TSM2N7000 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω General Description The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features Ordering Information High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Part No. Packing Package TSM2N7000CT A3 Ammo pack TO-92 TSM2N7000CT B0 Bulk pack Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage VDGR 60 V Gate-Source Voltage --- Continuous VGS ± 20 V VGSM ± 40 ID 200 mA IDM 500 mA PD 350 mW 2.8 mW/ oC --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C o Ta > 25 C Operating Junction Temperature +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit TL 10 TJ Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance TSM2N7000 Rθja 1-3 357 2003/12 rev. A Unit S o C/W Electrical Characteristics Tj = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA BVDSS 60 -- -- V Drain-Source On-State Resistance * VGS = 10V, ID = 500mA RDS(ON) -- -- 5.0 Ω VGS = 5V, ID = 50mA RDS(ON) -- 7.5 -- Drain-Source On-Voltage * VGS = 0V, ID = 10uA VDS(ON) -- -- 2.5 V Gate Threshold Voltage * VDS = VGS, ID = 1.0mA VGS(TH) 0.8 -- 3.0 V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage - Forward VGS = 15V, VDS = 0V IGSS -- -- - 10 nA On-State Drain Current VDS ID(ON) 60 -- -- mA tr -- 10 -- tf -- 10 -- 5V, VGS = 10V Dynamic Turn-On Rise Time * Turn-Off Fall Time * VDD = 15V, RL = 30Ω, ID = 500mA, VGEN = 10V, RG = 25Ω nS Input Capacitance VDS = 25V, VGS = 0V, Ciss -- 60 -- Output Capacitance f = 1.0MHz Coss -- 25 -- Crss -- 5 -- IS -- -- 500 mA VSD -- 1.3 1.5 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 200mA, VGS = 0V * Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2N7000 2-3 2003/12 rev. A TO-92 Mechanical Drawing A TO-92 DIMENSION DIM B E C H F MILLIMETERS MIN MAX 4.70 INCHES MIN MAX A 4.30 B C 4.30 4.70 14.30(typ) 0.169 0.169 0.185 0.563(typ) D 0.43 0.49 0.017 0.019 E F 2.19 3.30 2.81 3.70 0.086 0.130 0.111 0.146 G 2.42 2.66 0.095 0.105 H 0.37 0.43 0.015 0.017 G D TSM2N7000 3-3 2003/12 rev. A 0.185