HITACHI 2SB955

2SB955(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2
1
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
ID
1.0 kΩ
(Typ)
200 Ω
(Typ)
3
2SB955(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–120
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–10
A
Collector peak current
I C(peak)
–15
A
10
A
50
W
C to E diode forward current
ID*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value at TC = 25°C
2. PW ≤ 1 ms 1 shot
Electrical Characteristics (Ta = 25°C)
Item
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
–120
—
—
V
I C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
I E = –200 mA, IC = 0
Collector cutoff current
I CBO
—
—
–100
µA
VCB = –120 V, IE = 0
I CEO
—
—
–10
µA
VCE = –100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
VCE(sat)1
—
—
–1.5
V
I C = –5 A, IB = –10 mA*1
voltage
VCE(sat)2
—
—
–3.0
V
I C = –10 A, IB = –0.1 A*1
Base to emitter saturation
VBE(sat)1
—
—
–2.0
V
I C = –5 A, IB = –10 mA*1
voltage
VBE(sat)2
—
—
–3.5
V
I C = –10 A, IB = –0.1 A*1
C to E diode forward voltage
VD
—
—
3.0
V
I D = 10 A*1
Turn on time
t on
—
0.8
—
µs
VCC = –30 V
Turn off time
t off
—
4.0
—
µs
I C = –5 A, IB1 = –IB2 = –10 mA
Note:
2
Symbol
1. Pulse test
VCE = –3 V, IC = –5 A*1
2SB955(K)
Maximum Collector Dissipation
Curve
Area of Safe Operation
–30
Collector current IC (A)
–0.3
Ta = 25°C
–0.1
50
100
Case temperature TC (°C)
–0.03
–3
150
–8
–6
2.0
30000
5
1.
1.0
0.9
0.8
0.7
P
C
=
50
W
0.6
0.5
–4
0.4 mA
–2
IB = 0
0
–6
–8
–10
–2
–4
Collector to emitter voltage VCE (V)
DC current transfer ratio hFE
Collector current IC (A)
TC = 25°C
–10
–30
–100
–300
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
–10
ot
)
sh
°C
ot
25
s1
=
sh
m
1
1
s
=
(T C
m
ion
at
er
Op
–1.0
10
10
–3
=
20
IC(max)
DC
30
PW
40
0
iC(peak)
–10
PW
Collector power dissipation PC (W)
50
VCE = –3 V
Pulse
10000
=
Ta
3000
C
75°
25
5
–2
1000
300
100
30
–0.3
–1.0
–3
–10
Collector current IC (A)
–30
3
Saturation Voltage vs. Collector Current
Switching Time vs. Collector Current
–10
–3
10
3
VBE(sat)
–1.0
500
VCE(sat)
–0.3
Switching time t (µs)
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
2SB955(K)
200
IC/IB = 100
–0.1
Ta = 25°C
Pulse
–0.03
–0.01
–0.3
–1.0
–3
–10
Collector current IC (A)
tstg
ton
1.0
tf
0.3
0.1
VCC = –30 V
IC = 500 IB1 = –500 IB2
Ta = 25°C
0.03
–30
0.01
–0.3
–1.0
–3
–10
Collector current IC (A)
Diode Current vs. Forward Voltage
10
Diode current ID (A)
8
6
4
2
0
4
TC = 25°C
1
2
3
4
Diode forward voltage VF (V)
5
–30
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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