e PTB 20206 1.0 Watt, 470–860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. Class A Characteristics 1.0 Watt, 470–860 MHz -44 dBc Max Two-tone IMD at 1 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 3.0 2.5 2.0 2020 6 LOT 1.5 1.0 VCE = 20 V 0.5 ICQ = 360 mA f = 860 MHz COD E 0.0 0.0 0.1 0.2 0.3 Package 20206 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.7 Adc Total Device Dissipation at Tflange = 25°C PD 13.5 Watts 0.077 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 13.0 °C/W 1 9/28/98 e PTB 20206 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 5 mA, IB = 0 A V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 55 70 — Volts Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 40 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 — Output Capacitance Vcb = 20 V, IE = 0 A, f = 1 MHz Cobo — 4.5 — pF Symbol Min Typ Max Units Gpe 11 11.5 — dB IM2 — -46 -44 dBc Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Gain (VCE = 20 Vdc, Pout = 1 W, ICQ = 360 mA, f = 860 MHz) Two-tone Intermodulation Distortion (VCE = 20 Vdc, Pout = 1 W(PEP), ICQ = 360 mA, f1 = 860 MHz, f2 = 860.1 MHz), Load Mismatch Tolerance (VCE = 20 Vdc, Pout = 2 W, ICQ = 360 mA, f = 860 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) Z0 = 50 Ω (VCE = 20 Vdc, Pout = 1 W, ICQ = 360 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 470 7.2 -6.4 13.7 -6.9 704 6.9 -4.1 12.8 2.3 782 5.8 -4.1 14.4 5.0 860 5.8 -3.6 17.2 7.0 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB Uen Rev. B 09-28-98