Note: When ordering, use complete part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP250MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC Max. Units 600 V ±20 V DC, Tcase = 25˚C 350 A DC, Tcase = 75˚C 250 A 1ms, Tcase = 25˚C 700 A 1ms, Tcase = 75˚C 500 A Parameter Collector current IC(PK) Test Conditions VGE = 0V - Pmax Maximum power dissipation (Transistor) 1250 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V THERMAL AND MECHANICAL RATINGS Symbol Min. Max. - 100 o - 250 o - 15 o Transistor - 150 o Diode - 125 o - 40 125 o Mounting - M6 - 5 Nm Electrical connections - M6 - 5 Nm Parameter Conditions Rth(j-c) Thermal resistance - transistor DC junction to case per arm Rth(j-c) Thermal resistance - diode DC junction to case Rth(c-h) Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque - - Units C/kW C/kW C/kW C C C Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S ELECTRICAL CHARACTERISTICS Tj = 25˚C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 15 mA VGE = 0V, VCE = VCES, Tj = 125˚C - - 50 mA Gate leakage current VGE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4 - 7.5 V 2.2 2.7 V Collector-emitter saturation voltage VGE = 15V, IC = 250A - VCE(SAT) VGE = 15V, IC = 250A, Tj = 125˚C - 2.3 2.8 V ICES IGES Parameter Collector cut-off current Conditions IF Diode forward current DC - - 250 A IFM Diode maximum forward current tp = 1ms - - 500 A VF Diode forward voltage IF = 250A, - 1.1 1.9 V IF = 250A, Tj = 125˚C - 1.05 1.8 V VCE = 25V, VGE = 0V, f = 1MHz - 27000 - pF Cies Input capacitance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP250MHB06S INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25˚C unless stated otherwise Symbol td(off) tf EOFF Parameter Conditions Min. Typ. Max. Units - 810 - ns IC = 250A - 310 - ns VGE = ±15V - 20 - mJ - 330 - ns - 130 - ns - 12 - mJ IF = 250A - 165 - ns VR = 50%VCES, dIF/dt = 1500A/µs - 15 - µC - 1050 - ns IC = 250A - 450 - ns VGE = ±15V - 30 - mJ - 380 - ns - 160 - ns - 18 - mJ IF = 250A - 230 - ns VR = 50%VCES, dIF/dt = 1500A/µs - 23 - µC Turn-off delay time Fall time Turn-off energy loss VCE = 50% VCES td(on) tr EON Turn-on delay time RG(ON) = RG(OFF) = 5Ω L ~ 100nH Rise time Turn-on energy loss trr Diode reverse recovery time Qrr Diode reverse recovery charge Tj = 125˚C unless stated otherwise. td(off) tf EOFF Turn-off delay time Fall time Turn-off energy loss VCE = 50% VCES td(on) tr EON Turn-on delay time L ~ 200nH Rise time Turn-on energy loss trr Diode reverse recovery time Qrr Diode reverse recovery charge 4/10 RG(ON) = RG(OFF) = 5Ω Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S TYPICAL CHARACTERISTICS Vge = 20/15V 500 Common emitter 450 Tcase = 25˚C Common emitter 450 Tcase = 125˚C Vge = 12V Collector current, Ic - (A) Collector current, Ic - (A) 350 300 250 200 Vge = 10V 150 350 300 250 200 Vge = 10V 150 100 100 50 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, Vce - (V) 0 0 5 Fig.3 Typical output characteristics 5 30.0 Tj = 25˚C 27.5 VGE = ±15V 25.0 VCE = 300V A Tj = 125˚C 27.5 VGE = ±15V 25.0 VCE = 300V A 22.5 B Turn-on energy, EON - (mJ) 22.5 Turn-on energy, EON - (mJ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-emitter voltage, Vce - (V) Fig.4 Typical output characteristics 30.0 20.0 20.0 B 17.5 C 17.5 15.0 15.0 12.5 12.5 C 10.0 10.0 7.5 5.0 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω 2.5 0 0 Vge = 12V 400 400 0 0 Vge = 20/15V 500 50 100 150 200 Collector current, IC - (A) 250 Fig.5 Typical turn-on energy vs collector current 300 7.5 5.0 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω 2.5 0 0 50 100 150 200 Collector current, IC - (A) 300 Fig.6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 250 5/10 GP250MHB06S 40 40 35 25 A B 20 C 15 10 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω 5 0 0 Diode turn-off energy, EOFF(diode) - (mJ) Turn-off energy, EOFF - (mJ) 30 50 200 100 150 Collector current, IC - (A) 250 Tj = 125˚C VGE = ±15V VCE = 300V A B C 30 25 20 15 10 A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω 5 0 0 300 50 100 150 200 Collector current, IC - (A) 250 Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current 5 5 Tj = 25˚C VGE = ±15V VCE = 300V Rg = 5Ω 4 3 Rg = 10Ω 2 Rg = 15Ω 1 0 0 50 100 150 200 Collector current, IC - (A) 250 300 Fig.9 Typical diode turn-off energy vs collector current 6/10 Diode turn-off energy, EOFF(diode) - (mJ) Turn-off energy, EOFF - (mJ) Tj = 25˚C VGE = ±15V 35 V = 300V CE Tj = 125˚C VGE = ±15V VCE = 300V 300 Rg = 5Ω 4 3 Rg = 10Ω 2 Rg = 15Ω 1 0 0 50 100 150 200 Collector current, IC - (A) 250 300 Fig.10 Typical diode turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S 250 1400 td(off) Tj = 125˚C VGE = ±15V VCE = 300V Rg = 5Ω 1200 225 200 175 Foward current, IF - (A) Switching times, - (ns) 1000 150 800 tf Tj = 125˚C 125 600 100 td(on) 400 Tj = 25˚C 75 50 200 25 tr 0 0 0 50 100 150 200 Collector current, IC - (A) 250 300 0 1.00 0.50 0.75 Foward voltage, VF - (V) 10000 600 500 Collector current, IC - (A) 1000 400 300 200 IC max. (single pulse) 50µs 100µs 100 IC tp = 1ms m ax .D C (c on tin uo us ) 10 100 0 0 1.25 Fig.12 Diode typical forward characteristics Fig.11 Typical switching characteristics Collector current, IC - (A) 0.25 Tj = 125˚C Vge = ±15V Rg = 5Ω 600 200 400 Collector-emitter voltage, Vce - (V) Fig.13 Reverse bias safe operating area 800 1 1 10 100 Collector-emitter voltage, Vce - (V) Fig.14 Forward bias safe operating area (DC and single pulse) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 7/10 GP250MHB06S Transient thermal impedance, Zth (j-c) - (°C/kW ) 1000 Diode Transistor 100 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP250MHB06S PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 ± 0.5 28 ± 0.5 6 62 ± 0.8 48 ± 0.3 11 1 10 2 3 7 4x Fast on tabs 8 5 9 4 93 ± 0.3 3x M6 23 38max 8 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP250MHB06S POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4325-6 Issue No. 6.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com