2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCEO 1500 V Emitter to base voltage VEBO 6 V Collector current IC 20 mA Collector peak current I C (peak) 40 mA Collector power dissipation PC 2 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector cutoff current I CES — — 10 µA VCE = 1500 V, RBE = 0 Collector cutoff current I CEO — — 100 µA VCE = 1500 V, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 6 V, IC = 0 DC current transfer ratio hFE 10 — — Collector to emitter saturation voltage VCE (sat) — — 5.0 2 VCE = 5 V, IC = 1 mA V I C = 10 mA, IB = 2 mA 2SC5022 Collector Power Dissipation vs. Ambient Temperature Maximum Safe Operation Area 100 I C (mA) Collector Current 3 2 1 0 50 100 150 Ambient Temperature Ta (°C) 50 ic(peak) 20 I C max 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) 200 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 1.8 mA 1.6 mA 0 Collector Current I C (mA) 2. m mA 1.4 .2 mA 1 0 mA 1. A 0.8 m mA 0.6 A 0.4 m 10 A 0.2 m Pulse Test Ta = 25 °C 0 IB = 0 5 10 Collector to Emitter Voltage V CE (V) 100 h FE A DC Current Transfer Ratio 20 1 shot pulse Ta = 25 °C ms =1 s Pw 10 m ion at er C) Op 25° DC c = (T Collector Power Dissipation Pc (W) 4 50 25 °C 75 °C 20 10 Ta = –25 °C 5 2 Pulse Test VCE = 5 V 1 0.1 0.2 0.5 1 2 5 10 Collector Current I C (mA) 20 3 2SC5022 Base to Emitter Saturation Voltage vs. Collector Current 1 1 Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current IC / I B= 5 Pulse Test 0.5 0.2 25 °C 75 °C 0.1 0.1 0.2 Ta = –25 °C 0.5 1 2 Collector Current 5 10 Ta = –25 °C 0.5 0.2 IC / I B= 5 Pulse Test 0.1 0.1 0.2 20 I C (mA) Gain Bandwidth Product f T (MHz) Collector Current I C (mA) 10 75 °C 25 °C Ta = –25 °C 0.3 0.1 0 V CE = 5 V Pulse Test 0.5 Base to Emitter Voltage V BE (V) 4 1 2 5 10 20 I C (mA) Gain Bandwidth Product vs. Collector Current 30 1 0.5 Collector Current Collector Current vs. Base to Emitter Voltage 3 25 °C 75 °C 1 10 5 2 VCE = 20 V Pulse Test 1 0.1 0.2 0.5 1 Collector Current 2 5 I C (mA) 10 Collector Output Capacitance Cob (pF) 2SC5022 Collector Output Capacitance vs. Collector to Base Voltage 50 20 10 5 2 IE =0, f = 1MHz 1 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V) 5 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 φ 3.2 ± 0.2 Unit: mm 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 4.45 ± 0.3 2.5 14.0 ± 1.0 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 2.5 ± 0.2 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g Cautions 1. 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