2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA 500 mA 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 40 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 30 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 10 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1 µA VCB = 30 V, IE = 0 µA VCE = 24 V, RBE = ∞ I CEO — — 10 1 2000 — 100000 VCE = 5 V, IC = 10 mA*2 hFE2* 1 3000 — — VCE = 5 V, IC = 100 mA*2 hFE3* 1 3000 — — VCE = 5 V, IC = 400 mA*2 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 100 mA, IB = 0.1 mA*2 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 100 mA, IB = 0.1 mA*2 DC current transfer ratio hFE1* Notes: 1. The 2SD1471 is grouped by h FE as follows. 2. Pulse test Mark DT hFE1 2000 to 100000 5000 to 100000 hFE2 3000 min 10000 min hFE3 3000 min 10000 min 2 ET 2SD1471 Area of Safe Operation Maximum Collector Dissipation Curve 1.0 s 0m Collector Current IC (A) =1 0.1 0.03 Ta = 25°C 1 Shot Pulse 0.01 0.003 0.001 0 3 100 150 50 Ambient Temperature Ta (°C) PC = 0.3 0.2 0.1 0 1W 0.4 Ta = 25°C 20 18 16 14 12 10 8 6 4 2µ IB = 0 A 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE (×103) 0.5 100 300 10 30 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics Collector Current IC (A) s 0.4 0.3 1m 0.8 1 µs iC(peak) PW Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 300 VCE = 3 V Pulse 100 30 Ta = 75°C 25 –25 10 3 10 30 100 300 Collector Current IC (mA) 1,000 3 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 2SD1471 Saturation Voltage vs. Collector Current 10 3 VBE(sat) VCE(sat) 1.0 0.3 Ta = 25°C IC /IB = 1,000 0.1 10 30 100 300 Collector Current IC (mA) 1,000 Transient Thermal Resistance Thermal Resistance θj-a (°C/W) 300 100 30 10 3 0.3 1m 4 Ta = 25°C On The Alumina Ceramic Board (12.5×30×0.7 mm) 1.0 10 m 100 m 1 Time t (s) 10 100 1,000 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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