e PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8–2.0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 Output Power (Watts) VCC = 26 V 0.8 ICQ = 140 mA f = 2.0 GHz 20 14 6 0.6 LO TC OD E 0.4 0.2 0.0 0.00 0.02 0.04 0.06 0.08 0.10 Package 20208 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.5 Adc Total Device Dissipation at Tflange = 25°C PD 5.4 Watts 0.031 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 32.3 °C/W 1 9/28/98 e PTB 20146 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 40 — — Symbol Min Typ Max Units Gpe 8 10 — dB P-1dB 0.4 0.6 — Watts Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA, f = 2.0 GHz) Output Power at 1 dB Compressed (VCC = 26 Vdc, ICQ = 140 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA, f = 2.0 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 0.4 W, ICQ = 140 mA) Z Source Frequency Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Z Load Z Source Z Load GHz R jX R jX 1.800 18.8 3.0 5.8 22.0 1.900 18.1 5.3 8.6 22.4 2.000 18.1 9.3 5.0 21.6 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 5/19/98 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20146 Uen Rev. D 09-28-98