2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features • High voltage large current operation. VCEO = 80 V, IC = 300 mA • High fT . fT = 1.4 GHz • Small output capacitance. Cob = 3 pF 2SC5225 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 3 V Collector current IC 300 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 2 2SC5225 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 100 — — V I C = 100 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 80 — — V I C = 1 mA, RBE = ∞ Collector to base cutoff current I CBO — — 1 µA VCB = 80 V, IE = 0 Emitter to base cutoff current I EBO — — 10 µA VEB = 3 V, IC = 0 DC current transfer ratio hFE 20 70 — Gain bandwidth product fT 1.2 1.4 — GHz VCE = 10 V, IC = 50 mA Emitter input capacitance Cib — 13 19 pF VEB = 0, IC = 0, f = 1 MHz Collector output capacitance Cob — 3 4 pF VCB = 10 V, IE = 0, f = 1 MHz DC Current Transfer Ratio vs. Collector Current 100 1000 DS Current Transfer Ratio hFE Collector Power Dissipation Pc (mW) Collector Power Dissipation Curve 800 600 400 200 0 50 100 150 Ambient Temperature Ta (°C) VCE = 5 V, IC = 50 mA Pulse test 200 VCE = 5V 50 20 10 1 2 5 10 20 50 100 200 500 Collector Current I C (mA) 3 2SC5225 500 500 200 200 100 50 Collector Current I C (mA) Collector to Emitter Saturation Voltage V CE(sat) (mV) Collector to Emitter Saturation Voltage vs. Collector Current I C / I B = 10 100 50 20 Collector Current vs. Base to Emitter Voltage VCE = 5V 20 10 5 2 1 0.5 0.2 10 0.1 1 2 5 10 20 0 50 100 200 500 Collector Current I C (mA) IE = 0 f = 1 MHz 5 2 2 5 10 20 Collector to Base Voltage V CB (V) 4 50 Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) 10 1 0.4 0.6 0.8 1.0 Emitter Input Capacitance vs. Emitter to Base Voltage Collector Output Capacitance vs. Collector to Base Voltage 1 0.5 0.2 Base to Emitter Voltage V BE (V) 20 IC = 0 f = 1 MHz 10 5 2 0.5 1 2 Emitter to Base Voltage VEB (V) 5 2SC5225 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (GHz) 1.5 V CE = 10 V VCE = 5 V 1.0 0.5 0 1 2 5 10 20 50 100 Collector Current I C (mA) 5 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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