GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. KEY PARAMETERS 1200V (typ) 2.7V (max) 1600A (max) 3200A VCES VCE(sat) IC IC(PK) 5 6 7 3 1 4 2 8 9 12 11 10 Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters. Outline type code: F FEATURES (See package details for further information) ■ n - Channel ■ Enhancement Mode ■ High Input Impedance ■ Optimised For High Power High Frequency Operation ■ Isolated Base 8(E1) ■ Full 1200V Capability 9(G1) ■ 1600A Per Module Fig. 1 Electrical connections - (not to scale) 3/4(E) 1/2(C) 7(C1) Fig.2 Single switch circuit diagram APPLICATIONS ORDERING INFORMATION ■ High Power Switching Order As: GP1600FSS12 ■ Motor Control Note: When ordering, please use the whole part number. ■ Inverters ■ Traction Systems Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 GP1600FSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Tcase = 25˚C unless stated otherwise. Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Collector current IC(PK) Test Conditions Max. Units 1200 V ±20 V DC, Tcase = 25˚C 2100 A DC, Tcase = 75˚C 1600 A 1ms, Tcase = 75˚C 3200 A VGE = 0V - Pmax Maximum power dissipation Tcase = 25˚C (Transistor) 11400 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V THERMAL AND MECHANICAL RATINGS Symbol Parameter Conditions 11 o - 20 o Mounting torque 5Nm (with mounting grease) - 8 o Transistor - 150 o Diode - 125 o –40 125 o Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm Thermal resistance - transistor DC junction to case Rth(j-c) Thermal resistance - diode DC junction to case Rth(c-h) Thermal resistance - Case to heatsink (per module) Junction temperature Tstg - Storage temperature range Screw torque Max. Units - Rth(j-c) Tj Min. - - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11 C/kW C/kW C/kW C C C GP1600FSS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 75 mA Gate leakage current VGE = ±20V, VCE = 0V - - 8 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4 - 7.5 V 2.7 3.5 V Collector-emitter saturation voltage VGE = 15V, IC =1600A - VCE(SAT) VGE = 15V, IC = 1600A, Tcase = 125˚C - 3.2 4.0 V ICES Parameter Collector cut-off current IGES Conditions IF Diode forward current DC - - 1600 A IFM Diode maximum forward current tp = 1ms - - 3200 A VF Diode forward voltage IF =1600A - 2.2 2.4 V IF =1600A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 180 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11 GP1600FSS12 INDUCTIVE SWITCHING CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25˚C unless stated otherwise Symbol td(off) tf Parameter Conditions Turn-off delay time Fall time EOFF Turn-off energy loss IC = 1600A VGE = ±15V td(on) Turn-on delay time VCE = 600 RG(ON) = RG(OFF) = 3.3Ω tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge L ~ 100nH IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs Min. Typ. Max. Units - 1650 1800 ns - 200 250 ns - 350 450 mJ - 1600 1750 ns - 450 550 ns - 160 200 mJ - 100 130 µC - 170 - µC - 1900 2100 ns - 250 300 ns - 400 500 mJ - 1750 2000 ns - 500 550 ns - 250 350 mJ - 250 350 µC - 225 - µC Tcase = 125˚C unless stated otherwise. td(off) tf Turn-off delay time Fall time EOFF Turn-off energy loss IC = 1600A VGE = ±15V td(on) Turn-on delay time VCE = 600 RG(ON) = RG(OFF) = 3.3Ω tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge L ~ 100nH IF = 1600A VR = 50%VCES, dIF/dt = 2000A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/11 GP1600FSS12 SWITCHING DEFINITIONS +15V Vge 10% 0V -15V t 4 + 5µs Eon = ∫V .I dt ce c IC 90% t1 td(on) = t2 - t1 10% tr = t3 - t2 Vce t1 t2 t4 t3 Fig.3 Definition of turn-on switching times +15V 90% 0V Vge -15V t 7 + 5µs Eoff = ∫V .I dt ce c t5 90% td(off) = t6 - t5 IC 10% tf = t7 - t6 Vce t5 t6 t7 Fig.4 Definition of turn-off switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11 GP1600FSS12 CURVES Vge = 20/15/12/10V Vge = 20/15/12/10V 3200 3200 Common emitter Tcase = 25˚C 2800 2800 2400 Collector current, IC - (A) Collector current, IC - (A) 2400 2000 1600 1200 2000 1600 1200 800 800 400 400 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig.5 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 450 Conditions: Tcase = 25˚C, 350 VCE = 600V, VGE = 15V Conditions: Tcase = 125˚C, VCE = 600V, VGE = 15V 400 A 250 200 B C 150 A 350 Turn-on energy, Eon - (mJ) 300 100 300 B 250 C 200 150 100 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 50 0 A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 50 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 Fig.7 Typical turn-on energy vs collector current 1600 0 200 400 600 800 1000 1200 1400 Collector current, IC - (A) Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11 5.0 Fig.6 Typical output characteristics 400 Turn-on energy, Eon - (mJ) Common emitter Tcase = 125˚C 1600 GP1600FSS12 600 600 Conditions: Tcase = 125˚C, VCE = 600V, 500 VGE = 15V A 400 B 400 B C 300 C 300 200 200 100 100 A : Rg = 3.3Ω B : Rg = 4.7Ω C : Rg = 7Ω A : Rg = 7Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 0 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 0 1600 200 400 600 800 1000 1200 1400 1600 Collector current, IC - (A) Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current 120 2500 Conditions: VCE = 600V, VGE = 15V, 100 Rg = 3.3Ω 2000 td(off) Tcase = 125˚C 80 Switching times - (ns) Diode turn-off energy, Eoff(Diode) - (mJ) A Turn-off energy, Eoff - (mJ) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 25˚C, VCE = 600V, 500 VGE = 15V 60 Tcase = 25˚C 40 td(on) 1500 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω 1000 500 tf 20 tr 0 0 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 Fig.11 Typical diode turn-off energy vs collector current 0 200 400 600 800 1000 1200 Collector current, IC - (A) 1400 1600 Fig.12 Typical switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11 GP1600FSS12 3200 2800 Tj = 25˚C Collector current, IC - (A) Forward current, IF - (A) 2400 Tj = 125˚C 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 Conditions: VGE = ±15V Rg = 3.3Ω Tcase = 125˚C 0 3.5 Fig.13 Diode typical forward characteristics 400 600 800 1000 Collector-emitter voltage, VCE - (V) 100 IC 1000 m ax Transient thermal impedance, Zth(j-c) - (˚C/kW) IC max. (single pulse) 50µs .D C 100µs (c on tin uo us ) 100 tp = 1ms 10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.15 Forward bias safe operating area 10000 Diode 10 Transistor 1 0.1 0.001 0.01 0.1 Pulse width, tp - (s) 1 Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11 1200 Fig.14 Reverse bias safe operating area 10000 Collector current, IC - (A) 200 10 GP1600FSS12 2500 4000 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 3000 2000 Collector current, IC - (A) Inverter phase current, IC(PK) - (A) 3500 2500 1500 2000 1000 1500 1000 500 Conditions: 500 Tj = 125°C, Tc = 75°C, Rg = 3.3Ω, VCC = 600V 0 0 1 10 fmax - (kHz) Fig.17 3-Phase inverter operating frequency 50 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.18 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11 GP1600FSS12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 15 15 5 1 4 2 57 3 65 6 8 16 2.5 18.5 18 7 9 43.3 57 65 12 11 10 14.5 11 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Nominal weight: 1600g Module outline type code: F ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4507 AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/11 GP1600FSS12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5173-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11