e PTB 20009 2.5 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 2.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 6 5 4 VCC = 24 V ICQ = 50 mA f = 960 MHz 200 09 LOT 3 COD E 2 1 0 0.00 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) Package 20206 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.7 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 13.5 Watts 0.077 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 13.0 °C/W 1 9/28/98 e PTB 20009 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 250 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz) Gpe 9 10 12 dB Collector Efficiency (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz) ηC 50 — — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz, —all phase angles at frequency of test) Typical Performance Gain & Efficiency vs. Frequency Gain (dB) 12 68 Efficiency (%) 11 10 9 8 920 80 56 44 VCC = 24 V Gain (dB) ICQ = 50 mA Pout = 2.5 W 930 32 940 950 960 Efficiency (%) 13 (as measured in a broadband circuit) 20 970 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98